| Recent progress in devices and circuits based on wafer-scale transition metal dichalcogenides H Tang, H Zhang, X Chen, Y Wang, X Zhang, P Cai, W Bao Science China Information Sciences 62, 1-19, 2019 | 23 | 2019 |
| Investigation of Time Dependent Dielectric Breakdown (TDDB) of Hf0.5Zr0.5O2-Based Ferroelectrics Under Both Forward and Reverse Stress Conditions Z Liu, P Cai, S Yu, L Han, R Wang, Y Wu, P Ren, Z Ji, R Huang IEEE Journal of the Electron Devices Society 9, 735-740, 2021 | 13 | 2021 |
| Deep understanding of reliability in Hf-based FeFET during bipolar pulse cycling: trap profiling for read-after-write delay and memory window degradation P Cai, T Zhu, J Duan, Z Sun, H Li, Y Xue, Z Liu, H Xu, L Zhang, X Wang, ... 2022 International Electron Devices Meeting (IEDM), 32.2. 1-32.2. 4, 2022 | 11 | 2022 |
| Investigation of Coercive Field Shift During Cycling in HfZrOₓ Ferroelectric Capacitors P Cai, H Li, Z Liu, T Zhu, M Zeng, Z Ji, Y Wu, A Padovani, L Larcher, ... IEEE Transactions on Electron Devices 69 (5), 2384-2390, 2022 | 11 | 2022 |
| Catching the missing EM consequence in soft breakdown reliability in advanced FinFETs: Impacts of self-heating, on-state TDDB, and layout dependence Z Dong, Z Sun, X Yang, X Li, Y Xue, C Luo, P Cai, Z Wang, S Wang, ... 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2023 | 7 | 2023 |
| A physics-based dynamic compact model of ferroelectric tunnel junctions N Feng, H Li, L Zhang, N Ji, F Zhang, X Zhu, Z Shang, P Cai, M Li, ... IEEE Electron Device Letters 44 (2), 261-264, 2022 | 7 | 2022 |
| Comprehensive study of NBTI and off-state reliabilty in sub-20 nm DRAM technology: trap identification, compact aging model, and impact on retention degradation Z Sun, P Cai, J Song, D Wang, Z Liu, L Zhou, T Zhu, Y Xue, Y Liu, Z Wang, ... 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | 3 | 2023 |
| Metal–Ferroelectric–Semiconductor Tunnel Junction: Essential Physics and Design Explorations N Feng, H Li, B Peng, F Zhang, P Cai, L Zhang, R Wang, R Huang IEEE Transactions on Electron Devices 70 (6), 3382-3389, 2023 | 3 | 2023 |
| Modeling the Coupled Charge Trapping Dynamics in FeFETs for Reliability Characterizations P Cai, H Li, Z Ji, L Zhang, R Wang, R Huang IEEE Transactions on Electron Devices, 2024 | 1 | 2024 |
| Effects of Oxygen Vacancy on Ferroelectric Tunnel Junctions: An Ab initio Study N Ji, N Feng, J Qiu, P Cai, L Zhang, R Wang, R Huang 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2024 | 1 | 2024 |
| New Insights into Read Current Margin and Memory Window of HfO2-based Ferroelectric FET with Re-exploration of the Role of Ferroelectric Dynamics and … C Su, Z Liang, Z Fu, S Xu, K Wang, P Cai, L Chen, R Huang, Q Huang ESSDERC 2023-IEEE 53rd European Solid-State Device Research Conference …, 2023 | 1 | 2023 |
| Step-recovery with Multi-pulse Test (SRMPT) Characterization Technique for the Understanding of Border Traps in Ferroelectric Capacitors Y Wu, Z Liu, M Wu, P Cai, X Wang, J Liu, B Cui, J Wu, Y Wen, R Wang, ... IEEE Electron Device Letters, 2024 | | 2024 |
| A Physics-Based Dynamic Model Of Metal-Ferroelectric-Insulator-Metal Tunnel Junctions N Ji, J Qiu, H Li, X Zhu, Y Li, P Cai, L Zhang, R Wang, R Huang Authorea Preprints, 2024 | | 2024 |
| Study on the Anomalous Characteristics of Random Telegraph Noise in FeFETs P Cai, Y Wu, Z Sun, H Li, X Wang, Z Ji, R Wang, R Huang 2024 IEEE Silicon Nanoelectronics Workshop (SNW), 35-36, 2024 | | 2024 |
| A Compact Model of FTJ Covering the Trapping/De-trapping Charateristics N Feng, N Ji, F Zhang, Y Li, P Cai, H Li, L Zhang, R Wang, R Huang 2023 International Conference on Simulation of Semiconductor Processes and …, 2023 | | 2023 |
| Characterization of Field Cycling Fatigue in HfZrOx Ferroelectric Capacitors P Cai, Z Liu, T Zhu, Z Ji, R Wang, R Huang 2023 China Semiconductor Technology International Conference (CSTIC), 1-3, 2023 | | 2023 |
| New Insights into the Memory Window Estimation in FeFET from a Dynamic Perspective P Cai, H Li, C Su, T Zhu, L Zhang, R Wang, R Huang 2023 Silicon Nanoelectronics Workshop (SNW), 123-124, 2023 | | 2023 |
| Towards the understanding of ferroelectric-intrinsic variability and reliability issues on MCAM Y Wu, P Cai, Z Liu, P Ren, Z Ji 2023 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2023 | | 2023 |
