Kamu erişimi zorunlu olan makaleler - Prof. A. P. Gnana PrakashDaha fazla bilgi edinin
Hiçbir yerde sunulmuyor: 6
A comparison of electron, proton and gamma irradiation effects on the IV characteristics of 200 GHz SiGe HBTs
VN Hegde, TM Pradeep, N Pushpa, KC Praveen, KG Bhushan, ...
IEEE Transactions on Device and Materials Reliability 18 (4), 592-598, 2018
Zorunlu olanlar: Department of Science & Technology, India
In situ investigation of 75 MeV boron and 100 MeV oxygen ion irradiation effects on 50 GHz silicon–germanium heterojunction bipolar transistors
KC Praveen, N Pushpa, PS Naik, JD Cressler, HB Shiva, S Verma, ...
Radiation Effects and Defects in Solids 168 (7-8), 620-624, 2013
Zorunlu olanlar: Council of Scientific and Industrial Research, India
Gamma irradiation induced microstructural modification and electrical conductivity of bakelite resistive plate chamber material
KVA Kumar, M Raghavendra, VN Hegde, APG Prakash, HB Ravikumar
Journal of Radioanalytical and Nuclear Chemistry 327, 821-829, 2021
Zorunlu olanlar: Department of Science & Technology, India
Swift heavy ion irradiation and annealing studies on the I–V characteristics of N-channel depletion Metal–oxide–semiconductor field-effect transistors
N Pushpa, AP Gnana Prakash
Indian Journal of Physics 89, 943-950, 2015
Zorunlu olanlar: Department of Science & Technology, India
The reliability studies of nano-engineered SiGe HBTs using Pelletron accelerator
AP Prakash, KC Praveen, N Pushpa, JD Cressler
AIP Conference Proceedings 1661 (1), 2015
Zorunlu olanlar: Department of Science & Technology, India
Comparative study of electron beam and gamma ray irradiation effects in RPC glass detector materials by positron lifetime spectroscopy
KVA Kumar, APG Prakash, M Raghavendra, S Ningaraju, MP Boranna, ...
Nuclear and Particle Physics Proceedings 341, 12-14, 2023
Zorunlu olanlar: Department of Science & Technology, India
Bir yerde sunuluyor: 6
A comparison of 100 MeV oxygen ion and 60Co gamma irradiation effects on advanced 200 GHz SiGe heterojunction bipolar transistors
NH Vinayakprasanna, KC Praveen, N Pushpa, JD Cressler, ...
Indian Journal of Physics 89, 789-796, 2015
Zorunlu olanlar: Department of Science & Technology, India
High energy swift heavy ion irradiation and annealing effects on DC electrical characteristics of 200áGHz SiGe HBTs
VN Hegde, KC Praveen, TM Pradeep, N Pushpa, JD Cressler, A Tripathi, ...
Nuclear Engineering and Technology 51 (5), 1428-1435, 2019
Zorunlu olanlar: Department of Science & Technology, India
80 MeV carbon ion irradiation effects on advanced 200 GHz silicon-germanium heterojunction bipolar transitors
NH Vinayakprasanna, KC Praveen, N Pushpa, A Tripathi, JD Cressler, ...
Advanced Materials Letters 6 (2), 120-126, 2015
Zorunlu olanlar: Department of Science & Technology, India
Humidity enhanced ammonia gas sensing by Ga2O3/MWCNT nanocomposite at room temperature
MN Talwar, A Gangadhar, M Manoharan, R Manimozhi, S Srikantaswamy, ...
Materials Science in Semiconductor Processing 175, 108255, 2024
Zorunlu olanlar: Council of Scientific and Industrial Research, India
New aspects of femtosecond laser ablation of Si in water: a material perspective
KR Kumar, D Banerjee, M Akkanaboina, RSP Goud, A Anjum, ...
Journal of Physics: Condensed Matter 36 (23), 235702, 2024
Zorunlu olanlar: Council of Scientific and Industrial Research, India
5 MeV Proton irradiation effects on 200 GHz silicon–germanium heterojunction bipolar transistors
AP Gnana Prakash, VN Hegde, TM Pradeep, N Pushpa, PK Bajpai, ...
Radiation Effects and Defects in Solids 172 (11-12), 922-930, 2017
Zorunlu olanlar: Department of Science & Technology, India
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