| Reliability Improvement and Effective Switching Layer Model of Thin‐Film MoS2 Memristors Y Huang, Y Gu, S Mohan, A Dolocan, ND Ignacio, S Kutagulla, ... Advanced Functional Materials 34 (15), 2214250, 2024 | 29 | 2024 |
| Sulfurization Engineering of One‐Step Low‐Temperature MoS2 and WS2 Thin Films for Memristor Device Applications Y Gu, MI Serna, S Mohan, A Londoño‐Calderon, T Ahmed, Y Huang, ... Advanced Electronic Materials 8 (2), 2100515, 2022 | 28 | 2022 |
| Direct Metal-Free Growth and Dry Separation of Bilayer Graphene on Sapphire: Implications for Electronic Applications S Mohan, D Kireev, S Kutagulla, N Ignacio, Y Gu, H Celio, X Zhan, ... ACS Applied Nano Materials 6 (20), 19018-19028, 2023 | 7 | 2023 |
| Local stress analysis of partial dislocation interactions with symmetrical-tilt grain boundaries containing E-structural units S Mohan, R Li, HB Chew Philosophical Magazine 98 (25), 2345-2366, 2018 | 7 | 2018 |
| Programmable Retention Characteristics in MoS2-Based Atomristors for Neuromorphic and Reservoir Computing Systems Y Lee, Y Huang, YF Chang, SJ Yang, ND Ignacio, S Kutagulla, S Mohan, ... ACS nano, 2024 | 4 | 2024 |
| Partial dislocations interactions with symmetrical-tilt grain boundaries containing e-structural units: Local stress analysis with molecular dynamics S Mohan University of Illinois at Urbana-Champaign, 2018 | | 2018 |
| High Quality Growth and Transfer of Bilayer Graphene on Sapphire A Hall, S Mohan, Y Gu, D Kireev, D Akinwande, K Liechti | | |