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| Dirac-source field-effect transistors as energy-efficient, high-performance electronic switches C Qiu, F Liu, L Xu, B Deng, M Xiao, J Si, L Lin, Z Zhang, J Wang, H Guo, ... Science 361 (6400), 387-392, 2018 | 322 | 2018 |
| Ballistic two-dimensional InSe transistors J Jiang*, L Xu*, C Qiu, LM Peng Nature 616 (7957), 470-475, 2023 | 206 | 2023 |
| Gigahertz integrated circuits based on carbon nanotube films D Zhong, Z Zhang, L Ding, J Han, M Xiao, J Si, L Xu, C Qiu, LM Peng Nature Electronics 1 (1), 40-45, 2018 | 159 | 2018 |
| Sub-10 nm two-dimensional transistors: Theory and experiment R Quhe*, L Xu*, S Liu*, C Yang*, Y Wang, H Li, J Yang, Q Li, B Shi, Y Li, ... Physics Reports 938, 1-72, 2021 | 141 | 2021 |
| Schottky barrier heights in two-dimensional field-effect transistors: from theory to experiment Y Wang, S Liu, Q Li, R Quhe, C Yang, Y Guo, X Zhang, Y Pan, J Li, ... Reports on Progress in Physics 84 (5), 056501, 2021 | 141 | 2021 |
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| Excellent device performance of sub‐5‐nm monolayer tellurene transistors J Yan, H Pang, L Xu, J Yang, R Quhe, X Zhang, Y Pan, B Shi, S Liu, L Xu, ... Advanced Electronic Materials 5 (7), 1900226, 2019 | 81 | 2019 |
| Computational event-driven vision sensors for in-sensor spiking neural networks Y Zhou, J Fu, Z Chen, F Zhuge, Y Wang, J Yan, S Ma, L Xu, H Yuan, ... Nature Electronics 6 (11), 870-878, 2023 | 77 | 2023 |
| Sub-5 nm Monolayer MoS2 Transistors toward Low-Power Devices H Zhang, B Shi, L Xu, J Yan, W Zhao, Z Zhang, Z Zhang, J Lu ACS Applied Electronic Materials 3 (4), 1560-1571, 2021 | 77 | 2021 |
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| Ohmic contacts between monolayer WSe2 and two-dimensional titanium carbides Q Li, J Yang, R Quhe, Q Zhang, L Xu, Y Pan, M Lei, J Lu Carbon 135, 125-133, 2018 | 63 | 2018 |
| Can carbon nanotube transistors be scaled down to the sub-5 nm gate length? L Xu, J Yang, C Qiu, S Liu, W Zhou, Q Li, B Shi, J Ma, C Yang, J Lu, ... ACS Applied Materials & Interfaces 13 (27), 31957-31967, 2021 | 56 | 2021 |
| Sub-5-nm monolayer silicane transistor: A first-principles quantum transport simulation Y Pan, J Dai, L Xu, J Yang, X Zhang, J Yan, J Li, B Shi, S Liu, H Hu, M Wu, ... Physical Review Applied 14 (2), 024016, 2020 | 54 | 2020 |
| Performance limit of monolayer WSe2 transistors; significantly outperform their MoS2 counterpart X Sun*, L Xu*, Y Zhang, W Wang, S Liu, C Yang, Z Zhang, J Lu ACS applied materials & interfaces 12 (18), 20633-20644, 2020 | 51 | 2020 |
| Enhancement‐mode field‐effect transistors and high‐speed integrated circuits based on aligned carbon nanotube films Y Lin, S Liang, L Xu, L Liu, Q Hu, C Fan, Y Liu, J Han, Z Zhang, LM Peng Advanced Functional Materials 32 (11), 2104539, 2022 | 48 | 2022 |
| Advances in high‐performance carbon‐nanotube thin‐film electronics J Si, L Xu, M Zhu, Z Zhang, LM Peng Advanced Electronic Materials 5 (8), 1900122, 2019 | 45 | 2019 |
| Lowering interface state density in carbon nanotube thin film transistors through using stacked Y2O3/HfO2 gate dielectric L Xu, N Gao, Z Zhang, LM Peng Applied Physics Letters 113 (8), 2018 | 43 | 2018 |
| Insight into ballisticity of room-temperature carrier transport in carbon nanotube field-effect transistors L Xu, C Qiu, C Zhao, Z Zhang, LM Peng IEEE Transactions on Electron Devices 66 (8), 3535-3540, 2019 | 37 | 2019 |
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