| Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures S Monaghan, PK Hurley, K Cherkaoui, MA Negara, A Schenk Solid-State Electronics 53 (4), 438-444, 2009 | 168 | 2009 |
| Electrical, structural, and chemical properties of HfO2 films formed by electron beam evaporation K Cherkaoui, S Monaghan, MA Negara, M Modreanu, PK Hurley, ... Journal of Applied Physics 104 (6), 2008 | 88 | 2008 |
| Impact of H< sub> 2</sub>/N< sub> 2</sub> annealing on interface defect densities in Si (100)/SiO< sub> 2</sub>/HfO< sub> 2</sub>/TiN gate stacks M Schmidt, MC Lemme, H Kurz, T Witters, T Schram, K Cherkaoui, ... Microelectronic engineering 80, 70-73, 2005 | 55* | 2005 |
| Interface Trap Density Reduction for Al2O3/GaN (0001) Interfaces by Oxidizing Surface Preparation prior to Atomic Layer Deposition DM Zhernokletov, MA Negara, RD Long, S Aloni, D Nordlund, ... ACS applied materials & interfaces 7 (23), 12774-12780, 2015 | 51 | 2015 |
| Analysis of electron mobility in HfO2/TiN gate metal-oxide-semiconductor field effect transistors: The influence of HfO2 thickness, temperature, and oxide charge MA Negara, K Cherkaoui, PK Hurley, CD Young, P Majhi, W Tsai, ... Journal of Applied Physics 105 (2), 2009 | 37 | 2009 |
| Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices MA Negara, M Kitano, RD Long, PC McIntyre ACS applied materials & interfaces 8 (32), 21089-21094, 2016 | 27 | 2016 |
| The influence of HfO2 film thickness on the interface state density and low field mobility of n channel HfO2/TiN gate MOSFETs MA Negara, K Cherkaoui, P Majhi, CD Young, W Tsai, D Bauza, ... Microelectronic Engineering 84 (9-10), 1874-1877, 2007 | 25 | 2007 |
| Extreme learning machine and back propagation neural network comparison for temperature and humidity control of oyster mushroom based on microcontroller GM Fuady, AH Turoobi, MN Majdi, M Syaiin, RY Adhitya, I Rachman, ... 2017 International Symposium on Electronics and Smart Devices (ISESD), 46-50, 2017 | 23 | 2017 |
| Analysis of effective mobility and hall effect mobility in high-k based In0. 75Ga0. 25As metal-oxide-semiconductor high-electron-mobility transistors MA Negara, D Veksler, J Huang, G Ghibaudo, PK Hurley, G Bersuker, ... Applied Physics Letters 99 (23), 2011 | 21 | 2011 |
| The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces T Kent, K Tang, V Chobpattana, MA Negara, M Edmonds, W Mitchell, ... The Journal of Chemical Physics 143 (16), 2015 | 20 | 2015 |
| The formation and characterisation of lanthanum oxide based Si/high-k/NiSi gate stacks by electron-beam evaporation: an examination of in-situ amorphous silicon capping and … P Hurley, M Pijolat, K Cherkaoui, E O'Connor, D O'Connell, MA Negara, ... ECS Transactions 11 (4), 145, 2007 | 13 | 2007 |
| Interface state densities, low frequency noise and electron mobility in surface channel In0. 53Ga0. 47As n-MOSFETs with a ZrO2 gate dielectric MA Negara, N Goel, D Bauza, G Ghibaudo, PK Hurley Microelectronic engineering 88 (7), 1095-1097, 2011 | 11 | 2011 |
| Investigation of electron mobility in surface-channel Al2O3/In0. 53Ga0. 47As MOSFETs MA Negara, V Djara, TP O’Regan, K Cherkaoui, M Burke, YY Gomeniuk, ... Solid-state electronics 88, 37-42, 2013 | 8 | 2013 |
| Equivalent oxide thickness correction in the high-k/In0. 53Ga0. 47As/InP system PK Hurley, R Long, T O'Regan, E O'Connor, S Monaghan, V Djara, ... ECS Transactions 33 (3), 433, 2010 | 8 | 2010 |
| Can metal/Al2O3/In0. 53Ga0. 47As/InP MOSCAP properties translate to metal/Al2O3/In0. 53Ga0. 47As/InP MOSFET characteristics K Cherkaoui, V Djara, É O'Connor, J Lin, MA Negara, IM Povey, ... ECS Transactions 45 (3), 79, 2012 | 5 | 2012 |
| Electrical properties of hfo2 films formed by ion assisted deposition K Cherkaoui, A Negara, S McDonnell, G Hughes, M Modreanu, PK Hurley 2006 25th International Conference on Microelectronics, 351-354, 2006 | 4 | 2006 |
| Multi-frequency inversion-charge pumping for charge separation and mobility analysis in high-k/InGaAs metal-oxide-semiconductor field-effect transistors V Djara, K Cherkaoui, MA Negara, PK Hurley Journal of Applied Physics 118 (20), 2015 | 3 | 2015 |
| Border Trap Analysis and Reduction in ALD-high-k InGaAs Gate Stacks K Tang, A Negara, T Kent, R Droopad, AC Kummel, PC McIntyre International Conference on Indium Phosphide and Related Materials (IPRM …, 2015 | 3 | 2015 |
| Determination of physical parameters for HfO2/SiOx/TiN MOSFET gate stacks by electrical characterization and reverse modeling S Monaghan, PK Hurley, K Cherkaoui, MA Negara, A Schenk 2008 9th International Conference on Ultimate Integration of Silicon, 107-110, 2008 | 3 | 2008 |
| Methodology to Investigate the Root Cause of Threshold Voltage Drift of Transistor Devices using Capacitance Voltage Measurements AC Keow, MA Negara 2019 IEEE 26th International Symposium on Physical and Failure Analysis of …, 2019 | 2 | 2019 |
