บทความที่มีข้อกำหนดการเข้าถึงสาธารณะ - Weijie Wangดูข้อมูลเพิ่มเติม
ไม่มีให้ใช้งานในทุกที่: 2
Mode distortion and performance degradation caused by electron-beam misalignment in W-band gyro-TWTs
Y Wang, G Liu, Y Cao, W Wang, W Jiang, Y Yao, J Wang, Y Luo
IEEE Transactions on Electron Devices 70 (6), 3315-3321, 2023
ข้อกำหนด: National Natural Science Foundation of China
Theory and measurement of the single and hybrid-mode excitation and evolution in a lossy-dielectric-loaded waveguide
W Wang, G Liu, Y Cao, B Chen, Y Yao, Y Wang, X Gong, W Jiang, J Wang, ...
Journal of Electromagnetic Waves and Applications 37 (4), 510-523, 2023
ข้อกำหนด: National Natural Science Foundation of China
มีให้ใช้งานในบางที่: 9
Biocompatible and sustainable power supply for self-powered wearable and implantable electronics using III-nitride thin-film-based flexible piezoelectric generator
J Chen, SK Oh, N Nabulsi, H Johnson, W Wang, JH Ryou
Nano Energy 57, 670-679, 2019
ข้อกำหนด: US National Science Foundation, Chinese Academy of Sciences
Highly‐sensitive skin‐attachable eye‐movement sensor using flexible nonhazardous piezoelectric thin film
NI Kim, J Chen, W Wang, M Moradnia, S Pouladi, MK Kwon, JY Kim, X Li, ...
Advanced Functional Materials 31 (8), 2008242, 2021
ข้อกำหนด: US National Science Foundation
Output characteristics of thin-film flexible piezoelectric generators: A numerical and experimental investigation
J Chen, N Nabulsi, W Wang, JY Kim, MK Kwon, JH Ryou
Applied Energy 255, 113856, 2019
ข้อกำหนด: US National Science Foundation, National Natural Science Foundation of China
Effects of grain boundaries on conversion efficiencies of single-crystal-like GaAs thin-film solar cells on flexible metal tapes
S Pouladi, M Asadirad, SK Oh, S Shervin, J Chen, W Wang, CN Manh, ...
Solar Energy Materials and Solar Cells 199, 122-128, 2019
ข้อกำหนด: US Department of Energy
High-power flexible AlGaN/GaN heterostructure field-effect transistors with suppression of negative differential conductance
SK Oh, MU Cho, J Dallas, T Jang, DG Lee, S Pouladi, J Chen, W Wang, ...
Applied Physics Letters 111 (13), 2017
ข้อกำหนด: US Department of Defense
Modulation of the two-dimensional electron gas channel in flexible AlGaN/GaN high-electron-mobility transistors by mechanical bending
W Wang, J Chen, JS Lundh, S Shervin, SK Oh, S Pouladi, Z Rao, JY Kim, ...
Applied Physics Letters 116 (12), 2020
ข้อกำหนด: US National Science Foundation, US Department of Defense
The doping dependence of the thermal conductivity of bulk gallium nitride substrates
Y Song, JS Lundh, W Wang, JH Leach, D Eichfeld, A Krishnan, C Perez, ...
Journal of Electronic Packaging 142 (4), 041112, 2020
ข้อกำหนด: US National Science Foundation, US Department of Defense
Polarization modulation effect of BeO on AlGaN/GaN high-electron-mobility transistors
W Wang, SM Lee, S Pouladi, J Chen, S Shervin, S Yoon, JH Yum, ...
Applied Physics Letters 115 (10), 2019
ข้อกำหนด: US National Science Foundation, US Department of Defense
Significant improvement of conversion efficiency by passivation of low-angle grain boundaries in flexible low-cost single-crystal-like GaAs thin-film solar cells directly …
S Pouladi, C Favela, W Wang, M Moradnia, NI Kim, S Shervin, J Chen, ...
Solar Energy Materials and Solar Cells 243, 111791, 2022
ข้อกำหนด: US Department of Energy
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