Giant gauge factor of Van der Waals material based strain sensors W Yan, HR Fuh, Y Lv, KQ Chen, TY Tsai, YR Wu, TH Shieh, KM Hung, J Li, ...
Nature communications 12 (1), 2018, 2021
93 2021 Graphene/SnS2 van der Waals Photodetector with High Photoresponsivity and High Photodetectivity for Broadband 365–2240 nm Detection Y Zhao, TY Tsai, G Wu, C Ó Coileáin, YF Zhao, D Zhang, KM Hung, ...
ACS Applied Materials & Interfaces 13 (39), 47198-47207, 2021
33 2021 Application of localization landscape theory and the k· p model for direct modeling of carrier transport in a type II superlattice InAs/InAsSb photoconductor system TY Tsai, K Michalczewski, P Martyniuk, CH Wu, YR Wu
Journal of Applied Physics 127 (3), 2020
20 2020 Ó Coileáin W Yan, HR Fuh, Y Lv, KQ Chen, TY Tsai, YR Wu, TH Shieh, KM Hung, J Li, ...
C, 0
14 Demonstration of HOT photoresponse of MWIR T2SLs InAs/InAsSb photoresistors K Michalczewski, TY Tsai, PM Martyniuk, CH Wu
Bulletin of the Polish Academy of Sciences, Technical Sciences 67 (1), 2019
11 2019 Carrier localization in III-nitride versus conventional III-V semiconductors: A study on the effects of alloy disorder using landscape theory and the Schrödinger equation TY Tsai, KS Qwah, JP Banon, M Filoche, C Weisbuch, YR Wu, JS Speck
Physical Review Applied 20 (4), 044069, 2023
6 2023 A Thermoelectrically Cooled nBn Type‐II Superlattices InAs/InAsSb/B‐AlAsSb Mid‐Wave Infrared Detector P Martyniuk, K Michalczewski, TY Tsai, CH Wu, YR Wu
physica status solidi (a) 217 (6), 1900522, 2020
6 2020 Theoretical modeling of XBn T2SLs InAs/InAsSb/B-AlSb longwave infrared detector operating under thermoelectrical cooling P Martyniuk, K Michalczewski, TY Tsai, CH Wu, YR Wu
Optical and Quantum Electronics 52, 1-10, 2020
3 2020 Dislocation half-loop control for optimal V-defect density in GaN-based light emitting diodes A Quevedo, F Wu, TY Tsai, JJ Ewing, T Tak, S Gandrothula, S Gee, X Li, ...
Applied Physics Letters 125 (4), 2024
2 2024 Theoretical modelling of XBn T2SLs InAs/InAsSb/B-AlAsSb mid-wave detector operating below thermoelectrical cooling P Martyniuk, K Michalczewski, TY Tsai, CH Wu, YR Wu
Opto-Electronics Review 27 (3), 275-281, 2019
2 2019 Studies of 2D Bulk and Nanoribbon Band Structures in Mox 1–x S2 Alloy System Using Full sp3 d5 Tight‐Binding Model TY Tsai, PF Chen, SW Chang, YR Wu
physica status solidi (b) 258 (2), 2000375, 2021
1 2021 三五族合金之侷限效應與二硫化鉬鎢隨機合金之能帶計算 蔡宗印
國立臺灣大學, 2023
2023 Theoretical simulation of the barrier T2SLs InAs/InAsSb/B-AlSb longwave detector operating under thermoelectrical cooling P Martyniuk, K Michalczewski, TY Tsai, CH Wu, YR Wu
2019 International Conference on Numerical Simulation of Optoelectronic …, 2019
2019 Investigation of Electronic Properties of Mox W1–x S2 Alloy by Tight-binding Method for Interband transition TY Tsai, PF Chen, SW Chang, YR Wu
2019 International Conference on Numerical Simulation of Optoelectronic …, 2019
2019 Thermoelectrically Cooled nBn T2SLs InAs/InAsSb/B-AlAsSb MWIR Detector P Martyniuk, K Michalczewski, TY Tsai, CH Wu, YR Wu
2019 Compound Semiconductor Week (CSW), 1-2, 2019
2019 Investigation of type-II superlattices InAs/InAsSb photoconductor system by YR Wu, TY Tsai, C Wu, K Michalczewski, P Martyniuk
2019 Compound Semiconductor Week (CSW), 1-1, 2019
2019 