Air sensitivity of MoS2, MoSe2, MoTe2, HfS2, and HfSe2 G Mirabelli, C McGeough, M Schmidt, EK McCarthy, S Monaghan, ...
Journal of Applied Physics 120 (12), 2016
195 2016 Wide spectral photoresponse of layered platinum diselenide-based photodiodes C Yim, N McEvoy, S Riazimehr, DS Schneider, F Gity, S Monaghan, ...
Nano Letters 18 (3), 1794-1800, 2018
188 2018 A systematic study of (NH4) 2S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2O3/In0. 53Ga0. 47As/InP system for n-type and p-type In0. 53Ga0. 47As … É O’Connor, B Brennan, V Djara, K Cherkaoui, S Monaghan, ...
Journal of Applied Physics 109 (2), 2011
172 2011 Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures S Monaghan, PK Hurley, K Cherkaoui, MA Negara, A Schenk
Solid-State Electronics 53 (4), 438-444, 2009
168 2009 Temperature and frequency dependent electrical characterization of HfO2/InxGa1− xAs interfaces using capacitance-voltage and conductance methods É O’Connor, S Monaghan, RD Long, A O’Mahony, IM Povey, K Cherkaoui, ...
Applied Physics Letters 94 (10), 2009
128 2009 Quantum confinement-induced semimetal-to-semiconductor evolution in large-area ultra-thin PtSe2 films grown at 400 °C L Ansari, S Monaghan, N McEvoy, CÓ Coileáin, CP Cullen, J Lin, R Siris, ...
npj 2D Materials and Applications 3 (1), 33, 2019
94 2019 Electrical, structural, and chemical properties of HfO2 films formed by electron beam evaporation K Cherkaoui, S Monaghan, MA Negara, M Modreanu, PK Hurley, ...
Journal of Applied Physics 104 (6), 2008
88 2008 An investigation of capacitance-voltage hysteresis in metal/high-k/In0. 53Ga0. 47As metal-oxide-semiconductor capacitors J Lin, YY Gomeniuk, S Monaghan, IM Povey, K Cherkaoui, É O'Connor, ...
Journal of Applied Physics 114 (14), 2013
70 2013 Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0. 53Ga0. 47As/InP capacitors following an optimized (NH4) 2S treatment É O’Connor, S Monaghan, K Cherkaoui, IM Povey, PK Hurley
Applied Physics Letters 99 (21), 2011
66 2011 Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0. 53Ga0. 47As capacitors with and without an Al2O3 interface control layer A O’Mahony, S Monaghan, G Provenzano, IM Povey, MG Nolan, ...
Applied Physics Letters 97 (5), 2010
66 2010 Impact of forming gas annealing on the performance of surface-channel In0. 53Ga0. 47As MOSFETs with an ALD Al2O3 gate dielectric V Djara, K Cherkaoui, M Schmidt, S Monaghan, É O'Connor, I Povey, ...
Institute of Electrical and Electronics Engineers (IEEE), 2012
65 2012 The Characterization and Passivation of Fixed Oxide Charges and Interface States in the PK Hurley, É O'Connor, V Djara, S Monaghan, IM Povey, RD Long, ...
IEEE Transactions on Device and Materials Reliability 13 (4), 429-443, 2013
57 2013 Rhenium-doped MoS2 films T Hallam, S Monaghan, F Gity, L Ansari, M Schmidt, C Downing, ...
Applied Physics Letters 111 (20), 2017
55 2017 Electrical analysis of three-stage passivated In0. 53Ga0. 47As capacitors with varying HfO2 thicknesses and incorporating an Al2O3 interface control layer S Monaghan, A O’Mahony, K Cherkaoui, É O’Connor, IM Povey, ...
Journal of Vacuum Science & Technology B 29 (1), 2011
41 2011 Charged Defect Quantification in Pt/Al2O3/In0. 53Ga0. 47As/InP MOS Capacitors RD Long, B Shin, S Monaghan, K Cherkaoui, J Cagnon, S Stemmer, ...
Journal of The Electrochemical Society 158 (5), G103, 2011
39 2011 Observation of peripheral charge induced low frequency capacitance-voltage behaviour in metal-oxide-semiconductor capacitors on Si and GaAs substrates É O’Connor, K Cherkaoui, S Monaghan, D O’Connell, I Povey, P Casey, ...
Journal of Applied Physics 111 (12), 2012
36 2012 Structural and Electrical Properties of HfO2/n-InxGa1-xAs structures (x: 0, 0.15, 0.3 and 0.53) PK Hurley, E O'Connor, S Monaghan, R Long, A O'Mahony, IM Povey, ...
ECS transactions 25 (6), 113, 2009
36 2009 Thermal decomposition mechanisms of hafnium and zirconium silicates at the atomic scale S Monaghan, JC Greer, SD Elliott
Journal of applied physics 97 (11), 2005
36 2005 Back-gated Nb-doped MoS2 junctionless field-effect-transistors G Mirabelli, M Schmidt, B Sheehan, K Cherkaoui, S Monaghan, I Povey, ...
AIP Advances 6 (2), 2016
34 2016 Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0. 53Ga0. 47As surfaces by atomic layer deposition RD Long, É O’Connor, SB Newcomb, S Monaghan, K Cherkaoui, ...
Journal of Applied Physics 106 (8), 2009
34 2009 