Effective passivation of AlGaN/GaN HEMTs by ALD-grown AlN thin film S Huang, Q Jiang, S Yang, C Zhou, KJ Chen
IEEE Electron Device Letters 33 (4), 516-518, 2012
300 2012 Vertical leakage/breakdown mechanisms in AlGaN/GaN-on-Si devices C Zhou, Q Jiang, S Huang, KJ Chen
IEEE Electron Device Letters 33 (8), 1132-1134, 2012
226 2012 Integrated HEMT and lateral field-effect rectifier combinations, methods, and systems J Chen, C Wanjun, Z Chunhua
US Patent 8,076,699, 2011
208 2011 Enhancement‐mode AlGaN/GaN HEMT and MIS‐HEMT technology KJ Chen, C Zhou
Physica status solidi (a) 208 (2), 434-438, 2011
206 2011 Physics of fluorine plasma ion implantation for GaN normally-off HEMT technology KJ Chen, L Yuan, MJ Wang, H Chen, S Huang, Q Zhou, C Zhou, BK Li, ...
2011 International Electron Devices Meeting, 19.4. 1-19.4. 4, 2011
100 2011 Impact of substrate bias polarity on buffer-related current collapse in AlGaN/GaN-on-Si power devices S Yang, C Zhou, S Han, J Wei, K Sheng, KJ Chen
IEEE Transactions on Electron Devices 64 (12), 5048-5056, 2017
94 2017 Investigation of buffer traps in AlGaN/GaN-on-Si devices by thermally stimulated current spectroscopy and back-gating measurement S Yang, C Zhou, Q Jiang, J Lu, B Huang, KJ Chen
Applied physics letters 104 (1), 2014
73 2014 GaN smart power IC technology KY Wong, W Chen, X Liu, C Zhou, KJ Chen
physica status solidi (b) 247 (7), 1732-1734, 2010
56 2010 AlGaN/GaN MISHEMTs With High- S Yang, S Huang, H Chen, C Zhou, Q Zhou, M Schnee, QT Zhao, ...
IEEE Electron Device Letters 33 (7), 979-981, 2012
55 2012 Substrate-coupled cross-talk effects on an AlGaN/GaN-on-Si smart power IC platform Q Jiang, Z Tang, C Zhou, S Yang, KJ Chen
IEEE Transactions on Electron Devices 61 (11), 3808-3813, 2014
52 2014 Schottky-ohmic drain AlGaN/GaN normally off HEMT with reverse drain blocking capability C Zhou, W Chen, EL Piner, KJ Chen
IEEE electron device letters 31 (7), 668-670, 2010
51 2010 GaN: A Reliable Future in Power Conversion: Dramatic performance improvements at a lower cost A Lidow, J Strydom, R Strittmatter, C Zhou
IEEE Power Electronics Magazine 2 (1), 20-26, 2015
48 2015 Schottky source/drain InAlN/AlN/GaN MISHEMT with enhanced breakdown voltage Q Zhou, H Chen, C Zhou, ZH Feng, SJ Cai, KJ Chen
IEEE electron device letters 33 (1), 38-40, 2011
44 2011 High breakdown voltage 4H-SiC MESFETs with floating metal strips J Zhang, Y Ye, C Zhou, X Luo, B Zhang, Z Li
Microelectronic Engineering 85 (1), 89-92, 2008
43 2008 Transistors and rectifiers utilizing hybrid electrodes and methods of fabricating the same J Chen, Z Chunhua
US Patent 8,564,020, 2013
39 2013 Vertical leakage/breakdown mechanisms in AlGaN/GaN-on-Si structures C Zhou, Q Jiang, S Huang, KJ Chen
2012 24th International Symposium on Power Semiconductor Devices and ICs …, 2012
35 2012 Normally-off III-nitride metal-2DEG tunnel junction field-effect transistors J Chen, L Yuan, H Chen, Z Chunhua
US Patent 8,809,987, 2014
34 2014 Enhancement mode gallium nitride transistor reliability R Strittmatter, C Zhou, A Lidow, Y Ma
2015 IEEE Applied Power Electronics Conference and Exposition (APEC), 1409-1413, 2015
23 2015 ON-state critical gate overdrive voltage for fluorine-implanted enhancement-mode AlGaN/GaN high electron mobility transistors C Ma, H Chen, C Zhou, S Huang, L Yuan, J Roberts, K Chen
Journal of applied physics 110 (11), 2011
23 2011 Enhancement mode gallium nitride transistor reliability A Lidow, R Strittmatter, C Zhou, Y Ma
2015 IEEE International Reliability Physics Symposium, 2E. 1.1-2E. 1.5, 2015
22 2015 