| State of the art and future perspectives in advanced CMOS technology HH Radamson, H Zhu, Z Wu, X He, H Lin, J Liu, J Xiang, Z Kong, W Xiong, ... Nanomaterials 10 (8), 1555, 2020 | 198 | 2020 |
| Miniaturization of CMOS HH Radamson, X He, Q Zhang, J Liu, H Cui, J Xiang, Z Kong, W Xiong, ... Micromachines 10 (5), 293, 2019 | 127 | 2019 |
| The challenges of advanced CMOS process from 2D to 3D HH Radamson, Y Zhang, X He, H Cui, J Li, J Xiang, J Liu, S Gu, G Wang Applied Sciences 7 (10), 1047, 2017 | 87 | 2017 |
| Review of Si-based GeSn CVD growth and optoelectronic applications Y Miao, G Wang, Z Kong, B Xu, X Zhao, X Luo, H Lin, Y Dong, B Lu, ... Nanomaterials 11 (10), 2556, 2021 | 71 | 2021 |
| Double-balanced graphene integrated mixer with outstanding linearity H Lyu, H Wu, J Liu, Q Lu, J Zhang, X Wu, J Li, T Ma, J Niu, W Ren, ... Nano letters 15 (10), 6677-6682, 2015 | 43 | 2015 |
| FOI FinFET with ultra-low parasitic resistance enabled by fully metallic source and drain formation on isolated bulk-fin Q Zhang, H Yin, J Luo, H Yang, L Meng, Y Li, Z Wu, Y Zhang, Y Zhang, ... 2016 IEEE International Electron Devices Meeting (IEDM), 17.3. 1-17.3. 4, 2016 | 41 | 2016 |
| Deep-submicron Graphene Field-Effect Transistors with State-of-Art fmax H Lyu, Q Lu, J Liu, X Wu, J Zhang, J Li, J Niu, Z Yu, H Wu, H Qian Scientific reports 6 (1), 35717, 2016 | 35 | 2016 |
| Integration of highly strained SiGe in source and drain with HK and MG for 22 nm bulk PMOS transistors G Wang, J Luo, C Qin, R Liang, Y Xu, J Liu, J Li, H Yin, J Yan, H Zhu, J Xu, ... Nanoscale Research Letters 12, 1-7, 2017 | 32 | 2017 |
| CMOS Scaling for the 5 nm Node and Beyond: Device, Process and Technology HH Radamson, Y Miao, Z Zhou, Z Wu, Z Kong, J Gao, H Yang, Y Ren, ... Nanomaterials 14 (10), 837, 2024 | 26 | 2024 |
| High carrier mobility in suspended-channel graphene field effect transistors H Lv, H Wu, J Liu, J Yu, J Niu, J Li, Q Xu, X Wu, H Qian Applied Physics Letters 103 (19), 2013 | 24 | 2013 |
| Defect engineering for shallow n‐type junctions in germanium: Facts and fiction E Simoen, M Schaekers, J Liu, J Luo, C Zhao, K Barla, N Collaert physica status solidi (a) 213 (11), 2799-2808, 2016 | 23 | 2016 |
| Reduction of NiGe/n-and p-Ge specific contact resistivity by enhanced dopant segregation in the presence of carbon during nickel germanidation N Duan, J Luo, G Wang, J Liu, E Simoen, S Mao, H Radamson, X Wang, ... IEEE Transactions on Electron Devices 63 (11), 4546-4549, 2016 | 17 | 2016 |
| Undoped strained Ge quantum well with ultrahigh mobility of two million Z Kong, Z Li, G Cao, J Su, Y Zhang, J Liu, J Liu, Y Ren, H Li, L Wei, G Guo, ... ACS Applied Materials & Interfaces 15 (23), 28799-28805, 2023 | 16 | 2023 |
| A polarization-switching, charge-trapping, modulated arithmetic logic unit for in-memory computing based on ferroelectric fin field-effect transistors Z Zhang, Y Luo, Y Cui, H Yang, Q Zhang, G Xu, Z Wu, J Xiang, Q Liu, ... ACS Applied Materials & Interfaces 14 (5), 6967-6976, 2022 | 16 | 2022 |
| pMOSFETs Featuring ALD W Filling Metal Using SiH4 and B2H6 Precursors in 22 nm Node CMOS Technology G Wang, J Luo, J Liu, T Yang, Y Xu, J Li, H Yin, J Yan, H Zhu, C Zhao, ... Nanoscale Research Letters 12, 1-6, 2017 | 16 | 2017 |
| Inverted process for graphene integrated circuits fabrication H Lv, H Wu, J Liu, C Huang, J Li, J Yu, J Niu, Q Xu, Z Yu, H Qian Nanoscale 6 (11), 5826-5830, 2014 | 16 | 2014 |
| Ion-implanted TiN metal gate with dual band-edge work function and excellent reliability for advanced CMOS device applications Q Xu, G Xu, H Zhou, H Zhu, Q Liang, J Liu, J Li, J Xiang, M Xu, J Zhong, ... IEEE Transactions on Electron Devices 62 (12), 4199-4205, 2015 | 13 | 2015 |
| Improving driving current with high-efficiency landing pads technique for reduced parasitic resistance in gate-all-around Si nanosheet devices J Tian, Y He, Q Zhang, C Wu, L Cao, J Yao, S Mao, Y Luo, Z Zhang, Y Li, ... ECS Journal of Solid State Science and Technology 11 (3), 035010, 2022 | 12 | 2022 |
| Growth of SiGe layers in source and drain regions for 10 nm node complementary metal-oxide semiconductor (CMOS) G Wang, M Kolahdouz, J Luo, C Qin, S Gu, Z Kong, X Yin, W Xiong, ... Journal of Materials Science: Materials in Electronics 31, 26-33, 2020 | 12 | 2020 |
| Planar bulk MOSFETs with self-aligned pocket well to improve short-channel effects and enhance device performance Y Zhang, H Zhu, H Wu, Y Zhang, Z Zhao, J Zhong, H Yang, Q Liang, ... IEEE Transactions on Electron Devices 62 (5), 1411-1418, 2015 | 12 | 2015 |
