Topology-engineered orbital Hall effect in two-dimensional ferromagnets Z Chen, R Li, Y Bai, N Mao, M Zeer, D Go, Y Dai, B Huang, Y Mokrousov, ...
Nano letters 24 (16), 4826-4833, 2024
18 2024 Tunable second-order topological insulators in Chern insulators 2H-FeX2 (X= Cl and Br) X Feng, L Cai, Z Chen, Y Dai, B Huang, C Niu
Applied Physics Letters 122 (19), 2023
14 2023 Magnetic topological insulators with switchable edge and corner states in monolayer X Wu, Z Chen, Y Bai, B Huang, Y Dai, C Niu
Physical Review B 109 (23), 235407, 2024
6 2024 Coupled electronic and magnonic topological states in two-dimensional ferromagnets Y Bai, L Zhang, N Mao, R Li, Z Chen, Y Dai, B Huang, C Niu
ACS nano 18 (20), 13377-13383, 2024
5 2024 Layer-coupled corner states in two-dimensional topological multiferroics R Li, X Zou, Y Bai, Z Chen, B Huang, Y Dai, C Niu
Materials Horizons 11 (9), 2242-2247, 2024
5 2024 Engineering gapless edge states from antiferromagnetic Chern homobilayer X Zou, R Li, Z Chen, Y Dai, B Huang, C Niu
Nano Letters 24 (1), 450-457, 2023
5 2023 Manipulating corner states without topological phase transition in two-dimensional intrinsic triferroic materials X Feng, R Li, Z Chen, Y Dai, B Huang, C Niu
Physical Review B 109 (16), 165308, 2024
1 2024 Floquet engineering of the orbital Hall effect and valleytronics in two-dimensional topological magnets R Li, X Zou, Z Chen, X Feng, B Huang, Y Dai, C Niu
Materials Horizons 11 (16), 3819-3824, 2024
1 2024 A mixed Weyl semimetal in a two-dimensional ferromagnetic BaCrSe 2 monolayer B Yuan, W Sun, Y Bai, Z Chen, B Huang, Y Dai, C Niu
Journal of Materials Chemistry C 12 (1), 296-300, 2024
1 2024