| Giant spin-orbit-induced spin splitting in two-dimensional transition-metal dichalcogenide semiconductors ZY Zhu, YC Cheng, U Schwingenschlögl Physical Review B—Condensed Matter and Materials Physics 84 (15), 153402, 2011 | 1982 | 2011 |
| Intercorrelated In-Plane and Out-of-Plane Ferroelectricity in Ultrathin Two-Dimensional Layered Semiconductor In2Se3 C Cui, WJ Hu, X Yan, C Addiego, W Gao, Y Wang, Z Wang, L Li, Y Cheng, ... Nano letters 18 (2), 1253-1258, 2018 | 688 | 2018 |
| Prediction of two-dimensional diluted magnetic semiconductors: Doped monolayer MoS systems YC Cheng, ZY Zhu, WB Mi, ZB Guo, U Schwingenschlögl Physical Review B—Condensed Matter and Materials Physics 87 (10), 100401, 2013 | 654 | 2013 |
| Doping monolayer graphene with single atom substitutions H Wang, Q Wang, Y Cheng, K Li, Y Yao, Q Zhang, C Dong, P Wang, ... Nano letters 12 (1), 141-144, 2012 | 628 | 2012 |
| Borophene as an extremely high capacity electrode material for Li-ion and Na-ion batteries X Zhang, J Hu, Y Cheng, HY Yang, Y Yao, SA Yang Nanoscale 8, 15340, 2016 | 495 | 2016 |
| Enhanced valley splitting in monolayer WSe2 due to magnetic exchange field C Zhao, T Norden, P Zhang, P Zhao, Y Cheng, F Sun, JP Parry, P Taheri, ... Nature Nanotechnology, 2017 | 464 | 2017 |
| Spin-orbit–induced spin splittings in polar transition metal dichalcogenide monolayers YC Cheng, ZY Zhu, M Tahir, U Schwingenschlögl Europhysics Letters 102 (5), 57001, 2013 | 439 | 2013 |
| Valley polarization in magnetically doped single-layer transition-metal dichalcogenides YC Cheng, QY Zhang, U Schwingenschlögl Physical Review B 89 (15), 155429, 2014 | 366 | 2014 |
| Recent progress of Janus 2D transition metal chalcogenides: from theory to experiments R Li, Y Cheng, W Huang Small 14 (45), 1802091, 2018 | 353 | 2018 |
| Raman scattering study of zinc blende and wurtzite ZnS YC Cheng, CQ Jin, F Gao, XL Wu, W Zhong, SH Li, PK Chu Journal of Applied Physics 106 (12), 2009 | 342 | 2009 |
| Large Spin‐Valley Polarization in Monolayer MoTe2 on Top of EuO (111) Q Zhang, SA Yang, W Mi, Y Cheng, U Schwingenschlögl Advanced Materials, 2015 | 298 | 2015 |
| Efficient and High-Color-Purity Light-Emitting Diodes Based on In Situ Grown Films of CsPbX3 (X = Br, I) Nanoplates with Controlled Thicknesses J Si, Y Liu, Z He, H Du, K Du, D Chen, J Li, M Xu, H Tian, H He, D Di, ... ACS nano 11 (11), 11100-11107, 2017 | 212 | 2017 |
| Highly crystallized α-FeOOH for a stable and efficient oxygen evolution reaction W Luo, C Jiang, Y Li, SA Shevlin, X Han, K Qiu, Y Cheng, Z Guo, ... Journal of Materials Chemistry A 5 (5), 2021-2028, 2017 | 176 | 2017 |
| Band inversion mechanism in topological insulators: A guideline for materials design Z Zhu, Y Cheng, U Schwingenschlögl Physical Review B—Condensed Matter and Materials Physics 85 (23), 235401, 2012 | 160 | 2012 |
| Photovoltaic heterojunctions of fullerenes with MoS2 and WS2 monolayers LY Gan, Q Zhang, Y Cheng*, U Schwingenschlögl* The journal of physical chemistry letters 5 (8), 1445-1449, 2014 | 153 | 2014 |
| Atomic-Scale Observation of Lithiation Reaction Front in Nanoscale SnO2 Materials A Nie, LY Gan, Y Cheng, H Asayesh-Ardakani, Q Li, C Dong, R Tao, ... Acs Nano 7 (7), 6203-6211, 2013 | 149 | 2013 |
| Effects of strain on electronic and optic properties of holey two-dimensional C2N crystals S Guan, Y Cheng, C Liu, J Han, Y Lu, SA Yang, Y Yao Applied Physics Letters 107 (23), 231904, 2015 | 144 | 2015 |
| Hole doped Dirac states in silicene by biaxial tensile strain TP Kaloni, YC Cheng, U Schwingenschlögl Journal of Applied Physics 113 (10), 2013 | 137 | 2013 |
| Topological phase transition in layered GaS and GaSe Z Zhu, Y Cheng, U Schwingenschlögl Physical review letters 108 (26), 266805, 2012 | 137 | 2012 |
| Intrinsic point defects in inorganic perovskite CsPbI3 from first-principles prediction Y Li, C Zhang, X Zhang, D Huang, Q Shen, Y Cheng*, W Huang Applied Physics Letters 111 (16), 162106, 2017 | 136 | 2017 |
