| Ion implantation in β-Ga2O3: Physics and technology A Nikolskaya, E Okulich, D Korolev, A Stepanov, D Nikolichev, ... Journal of Vacuum Science & Technology A 39 (3), 2021 | 86 | 2021 |
| Light-emitting 9R-Si phase formed by Kr+ ion implantation into SiO2/Si substrate AA Nikolskaya, DS Korolev, AN Mikhaylov, AI Belov, AA Sushkov, ... Applied Physics Letters 113 (18), 2018 | 26 | 2018 |
| Ion-beam modification of metastable gallium oxide polymorphs D Tetelbaum, A Nikolskaya, D Korolev, T Mullagaliev, A Belov, V Trushin, ... Materials Letters 302, 130346, 2021 | 20 | 2021 |
| Photoluminescence of silicon at 1235 nm produced by irradiation of SiO2/Si with Kr+ ions and subsequent high-temperature annealing AA Nikolskaya, DS Korolev, AN Mikhaylov, AA Konakov, AI Belov, ... Surface and Coatings Technology 386, 125496, 2020 | 13 | 2020 |
| Formation of hexagonal 9R silicon polytype by ion implantation DS Korolev, AA Nikolskaya, NO Krivulin, AI Belov, AN Mikhaylov, ... Technical Physics Letters 43, 767-769, 2017 | 12 | 2017 |
| Effect of Boron Impurity on the Light-Emitting Properties of Dislocation Structures Formed in Silicon by Si+ Ion Implantation AN Tereshchenko, DS Korolev, AN Mikhaylov, AI Belov, AA Nikolskaya, ... Semiconductors 52, 843-848, 2018 | 11 | 2018 |
| Disordering of β-Ga2O3 upon irradiation with Si+ ions: Effect of surface orientation V Trushin, A Nikolskaya, D Korolev, A Mikhaylov, A Belov, E Pitirimova, ... Materials Letters 319, 132248, 2022 | 8 | 2022 |
| Ion-Beam Synthesis of Gallium Oxide Nanocrystals in a SiO2/Si Dielectric Matrix DS Korolev, KS Matyunina, AA Nikolskaya, RN Kriukov, AV Nezhdanov, ... Nanomaterials 12 (11), 1840, 2022 | 7 | 2022 |
| Photoluminescence of ion-synthesized 9R-Si inclusions in SiO2/Si structure: Effect of irradiation dose and oxide film thickness A Nikolskaya, A Belov, A Mikhaylov, A Konakov, D Tetelbaum, D Korolev Applied Physics Letters 118 (21), 2021 | 7 | 2021 |
| Effect of Si+ Ion Implantation in α-Ga2O3 Films on Their Gas Sensitivity N Yakovlev, A Almaev, P Butenko, D Tetelbaum, A Mikhaylov, ... IEEE Sensors Journal 23 (3), 1885-1895, 2022 | 6 | 2022 |
| Influence of chemical nature of implanted atoms on photoluminescence of ion-synthesized 9R-Si hexagonal silicon A Nikolskaya, D Korolev, A Belov, A Konakov, D Pavlov, A Mikhaylov, ... Materials Letters 308, 131103, 2022 | 6 | 2022 |
| The Effects of Aluminum Gettering and Thermal Treatments on the Light‐Emitting Properties of Dislocation Structures in Self‐Implanted Silicon Subjected to Boron Ion Doping A Tereshchenko, D Korolev, M Khorosheva, A Mikhaylov, A Belov, ... physica status solidi (a) 216 (17), 1900323, 2019 | 6 | 2019 |
| Luminescence of modified W-centers arising in silicon upon irradiation of the SiO2/Si system by Kr+ ions A Nikolskaya, D Korolev, A Mikhaylov, A Konakov, A Okhapkin, S Kraev, ... Materials Letters 342, 134302, 2023 | 5 | 2023 |
| Temperature dependence of dislocation-related photoluminescence (D1) of self-implanted silicon subjected to additional boron implantation A Nikolskaya, D Korolev, A Tereshchenko, V Pavlenkov, S Nagornykh, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2020 | 5 | 2020 |
| Structural disorder and distribution of impurity atoms in β-Ga2O3 under boron ion implantation AA Nikolskaya, DS Korolev, VN Trushin, MN Drozdov, PA Yunin, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2023 | 4 | 2023 |
| Formation of Hexagonal Phase 9R-Si in SiO/Si System upon Kr Ion Implantation AA Nikolskaya, DS Korolev, AN Mikhaylov, AA Konakov, AI Okhapkin, ... Moscow University Physics Bulletin 78 (3), 361-367, 2023 | 3 | 2023 |
| Photoluminescent properties of the SiO2/Si system with ion-synthesized hexagonal silicon of the 9R-Si phase: Effect of post-implantation annealing AA Nikolskaya, DS Korolev, VN Trushin, PA Yunin, AN Mikhaylov, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2023 | 3 | 2023 |
| Admittance spectroscopy of dopants implanted in silicon and impurity state-induced AC magnetoresistance effect DA Smolyakov, AS Tarasov, MA Bondarev, AA Nikolskaya, VK Vasiliev, ... Materials Science in Semiconductor Processing 126, 105663, 2021 | 3 | 2021 |
| Thermally stable photoluminescence centers at 1240 nm in silicon obtained by irradiation of the SiO2/Si system A Nikolskaya, D Korolev, A Mikhaylov, D Pavlov, A Sushkov, E Okulich, ... Journal of Applied Physics 135 (21), 2024 | 2 | 2024 |
| Implanted gallium impurity detection in silicon by impedance spectroscopy D Tetelbaum, A Nikolskaya, M Dorokhin, V Vasiliev, D Smolyakov, ... Materials Letters 308, 131244, 2022 | 2 | 2022 |
