Fatigue mechanism of yttrium-doped hafnium oxide ferroelectric thin films fabricated by pulsed laser deposition F Huang, X Chen, X Liang, J Qin, Y Zhang, T Huang, Z Wang, B Peng, ...
Physical Chemistry Chemical Physics 19 (5), 3486-3497, 2017
115 2017 The magnetic proximity effect and electrical field tunable valley degeneracy in MoS 2/EuS van der Waals heterojunctions X Liang, L Deng, F Huang, T Tang, C Wang, Y Zhu, J Qin, Y Zhang, ...
Nanoscale 9 (27), 9502-9509, 2017
82 2017 HfO2 -Based Highly Stable Radiation-Immune Ferroelectric Memory F Huang, Y Wang, X Liang, J Qin, Y Zhang, X Yuan, Z Wang, B Peng, ...
IEEE Electron Device Letters 38 (3), 330-333, 2017
52 2017 Enhanced Second Harmonic Generation from Ferroelectric HfO2 -Based Hybrid Metasurfaces J Qin, F Huang, X Li, L Deng, T Kang, A Markov, F Yue, Y Chen, X Wen, ...
ACS nano 13 (2), 1213-1222, 2019
48 2019 Proton Radiation Effects on Y-Doped HfO2 -Based Ferroelectric Memory Y Wang, F Huang, Y Hu, R Cao, T Shi, Q Liu, L Bi, M Liu
IEEE Electron Device Letters 39 (6), 823-826, 2018
34 2018 Study of the phase evolution, metal-insulator transition, and optical properties of vanadium oxide thin films T Huang, L Yang, J Qin, F Huang, X Zhu, P Zhou, B Peng, H Duan, ...
Optical Materials Express 6 (11), 3609-3621, 2016
31 2016 Magnetic Proximity Effect and Anomalous Hall Effect in X Liang, G Shi, L Deng, F Huang, J Qin, T Tang, C Wang, B Peng, C Song, ...
Physical Review Applied 10 (2), 024051, 2018
20 2018 Field‐Induced Ferroelectric Phase Evolution During Polarization “Wake‐Up” in Hf0.5 Zr0.5 O2 Thin Film Capacitors B Saini, F Huang, YY Choi, Z Yu, V Thampy, JD Baniecki, W Tsai, ...
Advanced Electronic Materials 9 (6), 2300016, 2023
16 2023 CeO2 Doping of Hf0.5 Zr0.5 O2 Thin Films for High Endurance Ferroelectric Memories Z Yu, B Saini, PJ Liao, YK Chang, DH Hou, CH Nien, YC Shih, SH Yeong, ...
Advanced Electronic Materials 8 (7), 2101258, 2022
14 2022 Active macroscale visible plasmonic nanorod self-assembled monolayer Y Li, J Li, T Huang, F Huang, J Qin, L Bi, J Xie, L Deng, B Peng
Photonics Research 6 (5), 409-416, 2018
12 2018 Measurement of Ferroelectric Properties of Nanometer Scaled Individual Metal/Hf0.5 Zr0.5 O2 /Metal Capacitors F Huang, M Passlack, Z Yu, Q Lin, A Babadi, VDH Hou, PC McIntyre, ...
IEEE Electron Device Letters 43 (2), 212-215, 2021
11 2021 First Observation of Ultra-high Polarization (~ 108 μC/cm²) in Nanometer Scaled High Performance Ferroelectric HZO Capacitors with Mo Electrodes F Huang, B Saini, L Wan, H Lu, X He, S Qin, W Tsai, A Gruverman, ...
2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2023
9 2023 Enhanced Switching Reliability of Hf0.5 Zr0.5 O2 Ferroelectric Films Induced by Interface Engineering F Huang, B Saini, Z Yu, C Yoo, V Thampy, X He, JD Baniecki, W Tsai, ...
ACS Applied Materials & Interfaces 15 (43), 50246-50253, 2023
8 2023 Nanocrystallite seeding of metastable ferroelectric phase formation in atomic layer-deposited Hafnia–Zirconia alloys Z Yu, B Saini, Y Liu, F Huang, A Mehta, JD Baniecki, HSP Wong, W Tsai, ...
ACS Applied Materials & Interfaces 14 (47), 53057-53064, 2022
8 2022 4 bits/cell hybrid 1F1R for high density embedded non-volatile memory and its application for compute in memory WC Chen, F Huang, S Qin, Z Yu, Q Lin, PC McIntyre, SS Wong, ...
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022
5 2022 Dimensional scaling of ferroelectric properties of hafnia-zirconia thin films: Electrode interface effects F Huang, B Saini, L Wan, H Lu, X He, S Qin, W Tsai, A Gruverman, ...
ACS nano 18 (27), 17600-17610, 2024
2 2024 Multi-gate FeFET Discriminates Spatiotemporal Pulse Sequences for Dendrocentric Learning HJY Chen, M Beauchamp, K Toprasertpong, F Huang, L Le Coeur, ...
2023 International Electron Devices Meeting (IEDM), 1-4, 2023
2 2023 Mechanism of polarization “Wake-Up” in ferroelectric Hafnia-Zirconia thin films B Saini, F Huang, YY Choi, Z Yu, JD Baniecki, V Thampy, W Tsai, ...
Solid-State Electronics 208, 108714, 2023
2 2023 CeO2 -Doped Hf0.5 Zr0.5 O2 Ferroelectrics for High Endurance Embedded Memory Applications Z Yu, B Saini, PJ Liao, YK Chang, V Hou, CH Nien, YC Shih, SH Yeong, ...
2022 International Symposium on VLSI Technology, Systems and Applications …, 2022
2 2022 CeO</sub> 2<//sub> Doping of Hf</sub> 0.5<//sub> Zr</sub> 0.5<//sub> O</sub> 2<//sub> Thin Films for High Endurance Ferroelectric Memories Z Yu, B Saini, PJ Liao, YK Chang, DH Hou, CH Nien, YC Shih, SH Yeong, ...
Advanced Electronic Materials 8 (7), 2022
2022 
Bo Peng(1) University of Electronic Science and Technology of China (2) NUS (3) NTUuestc.edu.cn üzerinde doğrulanmış e-posta adresine sahip