| X-ray diffraction peaks due to misfit dislocations in heteroepitaxial structures VM Kaganer, R Köhler, M Schmidbauer, R Opitz, B Jenichen Physical Review B 55 (3), 1793, 1997 | 404 | 1997 |
| Surface reconstructions of zinc-blende GaN/GaAs (001) in plasma-assisted molecular-beam epitaxy O Brandt, H Yang, B Jenichen, Y Suzuki, L Däweritz, KH Ploog Physical Review B 52 (4), R2253, 1995 | 215 | 1995 |
| Correlation of structure and magnetism in GaAs with embedded Mn (Ga) As magnetic nanoclusters M Moreno, A Trampert, B Jenichen, L Däweritz, KH Ploog Journal of Applied Physics 92 (8), 4672-4677, 2002 | 190 | 2002 |
| Strain-mediated phase coexistence in heteroepitaxial films VM Kaganer, B Jenichen, F Schippan, W Braun, L Däweritz, KH Ploog Physical review letters 85 (2), 341, 2000 | 177 | 2000 |
| Luminescence of GaAs nanowires consisting of wurtzite and zinc-blende segments U Jahn, J Lähnemann, C Pfüller, O Brandt, S Breuer, B Jenichen, ... Physical Review B—Condensed Matter and Materials Physics 85 (4), 045323, 2012 | 152 | 2012 |
| Strain-mediated phase coexistence in MnAs heteroepitaxial films on GaAs: An x-ray diffraction study VM Kaganer, B Jenichen, F Schippan, W Braun, L Däweritz, KH Ploog Physical Review B 66 (4), 045305, 2002 | 145 | 2002 |
| Properties of GaN nanowires grown by molecular beam epitaxy L Geelhaar, C Cheze, B Jenichen, O Brandt, C Pfüller, S Münch, ... IEEE Journal of Selected Topics in Quantum Electronics 17 (4), 878-888, 2011 | 142 | 2011 |
| Periodic elastic domains of coexisting phases in epitaxial MnAs films on GaAs T Plake, M Ramsteiner, VM Kaganer, B Jenichen, M Kästner, L Däweritz, ... Applied physics letters 80 (14), 2523-2525, 2002 | 127 | 2002 |
| Cyclotron-resonance-assisted photocurrents in surface states of a three-dimensional topological insulator based on a strained high-mobility HgTe film KM Dantscher, DA Kozlov, P Olbrich, C Zoth, P Faltermeier, M Lindner, ... Physical Review B 92 (16), 165314, 2015 | 114 | 2015 |
| Weak antilocalization and electron-electron interaction effects in Cu-doped BiSe films Y Takagaki, B Jenichen, U Jahn, M Ramsteiner, KJ Friedland Physical Review B—Condensed Matter and Materials Physics 85 (11), 115314, 2012 | 109 | 2012 |
| Strong localization in InGaN layers with high In content grown by molecular-beam epitaxy FB Naranjo, MA Sánchez-Garcıa, F Calle, E Calleja, B Jenichen, ... Applied physics letters 80 (2), 231-233, 2002 | 105 | 2002 |
| Combined molecular beam epitaxy and diffractometer system for in situ x-ray studies of crystal growth B Jenichen, W Braun, VM Kaganer, AG Shtukenberg, L Däweritz, ... Review of scientific instruments 74 (3), 1267-1273, 2003 | 92 | 2003 |
| Influence of the interface composition of InAs/AlSb superlattices on their optical and structural properties J Spitzer, A Höpner, M Kuball, M Cardona, B Jenichen, H Neuroth, B Brar, ... Journal of applied physics 77 (2), 811-820, 1995 | 84 | 1995 |
| Macro-and micro-strain in GaN nanowires on Si (111) B Jenichen, O Brandt, C Pfueller, P Dogan, M Knelangen, A Trampert Nanotechnology 22 (29), 295714, 2011 | 82 | 2011 |
| Depth‐resolved measurement of lattice relaxation in Ga1−xInxAs/GaAs strained layer superlattices by means of grazing‐incidence x‐ray diffraction U Pietsch, H Metzger, S Rugel, B Jenichen, IK Robinson Journal of applied physics 74 (4), 2381-2387, 1993 | 72 | 1993 |
| MnAs nanoclusters embedded in GaAs studied by x-ray diffuse and coherent scattering M Moreno, B Jenichen, V Kaganer, W Braun, A Trampert, L Däweritz, ... Physical Review B 67 (23), 235206, 2003 | 67 | 2003 |
| Different growth rates for catalyst-induced and self-induced GaN nanowires C Chèze, L Geelhaar, B Jenichen, H Riechert Applied Physics Letters 97 (15), 2010 | 64 | 2010 |
| Correlation between the structural and optical properties of spontaneously formed GaN nanowires: a quantitative evaluation of the impact of nanowire coalescence S Fernández-Garrido, VM Kaganer, C Hauswald, B Jenichen, ... Nanotechnology 25 (45), 455702, 2014 | 58 | 2014 |
| Structural properties of GaN layers on Si (001) grown by plasma-assisted molecular beam epitaxy B Yang, A Trampert, O Brandt, B Jenichen, KH Ploog Journal of applied physics 83 (7), 3800-3806, 1998 | 57 | 1998 |
| Long-range order in thin epitaxial films grown on GaAs(001) B Jenichen, VM Kaganer, J Herfort, DK Satapathy, HP Schönherr, ... Physical Review B—Condensed Matter and Materials Physics 72 (7), 075329, 2005 | 56 | 2005 |
Vladimir KaganerPaul-Drude-Institut für Festkörperelektronikยืนยันอีเมลแล้วที่ pdi-berlin.de