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Mohammad Adnaan
Mohammad Adnaan
Process Development Engineer, Texas Instruments, PhD, Georgia Institute of Technology
gatech.edu üzerinde doğrulanmış e-posta adresine sahip - Ana Sayfa
Başlık
Alıntı yapanlar
Alıntı yapanlar
Yıl
First-principles calculation of the optoelectronic properties of doped methylammonium lead halide perovskites: A DFT-based study
NM Rahman, M Adnaan, D Adhikary, M Islam, MK Alam
Computational Materials Science 150, 439-447, 2018
282018
Design Considerations for sub-1V 1T1C FeRAM memory circuits
M Adnaan, SC Chang, H Li, YC Liao, IA Young, A Naeemi
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2024
22024
A Compact Model for Ferroelectric Capacitors Based on Multidomain Phase-Field Framework
M Adnaan, SC Chang, H Li, D Nikonov, IA Young, A Naeemi
IEEE Transactions on Electron Devices 70 (7), 3523-3529, 2023
22023
Cross-layer Modeling and Design of Content Addressable Memories in Advanced Technology Nodes for Similarity Search
S Narla, P Kumar, M Adnaan, A Naeemi
IEEE Transactions on Electron Devices 72 (1), 240-246, 2024
12024
Compact physical model for ferroelectric / antiferroelectric / dielectric mixed phase capacitors
M Adnaan, MM Islam, SC Chang, H Li, IA Young, A Naeemi
IEEE Electron Device Letters 45 (2), 280-283, 2023
12023
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