Steffen Breuer

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Finansman sağlayan kuruluşun getirdiği zorunluluğa dayalı olarak

Katkıda bulunan yazarlar

Martin SchellInstitute Head, Fraunhofer HHI, Berlin, Germanyhhi.fraunhofer.de üzerinde doğrulanmış e-posta adresine sahip
Simon NellenFraunhofer HHIhhi.fraunhofer.de üzerinde doğrulanmış e-posta adresine sahip
Björn GlobischEagleyard Photonics GmbHtoptica-eagleyard.com üzerinde doğrulanmış e-posta adresine sahip
Henning RiechertDirector, Paul-Drude-Institut für Festkörperelektronikpdi-berlin.de üzerinde doğrulanmış e-posta adresine sahip
Chennupati JagadishAustralian National Universityanu.edu.au üzerinde doğrulanmış e-posta adresine sahip
Milan DeumerFraunhofer Heinrich Hertz Institutehhi.fraunhofer.de üzerinde doğrulanmış e-posta adresine sahip
H Hoe TanProfessor, The Australian National Universityanu.edu.au üzerinde doğrulanmış e-posta adresine sahip
Jennifer Wong-LeungAssociate Professor, Australian National Universityanu.edu.au üzerinde doğrulanmış e-posta adresine sahip
Oliver BrandtSenior scientist, Paul-Drude-Institut für Festkörperelektronikpdi-berlin.de üzerinde doğrulanmış e-posta adresine sahip
Maria HilseThe Pennsylvania State Universitypsu.edu üzerinde doğrulanmış e-posta adresine sahip
Qiang (Michael) GaoFellow, Dept Electronic Materials Engineering, The Australian National Universityanu.edu.au üzerinde doğrulanmış e-posta adresine sahip
Carsten PfüllerPost Doc, Paul-Drude-Institutpdi-berlin.de üzerinde doğrulanmış e-posta adresine sahip
Ullrich PietschProfessor of solid state physics, University of Siegenphysik.uni-siegen.de üzerinde doğrulanmış e-posta adresine sahip
Patrick ParkinsonUniversity of Manchestermanchester.ac.uk üzerinde doğrulanmış e-posta adresine sahip
W. Ted MasselinkHumboldt University Berlinphysik.hu-berlin.de üzerinde doğrulanmış e-posta adresine sahip
Nian JiangDepartment of Electronic Materials Engineeringanu.edu.au üzerinde doğrulanmış e-posta adresine sahip
Jonas LähnemannWissenschaftlicher Mitarbeiter, Paul-Drude-Institut für Festkörperelektronikpdi-berlin.de üzerinde doğrulanmış e-posta adresine sahip
Holger T. GrahnPaul-Drude-Institut für Festkörperelektronikpdi-berlin.de üzerinde doğrulanmış e-posta adresine sahip
Lan FUProfessor, The Australian National Universityanu.edu.au üzerinde doğrulanmış e-posta adresine sahip
Rudiger (Rüdiger) QuayFraunhofer IAF, Albert Ludwigs Universität Freiburgieee.org üzerinde doğrulanmış e-posta adresine sahip

Takip et

Steffen Breuer

Epitaxy Scientist, Fraunhofer HHI, Berlin

hhi.fraunhofer.de üzerinde doğrulanmış e-posta adresine sahip - Ana Sayfa

III-V Semiconductor Epitaxy GaN Electronics InP Optoelectronics Terahertz Photoconductors Quantum Dot Comb Lasers


Başlık Alıntılara göre sırala Yıla göre sırala Başlığa göre sırala	Alıntı yapanlar Alıntı yapanlar	Yıl
Suitability of Au-and self-assisted GaAs nanowires for optoelectronic applications S Breuer, C Pfuller, T Flissikowski, O Brandt, HT Grahn, L Geelhaar, ... Nano letters 11 (3), 1276-1279, 2011	251	2011
Luminescence of GaAs nanowires consisting of wurtzite and zinc-blende segments U Jahn, J Lähnemann, C Pfüller, O Brandt, S Breuer, B Jenichen, ... Physical Review B—Condensed Matter and Materials Physics 85 (4), 045323, 2012	150	2012
Enhanced minority carrier lifetimes in GaAs/AlGaAs core–shell nanowires through shell growth optimization N Jiang, Q Gao, P Parkinson, J Wong-Leung, S Mokkapati, S Breuer, ... Nano letters 13 (11), 5135-5140, 2013	125	2013
Self-assisted nucleation and vapor–solid growth of InAs nanowires on bare Si (111) E Dimakis, J Lähnemann, U Jahn, S Breuer, M Hilse, L Geelhaar, ... Crystal Growth & Design 11 (9), 4001-4008, 2011	120	2011
Long minority carrier lifetime in Au-catalyzed GaAs/AlxGa1− xAs core-shell nanowires N Jiang, P Parkinson, Q Gao, S Breuer, HH Tan, J Wong-Leung, ... Applied Physics Letters 101 (2), 2012	118	2012
Optoelectronic frequency-modulated continuous-wave terahertz spectroscopy with 4 THz bandwidth L Liebermeister, S Nellen, RB Kohlhaas, S Lauck, M Deumer, S Breuer, ... Nature Communications 12 (1), 1071, 2021	116	2021
Incorporation of the dopants Si and Be into GaAs nanowires M Hilse, M Ramsteiner, S Breuer, L Geelhaar, H Riechert Applied Physics Letters 96 (19), 2010	107	2010
Twinning superlattice formation in GaAs nanowires T Burgess, S Breuer, P Caroff, J Wong-Leung, Q Gao, H Hoe Tan, ... ACS nano 7 (9), 8105-8114, 2013	103	2013
Band gap of wurtzite GaAs: A resonant Raman study P Kusch, S Breuer, M Ramsteiner, L Geelhaar, H Riechert, S Reich Physical Review B—Condensed Matter and Materials Physics 86 (7), 075317, 2012	93	2012
637 μW emitted terahertz power from photoconductive antennas based on rhodium doped InGaAs RB Kohlhaas, S Breuer, L Liebermeister, S Nellen, M Deumer, M Schell, ... Applied Physics Letters 117 (13), 2020	84	2020
Acoustically driven photon antibunching in nanowires A Hernández-Mínguez, M Möller, S Breuer, C Pfüller, C Somaschini, ... Nano letters 12 (1), 252-258, 2012	68	2012
Ultra-fast, high-bandwidth coherent cw THz spectrometer for non-destructive testing L Liebermeister, S Nellen, R Kohlhaas, S Breuer, M Schell, B Globisch Journal of Infrared, Millimeter, and Terahertz Waves 40, 288-296, 2019	67	2019
Photoconductive terahertz detectors with 105 dB peak dynamic range made of rhodium doped InGaAs RB Kohlhaas, S Breuer, S Nellen, L Liebermeister, M Schell, MP Semtsiv, ... Applied Physics Letters 114 (22), 2019	66	2019
Ferromagnet-semiconductor nanowire coaxial heterostructures grown by molecular-beam epitaxy M Hilse, Y Takagaki, J Herfort, M Ramsteiner, C Herrmann, S Breuer, ... Applied Physics Letters 95 (13), 2009	51	2009
Vapor-liquid-solid nucleation of GaAs on Si (111): Growth evolution from traces to nanowires S Breuer, M Hilse, A Trampert, L Geelhaar, H Riechert Physical Review B—Condensed Matter and Materials Physics 82 (7), 075406, 2010	50	2010
Three-dimensional in situ photocurrent mapping for nanowire photovoltaics P Parkinson, YH Lee, L Fu, S Breuer, HH Tan, C Jagadish Nano letters 13 (4), 1405-1409, 2013	45	2013
Electronic properties of wurtzite GaAs: A correlated structural, optical, and theoretical analysis of the same polytypic GaAs nanowire A Senichev, P Corfdir, O Brandt, M Ramsteiner, S Breuer, J Schilling, ... Nano Research 11, 4708-4721, 2018	43	2018
AlN/GaN HEMTs grown by MBE and MOCVD: Impact of Al distribution BJ Godejohann, E Ture, S Müller, M Prescher, L Kirste, R Aidam, ... physica status solidi (b) 254 (8), 1600715, 2017	42	2017
Strain accommodation in Ga-assisted GaAs nanowires grown on silicon (111) A Biermanns, S Breuer, A Trampert, A Davydok, L Geelhaar, U Pietsch Nanotechnology 23 (30), 305703, 2012	42	2012
Continuous wave terahertz receivers with 4.5 THz bandwidth and 112 dB dynamic range M Deumer, S Breuer, R Kohlhaas, S Nellen, L Liebermeister, S Lauck, ... Optics Express 29 (25), 41819-41826, 2021	40	2021

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