| Selective terahertz emission due to electrically excited 2D plasmons in AlGaN/GaN heterostructure VA Shalygin, MD Moldavskaya, MY Vinnichenko, KV Maremyanin, ... Journal of Applied Physics 126 (18), 2019 | 35 | 2019 |
| Investigation of statistical broadening in InGaN alloys DS Arteev, AV Sakharov, EE Zavarin, WV Lundin, AN Smirnov, ... Journal of Physics: Conference Series 1135 (1), 012050, 2018 | 26 | 2018 |
| Temperature-dependent luminescent properties of dual-wavelength InGaN LEDs DS Arteev, AV Sakharov, AE Nikolaev, WV Lundin, AF Tsatsulnikov Journal of Luminescence 234, 117957, 2021 | 16 | 2021 |
| Influence of doping profile of GaN: Fe buffer layer on the properties of AlGaN/AlN/GaN heterostructures for high-electron mobility transistors DS Arteev, AV Sakharov, WV Lundin, EE Zavarin, DA Zakheim, ... Journal of Physics: Conference Series 1697 (1), 012206, 2020 | 11 | 2020 |
| Carrier mobility in the channel of AlGaN/(AlN)/GaN and InAlN/(AlN)/GaN heterostructures, limited by different scattering mechanisms: experiment and calculation DS Arteev, AV Sakharov, WV Lundin, DA Zakheim, EE Zavarin, ... Journal of Physics: Conference Series 1400 (7), 077009, 2019 | 9 | 2019 |
| InAlN/GaN and AlGaN/GaN HEMT technologies comparison for microwave applications LE Velikovskiy, PE Sim, OI Demchenko, NE Kurbanova, IA Filippov, ... IOP Conference Series: Materials Science and Engineering 1019 (1), 012071, 2021 | 7 | 2021 |
| Scattering analysis of AlGaN/AlN/GaN heterostructures with Fe-doped GaN buffer DS Arteev, AV Sakharov, WV Lundin, EE Zavarin, AE Nikolaev, ... Materials 15 (24), 8945, 2022 | 6 | 2022 |
| Influence of AlN/GaN interfacial non-idealities on the properties of two-dimensional electron gas in AlGaN/AlN/GaN heterostructures DS Arteev, AV Sakharov, WV Lundin, EE Zavarin, AF Tsatsulnikov Journal of Physics: Conference Series 2103 (1), 012202, 2021 | 4 | 2021 |
| Localized-state ensemble model analysis of InGaN/GaN quantum well structures with different dislocation densities DS Arteev, AV Sakharov, EE Zavarin, WV Lundin, MV Rzheutski, ... Semiconductor Science and Technology 36 (12), 125007, 2021 | 4 | 2021 |
| Разработки и исследования СВЧ транзисторов на основе AlGaN/GaN и InAlN/GaN гетероструктур ЛЭ Великовский, ПЕ Сим, ОИ Демченко, НЕ Курбанова, АВ Сахаров, ... Мокеровские чтения, 33-36, 2019 | 4 | 2019 |
| Determination of hole diffusion length in n-GaN DS Arteev, AV Sakharov, AE Nikolaev, EE Zavarin, WV Lundin, ... Journal of Physics: Conference Series 2086 (1), 012075, 2021 | 3 | 2021 |
| Luminescence line broadening caused by alloy disorder in InGaN quantum wells DS Arteev, AV Sakharov, WV Lundin, EE Zavarin, DA Zakheim, ... Semiconductors 53, 1900-1903, 2019 | 3 | 2019 |
| Two-dimensional plasmons in a GaN/AlGaN heterojunction MY Vinnichenko, VA Shalygin, MD Moldavskaya, AA Artemyev, ... Journal of Physics: Conference Series 1199 (1), 012014, 2019 | 3 | 2019 |
| Emission spectrum control in monolithic blue-cyan dichromatic light-emitting diodes DS Arteev, SY Karpov, AV Sakharov, AE Nikolaev, SO Usov, WV Lundin, ... Semiconductor Science and Technology 35 (4), 045017, 2020 | 2 | 2020 |
| Stress Analysis of GaN-Based Heterostructures on Silicon Substrates DS Arteev, AV Sakharov, EE Zavarin, AE Nikolaev, MA Yagovkina, ... Semiconductors 58 (2), 99-102, 2024 | 1 | 2024 |
| AlGaN HEMT Structures Grown on Miscut Si (111) Wafers AV Sakharov, DS Arteev, EE Zavarin, AE Nikolaev, WV Lundin, ... Materials 16 (12), 4265, 2023 | 1 | 2023 |
| Implementation of an artificial neural network to predict properties of MOVPE-grown AlGaN layers DS Arteev, AV Sakharov, WV Lundin, AE Nikolaev, AF Tsatsulnikov Journal of Physics: Conference Series 1199 (1), 012007, 2019 | 1 | 2019 |
| Luminescence peculiarities of InGaN/GaN dichromatic LEDs DS Arteev, AV Sakharov, AE Nikolaev, SO Usov, WV Lundin, ... Journal of Physics: Conference Series 816 (1), 012038, 2017 | 1 | 2017 |
| Enhancing Carriers’ Confinement by Introducing BAlGaN Quantum Barriers for the Better Optoelectronic Performance of Deep UV LEDs J Bashir, M Usman, DS Arteev, Z Noor, A Ali Photonics 12 (1), 49, 2025 | | 2025 |
| n+/p+ GaN and n+/p+ Al0.10Ga0.90N tunnel junctions: a promising alternative for hole injection in deep ultraviolet light-emitting diodes J Bashir, M Usman, DS Arteev, W Saeed Journal of Information Display, 1-7, 2024 | | 2024 |
