Use of dicarboxylic acids to improve and diversify the material properties of porous chitosan membranes PH Chen, TY Kuo, FH Liu, YH Hwang, MH Ho, DM Wang, JY Lai, ... Journal of agricultural and food chemistry 56 (19), 9015-9021, 2008 | 77 | 2008 |
Improvement in the properties of chitosan membranes using natural organic acid solutions as solvents for chitosan dissolution PH Chen, YH Hwang, TY Kuo, FH Liu, JY Lai, HJ Hsieh Journal of Medical and Biological Engineering 27 (1), 23-28, 2007 | 69 | 2007 |
Copper bump structures having sidewall protection layers JC Lin, YH Hwung, HY Chen, PH Tsai, YF Lin, CL Huang, FW Tsai, ... US Patent 8,922,004, 2014 | 37 | 2014 |
High electron mobility transistors with improved heat dissipation F Ren, SJ Pearton, ME Law, YH Hwang US Patent 10,312,358, 2019 | 29 | 2019 |
Effect of proton irradiation on AlGaN/GaN high electron mobility transistor off-state drain breakdown voltage YH Hwang, S Li, YL Hsieh, F Ren, SJ Pearton, E Patrick, ME Law, ... Applied Physics Letters 104 (8), 2014 | 29 | 2014 |
Low and moderate dose gamma-irradiation and annealing impact on electronic and electrical properties of AlGaN/GaN high electron mobility transistors A Yadav, E Flitsiyan, L Chernyak, YH Hwang, YL Hsieh, L Lei, F Ren, ... Radiation Effects and Defects in Solids 170 (5), 377-385, 2015 | 28 | 2015 |
Effect of low dose γ-irradiation on DC performance of circular AlGaN/GaN high electron mobility transistors YH Hwang, YL Hsieh, L Lei, S Li, F Ren, SJ Pearton, A Yadav, C Schwarz, ... Journal of Vacuum Science & Technology B 32 (3), 2014 | 26 | 2014 |
Chapter 1: Effects of Radiation Damage in GaN and Related Materials AYPJK S. J. Pearton, Fan Ren, Y.-H. Hwang, Shun Li, Yueh-Ling Hsieh Gallium Nitride: Structure, Thermal Properties and Applications, 1-32, 2014 | 22* | 2014 |
Study on the effects of proton irradiation on the dc characteristics of AlGaN/GaN high electron mobility transistors with source field plate L Liu, YH Hwang, Y Xi, F Ren, V Craciun, SJ Pearton, G Yang, HY Kim, ... Journal of Vacuum Science & Technology B 32 (2), 2014 | 21 | 2014 |
Effect of 5 MeV proton radiation on DC performance and reliability of circular-shaped AlGaN/GaN high electron mobility transistors Y Xi, YL Hsieh, YH Hwang, S Li, F Rena, SJ Pearton, E Patrick, ME Law, ... | 21 | 2013 |
Effect of proton irradiation energy on AlGaN/GaN metal-oxide semiconductor high electron mobility transistors S Ahn, C Dong, W Zhu, BJ Kim, YH Hwang, F Ren, SJ Pearton, G Yang, ... Journal of Vacuum Science & Technology B 33 (5), 2015 | 18 | 2015 |
Effects of 340 keV proton irradiation on InGaN/GaN blue light-emitting diodes BJ Kim, YH Hwang, S Ahn, F Ren, SJ Pearton, J Kim, TS Jang Journal of Vacuum Science & Technology B 33 (5), 2015 | 17 | 2015 |
Novel approach to improve heat dissipation of AlGaN/GaN high electron mobility transistors with a Cu filled via under device active area YH Hwang, TS Kang, F Ren, SJ Pearton Journal of Vacuum Science & Technology B 32 (6), 2014 | 17 | 2014 |
Radiation effects in AlGaN/GaN and InAlN/GaN high electron mobility transistors SJ Pearton, YH Hwang, F Ren ECS Transactions 66 (1), 3, 2015 | 14 | 2015 |
Effect of proton irradiation on thermal resistance and breakdown voltage of InAlN/GaN high electron mobility transistors T Anderson, A Koehler, YH Hwang, YL Hsieh, S Li, F Ren, JW Johnson, ... Journal of Vacuum Science & Technology B 32 (5), 2014 | 13 | 2014 |
Degradation mechanisms of Ti/Al/Ni/Au-based Ohmic contacts on AlGaN/GaN HEMTs YH Hwang, S Ahn, C Dong, W Zhu, BJ Kim, L Le, F Ren, AG Lind, J Dahl, ... Journal of Vacuum Science & Technology B 33 (3), 2015 | 10 | 2015 |
Enhancement of AlGaN/GaN high electron mobility transistors off-state drain breakdown voltage via backside proton irradiation S Li, YH Hwang, YL Hsieh, L Lei, F Ren, SJ Pearton, E Patrick, ME Law, ... Journal of Vacuum Science & Technology B 32 (2), 2014 | 10 | 2014 |
Copper bump structures having sidewall protection layers JC Lin, YH Hwung, HY Chen, PH Tsai, YF Lin, CL Huang, FW Tsai, ... US Patent 9,093,314, 2015 | 9 | 2015 |
Study of hydrogen detection response time with Pt-gated diodes fabricated on AlGaN/GaN heterostructure Y Xi, L Liu, YH Hwang, O Phillips, F Ren, SJ Pearton, J Kim, CH Hsu, ... Journal of Vacuum Science & Technology B 31 (3), 2013 | 9 | 2013 |
Effect of annealing on electronic carrier transport properties of gamma-irradiated AlGaN/GaN high electron mobility transistors A Yadav, C Schwarz, M Shatkhin, L Wang, E Flitsiyan, L Chernyak, L Liu, ... ECS Transactions 61 (4), 171, 2014 | 8 | 2014 |