| Analysis and simulation of heterostructure devices V Palankovski, R Quay Springer Science & Business Media, 2004 | 289 | 2004 |
| High-temperature modeling of algan/gan hemts S Vitanov, V Palankovski, S Maroldt, R Quay Solid-State Electronics 54 (10), 1105-1112, 2010 | 194 | 2010 |
| A temperature dependent model for the saturation velocity in semiconductor materials R Quay, C Moglestue, V Palankovski, S Selberherr Materials Science in Semiconductor Processing 3 (1-2), 149-155, 2000 | 181 | 2000 |
| Electron mobility model for strained-Si devices S Dhar, H Kosina, V Palankovski, SE Ungersböck, S Selberherr IEEE Transactions on Electron Devices 52 (4), 527-533, 2005 | 143 | 2005 |
| Study of dopant-dependent band gap narrowing in compound semiconductor devices V Palankovski, G Kaiblinger-Grujin, S Selberherr Materials Science and Engineering: B 66 (1-3), 46-49, 1999 | 87 | 1999 |
| Simulation of heterojunction bipolar transistors V Palankovski Technische Universität Wien, 2000 | 81 | 2000 |
| Simulation of power heterojunction bipolar transistors on gallium arsenide V Palankovski, R Schultheis, S Selberherr IEEE Transactions on Electron Devices 48 (6), 1264-1269, 2001 | 74 | 2001 |
| Physics-based modeling of GaN HEMTs S Vitanov, V Palankovski, S Maroldt, R Quay, S Murad, T Rodle, ... IEEE Transactions on Electron Devices 59 (3), 685-693, 2012 | 70 | 2012 |
| An energy relaxation time model for device simulation B Gonzalez, V Palankovski, H Kosina, A Hernandez, S Selberherr Solid-state electronics 43 (9), 1791-1795, 1999 | 63 | 1999 |
| Wigner transport models of the electron-phonon kinetics in quantum wires M Nedjalkov, D Vasileska, DK Ferry, C Jacoboni, C Ringhofer, I Dimov, ... Physical Review B—Condensed Matter and Materials Physics 74 (3), 035311, 2006 | 51 | 2006 |
| MINIMOS-NT user’s guide T Binder, K Dragosits, T Grasser, R Klima, M Knaipp, H Kosina, R Mlekus, ... Institut für Mikroelektronik 85, 49-65, 1998 | 50 | 1998 |
| Field-plate optimization of alGaN/GaN HEMTs V Palankovski, S Vitanov, R Quay 2006 IEEE Compound semiconductor integrated circuit symposium, 107-110, 2006 | 49 | 2006 |
| Hot-electron-related degradation in InAlN/GaN high-electron-mobility transistors M Ťapajna, N Killat, V Palankovski, D Gregušová, K Čičo, JF Carlin, ... IEEE Transactions on Electron Devices 61 (8), 2793-2801, 2014 | 47 | 2014 |
| Mean-field model for the growth and coarsening of stoichiometric precipitates at grain boundaries E Kozeschnik, J Svoboda, R Radis, FD Fischer Modelling and simulation in materials science and engineering 18 (1), 015011, 2009 | 47 | 2009 |
| Thermal models for semiconductor device simulation V Palankovski, S Selberherr HITEN 99. Third European Conference on High Temperature Electronics.(IEEE …, 1999 | 47 | 1999 |
| Schottky-barrier normally off GaN/InAlN/AlN/GaN HEMT with selectively etched access region M Jurkovic, D Gregusova, V Palankovski, Š Hascik, M Blaho, K Cico, ... IEEE electron device letters 34 (3), 432-434, 2013 | 38 | 2013 |
| Normally-off AlGaN/GaN HEMTs with InGaN cap layer: A simulation study S Vitanov, V Palankovski Solid-State Electronics 52 (11), 1791-1795, 2008 | 37 | 2008 |
| Industrial application of heterostructure device simulation V Palankovski, R Quay, S Selberherr IEEE Journal of Solid-State Circuits 36 (9), 1365-1370, 2001 | 36 | 2001 |
| Negative differential mobility in GaAs at ultrahigh fields: Comparison between an experiment and simulations S Vainshtein, V Yuferev, V Palankovski, DS Ong, J Kostamovaara Applied Physics Letters 92 (6), 2008 | 34 | 2008 |
| Nonlinear electronic transport and device performance of HEMTs R Quay, K Hess, R Reuter, M Schlechtweg, T Grave, V Palankovski, ... IEEE transactions on electron devices 48 (2), 210-217, 2001 | 29 | 2001 |
Siegfried SelberherrInstitute for Microelectronics, TU Wienยืนยันอีเมลแล้วที่ TUWien.ac.at
