| Stacked nanosheet gate-all-around transistor to enable scaling beyond FinFET N Loubet, T Hook, P Montanini, CW Yeung, S Kanakasabapathy, ... 2017 symposium on VLSI technology, T230-T231, 2017 | 997 | 2017 |
| High performance 14nm SOI FinFET CMOS technology with 0.0174µm2 embedded DRAM and 15 levels of Cu metallization CH Lin, B Greene, S Narasimha, J Cai, A Bryant, C Radens, V Narayanan, ... 2014 IEEE International Electron Devices Meeting, 3.8. 1-3.8. 3, 2014 | 195 | 2014 |
| High performance low power bulk FET device and method of manufacture J Cai, T Furukawa, RR Robison US Patent 8,361,872, 2013 | 129 | 2013 |
| 22nm High-performance SOI technology featuring dual-embedded stressors, Epi-Plate High-K deep-trench embedded DRAM and self-aligned Via 15LM BEOL S Narasimha, P Chang, C Ortolland, D Fried, E Engbrecht, K Nummy, ... 2012 International Electron Devices Meeting, 3.3. 1-3.3. 4, 2012 | 107 | 2012 |
| Channel geometry impact and narrow sheet effect of stacked nanosheet CW Yeung, J Zhang, R Chao, O Kwon, R Vega, G Tsutsui, X Miao, ... 2018 IEEE international electron devices meeting (IEDM), 28.6. 1-28.6. 4, 2018 | 94 | 2018 |
| Full bottom dielectric isolation to enable stacked nanosheet transistor for low power and high performance applications J Zhang, J Frougier, A Greene, X Miao, L Yu, R Vega, P Montanini, ... 2019 IEEE International Electron Devices Meeting (IEDM), 11.6. 1-11.6. 4, 2019 | 83 | 2019 |
| FINFET technology featuring high mobility SiGe channel for 10nm and beyond D Guo, G Karve, G Tsutsui, KY Lim, R Robison, T Hook, R Vega, D Liu, ... 2016 IEEE Symposium on VLSI Technology, 1-2, 2016 | 73 | 2016 |
| Vertical-transport nanosheet technology for CMOS scaling beyond lateral-transport devices H Jagannathan, B Anderson, CW Sohn, G Tsutsui, J Strane, R Xie, S Fan, ... 2021 IEEE International Electron Devices Meeting (IEDM), 26.1. 1-26.1. 4, 2021 | 47 | 2021 |
| Observation of fluorine-vacancy complexes in silicon PJ Simpson, Z Jenei, P Asoka-Kumar, RR Robison, ME Law Applied physics letters 85 (9), 1538-1540, 2004 | 41 | 2004 |
| Subtractive vFET process flow with replacement metal gate and metallic source/drain HV Mallela, RR Robison, RA Vega, R Venigalla US Patent 11,056,391, 2021 | 38 | 2021 |
| Compact thermally controlled thin film resistors utilizing substrate contacts and methods of manufacture JM Lukaitis, JH Rankin, RR Robison, DK Slisher, TD Sullivan US Patent 8,652,922, 2014 | 35 | 2014 |
| Butted SOI junction isolation structures and devices and method of fabrication JB Johnson, S Narasimha, HM Nayfeh, V Ontalus, RR Robison US Patent 8,741,725, 2014 | 26 | 2014 |
| Enhanced stress-retention silicon-on-insulator devices and methods of fabricating enhanced stress retention silicon-on-insulator devices KV Chatty, RJ Gauthier Jr, JH Rankin, RR Robison, WR Tonti US Patent 7,737,498, 2010 | 26 | 2010 |
| First-Principles Evaluation of fcc Ruthenium for its use in Advanced Interconnects TM Philip, NA Lanzillo, T Gunst, T Markussen, J Cobb, S Aboud, ... Physical Review Applied 13 (4), 044045, 2020 | 25 | 2020 |
| Vertical fin field effect transistor with air gap spacers HV Mallela, RR Robison, RA Vega, R Venigalla US Patent 9,911,804, 2018 | 23 | 2018 |
| Vertical field effect transistor with subway etch replacement metal gate RR Robison, RA Vega, R Venigalla US Patent 9,859,421, 2018 | 23 | 2018 |
| Nanosheet MOSFET with partial release and source/drain epitaxy MA Guillorn, TB Hook, NJ Loubet, RR Robison, RA Vega US Patent 10,249,739, 2019 | 22 | 2019 |
| Semiconductor-on-insulator (SOI) structure with selectively placed sub-insulator layer void (s) and method of forming the SOI structure T Furukawa, RR Robison, RQ Williams US Patent 8,610,211, 2013 | 21 | 2013 |
| Vertical field effect transistors with metallic source/drain regions HV Mallela, RR Robison, R Vega, R Venigalla US Patent 9,728,466, 2017 | 18 | 2017 |
| Impact of lateral asymmetric channel doping on 45-nm-technology N-type SOI MOSFETs HM Nayfeh, N Rovedo, A Bryant, S Narasimha, A Kumar, X Yu, N Su, ... IEEE transactions on electron devices 56 (12), 3097-3105, 2009 | 17 | 2009 |
