| Resistance random access memory TC Chang, KC Chang, TM Tsai, TJ Chu, SM Sze Materials Today 19 (5), 254-264, 2016 | 543 | 2016 |
| Physical and chemical mechanisms in oxide-based resistance random access memory KC Chang, TC Chang, TM Tsai, R Zhang, YC Hung, YE Syu, YF Chang, ... Nanoscale research letters 10, 1-27, 2015 | 158 | 2015 |
| Redox Reaction Switching Mechanism in RRAM Device With Structure YE Syu, TC Chang, TM Tsai, YC Hung, KC Chang, MJ Tsai, MJ Kao, ... IEEE Electron Device Letters 32 (4), 545-547, 2011 | 145 | 2011 |
| Atomic-level quantized reaction of HfOx memristor YE Syu, TC Chang, JH Lou, TM Tsai, KC Chang, MJ Tsai, YL Wang, M Liu, ... Applied Physics Letters 102 (17), 2013 | 131 | 2013 |
| Integrated One Diode–One Resistor Architecture in Nanopillar SiOx Resistive Switching Memory by Nanosphere Lithography L Ji, YF Chang, B Fowler, YC Chen, TM Tsai, KC Chang, MC Chen, ... Nano letters 14 (2), 813-818, 2014 | 121 | 2014 |
| Functionally complete Boolean logic in 1T1R resistive random access memory ZR Wang, YT Su, Y Li, YX Zhou, TJ Chu, KC Chang, TC Chang, TM Tsai, ... IEEE Electron Device Letters 38 (2), 179-182, 2016 | 119 | 2016 |
| Nanopolydopamine coupled fluorescent nanozinc oxide reinforced epoxy nanocomposites C Liang, P Song, H Gu, C Ma, Y Guo, H Zhang, X Xu, Q Zhang, J Gu Composites Part A: Applied Science and Manufacturing 102, 126-136, 2017 | 113 | 2017 |
| Low-power bipolar resistive switching TiN/HfO2/ITO memory with self-compliance current phenomenon C Ye, C Zhan, TM Tsai, KC Chang, MC Chen, TC Chang, T Deng, ... Applied Physics Express 7 (3), 034101, 2014 | 107 | 2014 |
| HfO2‐Based Memristor as an Artificial Synapse for Neuromorphic Computing with Tri‐Layer HfO2/BiFeO3/HfO2 Design Z Peng, F Wu, L Jiang, G Cao, B Jiang, G Cheng, S Ke, KC Chang, L Li, ... Advanced Functional Materials 31 (48), 2107131, 2021 | 106 | 2021 |
| A low-temperature method for improving the performance of sputter-deposited ZnO thin-film transistors with supercritical fluid MC Chen, TC Chang, SY Huang, KC Chang, HW Li, SC Chen, J Lu, Y Shi Applied Physics Letters 94 (16), 2009 | 87 | 2009 |
| Attaining resistive switching characteristics and selector properties by varying forming polarities in a single HfO2-based RRAM device with a vanadium electrode CY Lin, PH Chen, TC Chang, KC Chang, SD Zhang, TM Tsai, CH Pan, ... Nanoscale 9 (25), 8586-8590, 2017 | 77 | 2017 |
| Characteristics and mechanisms of silicon-oxide-based resistance random access memory KC Chang, TM Tsai, TC Chang, HH Wu, JH Chen, YE Syu, GW Chang, ... IEEE electron device letters 34 (3), 399-401, 2013 | 76 | 2013 |
| Charge quantity influence on resistance switching characteristic during forming process TJ Chu, TC Chang, TM Tsai, HH Wu, JH Chen, KC Chang, TF Young, ... IEEE Electron Device Letters 34 (4), 502-504, 2013 | 72 | 2013 |
| Deformable, resilient, and mechanically-durable triboelectric nanogenerator based on recycled coffee waste for wearable power and self-powered smart sensors M Li, WY Cheng, YC Li, HM Wu, YC Wu, HW Lu, SL Cheng, L Li, ... Nano Energy 79, 105405, 2021 | 70 | 2021 |
| Nonvolatile reconfigurable sequential logic in a HfO 2 resistive random access memory array YX Zhou, Y Li, YT Su, ZR Wang, LY Shih, TC Chang, KC Chang, SB Long, ... Nanoscale 9 (20), 6649-6657, 2017 | 68 | 2017 |
| Characterization of oxygen accumulation in indium-tin-oxide for resistance random access memory R Zhang, KC Chang, TC Chang, TM Tsai, SY Huang, WJ Chen, KH Chen, ... IEEE electron device letters 35 (6), 630-632, 2014 | 67 | 2014 |
| Low Temperature Improvement Method on Resistive Random Access Memory Devices KC Chang, TM Tsai, TC Chang, HH Wu, KH Chen, JH Chen, TF Young, ... IEEE electron device letters 34 (4), 511-513, 2013 | 65* | 2013 |
| Realization of functional complete stateful Boolean logic in memristive crossbar Y Li, YX Zhou, L Xu, K Lu, ZR Wang, N Duan, L Jiang, L Cheng, ... ACS applied materials & interfaces 8 (50), 34559-34567, 2016 | 64 | 2016 |
| Reducing operation current of Ni-doped silicon oxide resistance random access memory by supercritical CO2 fluid treatment KC Chang, TM Tsai, TC Chang, YE Syu, CC Wang, SL Chuang, CH Li, ... Applied Physics Letters 99 (26), 2011 | 62 | 2011 |
| Origin of hopping conduction in graphene-oxide-doped silicon oxide resistance random access memory devices KC Chang, R Zhang, TC Chang, TM Tsai, JC Lou, JH Chen, TF Young, ... IEEE electron device letters 34 (5), 677-679, 2013 | 61 | 2013 |
