Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon PA Stolk, HJ Gossmann, DJ Eaglesham, DC Jacobson, CS Rafferty, ...
Journal of Applied Physics 81 (9), 6031-6050, 1997
906 1997 Size effects in the structural phase transition of VO2 nanoparticles R Lopez, TE Haynes, LA Boatner, LC Feldman, RF Haglund Jr
Physical Review B 65 (22), 224113, 2002
454 2002 Efficient production of silicon-on-insulator films by co-implantation of He+ with H+ A Agarwal, TE Haynes, VC Venezia, OW Holland, DJ Eaglesham
Applied Physics Letters 72 (9), 1086-1088, 1998
433 1998 Mechanism of silicon exfoliation induced by hydrogen/helium co-implantation MK Weldon, M Collot, YJ Chabal, VC Venezia, A Agarwal, TE Haynes, ...
Applied Physics Letters 73 (25), 3721-3723, 1998
365 1998 Photoinduced phase transition in VO2 nanocrystals: ultrafast control of surface-plasmon resonance M Rini, A Cavalleri, RW Schoenlein, R López, LC Feldman, ...
Optics letters 30 (5), 558-560, 2005
254 2005 Synthesis and characterization of size-controlled vanadium dioxide nanocrystals in a fused silica matrix R Lopez, LA Boatner, TE Haynes, LC Feldman, RF Haglund Jr
Journal of applied physics 92 (7), 4031-4036, 2002
212 2002 Study of the effect of ion implantation on the electrical and microstructural properties of tin‐doped indium oxide thin films Y Shigesato, DC Paine, TE Haynes
Journal of applied physics 73 (8), 3805-3811, 1993
160 1993 A study of the Au/Ni ohmic contact on D Qiao, LS Yu, SS Lau, JY Lin, HX Jiang, TE Haynes
Journal of Applied Physics 88 (7), 4196-4200, 2000
138 2000 Temperature-controlled surface plasmon resonance in VO2 nanorods R Lopez, TE Haynes, LA Boatner, LC Feldman, RF Haglund Jr
Optics letters 27 (15), 1327-1329, 2002
131 2002 Enhanced hysteresis in the semiconductor-to-metal phase transition of R Lopez, LA Boatner, TE Haynes, RF Haglund Jr, LC Feldman
Applied Physics Letters 79 (19), 3161-3163, 2001
127 2001 Implant damage and transient enhanced diffusion in Si DJ Eaglesham, PA Stolk, HJ Gossmann, TE Haynes, JM Poate
Ion Beam Modification of Materials 106, 191-197, 1996
117 1996 Reduction of transient diffusion from 1–5 keV A Agarwal, HJ Gossmann, DJ Eaglesham, L Pelaz, DC Jacobson, ...
Applied physics letters 71 (21), 3141-3143, 1997
113 1997 Interactions of ion‐implantation‐induced interstitials with boron at high concentrations in silicon TE Haynes, DJ Eaglesham, PA Stolk, HJ Gossmann, DC Jacobson, ...
Applied physics letters 69 (10), 1376-1378, 1996
112 1996 The interstitial fraction of diffusivity of common dopants in Si HJ Gossmann, TE Haynes, PA Stolk, DC Jacobson, GH Gilmer, JM Poate, ...
Applied physics letters 71 (26), 3862-3864, 1997
106 1997 Electrical properties of heteroepitaxial grown tin‐doped indium oxide films N Taga, H Odaka, Y Shigesato, I Yasui, M Kamei, TE Haynes
Journal of applied physics 80 (2), 978-984, 1996
105 1996 Comparative study of implantation‐induced damage in GaAs and Ge: Temperature and flux dependence TE Haynes, OW Holland
Applied physics letters 59 (4), 452-454, 1991
105 1991 Boron-enhanced diffusion of boron from ultralow-energy ion implantation A Agarwal, HJ Gossmann, DJ Eaglesham, SB Herner, AT Fiory, ...
Applied Physics Letters 74 (17), 2435-2437, 1999
103 1999 Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon VC Venezia, TE Haynes, A Agarwal, L Pelaz, HJ Gossmann, ...
Applied physics letters 74 (9), 1299-1301, 1999
94 1999 Depth profiling of vacancy clusters in MeV-implanted Si using Au labeling VC Venezia, DJ Eaglesham, TE Haynes, A Agarwal, DC Jacobson, ...
Applied physics letters 73 (20), 2980-2982, 1998
88 1998 Optical nonlinearities in VO2 nanoparticles and thin films R Lopez, RF Haglund, LC Feldman, LA Boatner, TE Haynes
Applied physics letters 85 (22), 5191-5193, 2004
87 2004 