Characterization of intrinsic and impurity deep levels in ZnSe and ZnO crystals by nonlinear spectroscopy V Gavryushin, G Račiukaitis, D Juodžbalis, A Kazlauskas, V Kubertavičius
Journal of crystal growth 138 (1-4), 924-933, 1994
83 1994 Luminescent and nonlinear spectroscopy of recombination centers in isovalent doped ZnSe: Te crystals R Baltramiejūnas, VD Ryzhikov, V Gavryushin, A Kazlauskas, ...
Journal of luminescence 52 (1-4), 71-81, 1992
48 1992 Light absorption by nonequilibrium, two-photon-generated, free and localized carriers in ZnTe single crystals RA Baltrameyunas, YY Vaitkus, V Gavryushin
Soviet Physics—JETP 60, 43-48, 1984
27 1984 Methodology of medical diagnostics of human tissue by fluorescence V Gavryushin, J Vaitkus, A Vaitkuviene
Lithuania J Physics 40 (4), 232-236, 2000
17 2000 Nonlinear absorption spectroscopy study of deep levels in single crystals RA Baltrameyunas, R Baubinas, YY Vaĭtkus, V Gavryushin, ...
Fizika Tverdogo Tela 27 (2), 371-378, 1985
17 1985 Centers of radiative and nonradiative recombination in isoelectronically doped ZnSe: Te crystals R Baltramiejūnas, VD Ryzhikov, G Račiukaitis, V Gavryushin, ...
Physica B: Condensed Matter 185 (1-4), 245-249, 1993
16 1993 Giant nonlinear losses in GaSe crystals under double two-photon resonant conditions. Valence band structure from induced free carrier absorption R Baltramiejūnas, V Gavryushin, G Račiukaitis
Solid state communications 80 (4), 303-306, 1991
14 1991 Emission properties of ZnSe scintillation crystals co-doped by oxygen and aluminum D Shevchenko, V Gavryushin, J Mickevičius, N Starzhinskiy, I Zenya, ...
Journal of luminescence 143, 473-478, 2013
13 2013 Спектроскопия глубоких центров в монокристаллах ZnSe: Те методом лазерной модуляции двухступенчатого поглощения R Baltrameyunas, V Gavryushin, G Raciukaitis, V Ryzhikov, A Kazlauskas, ...
Fizika i Tekhnika Poluprovodnikov 22 (7), 1163-1170, 1988
12 1988 Spectral and polarizational investigations of two-photon absorption in semiconductors of group A2B6 R Baltramiejunas, J Vaitkus, J Višcakas
Izvestiya Akademii Nauk SSSR 46 (8), 1442-1451, 1982
12 1982 Stoichiometry of CdS crystals and their optical and lasing properties A Kazlauskas, V Gavryushin, G Račiukaitis, O Makienko
Journal of crystal growth 146 (1-4), 59-64, 1995
11 1995 Investigations of the deep levels in single crystals of ZnSe by method of nonlinear absorption spectroscopy R Baltramiejunas, R Baubinas, J Vaitkus, V Gavryushin, G Raciukaitis
Soviet Physics, Solid State 27, 227-231, 1985
10 1985 Influence of impurities on the two-photon absorption spectrum of ZnSe single crystals R Baltrameyunas, Y Vaitkus, V Gavryushin
Soviet Physics-Solid State 18 (10), 1723-1725, 1976
10 1976 Room‐temperature photoluminescence in quasi‐2D TlGaSe2 and TlInS2 semiconductors V Grivickas, K Gulbinas, V Gavryushin, V Bikbajevas, OV Korolik, ...
physica status solidi (RRL)–Rapid Research Letters 8 (7), 639-642, 2014
9 2014 Graphene brillouin zone and electronic energy dispersion V Gavryushin
Wolfram Demonstrations Project, 2010
9 2010 Strong photoacoustic pulses generated in TlGaSe2 layered crystals V Grivickas, V Bikbajevas, V Gavryushin, J Linnros
Journal of Physics: Conference Series 100 (4), 042007, 2008
8 2008 Induced Absorption Spectroscopy by Lattice Defects in Sillenite‐Type Crystals SM Efendiev, V Gavryushin, G Raciukaitis, VE Bagiev, V Kazlauskas, ...
physica status solidi (b) 162 (1), 281-288, 1990
8 1990 Nonlinear spectroscopy of deep levels in wide-gap II–VI semiconductors R Baltramiejũnas, V Gavryushin
Journal of crystal growth 101 (1-4), 699-704, 1990
8 1990 NONLINEAR PROCESSES OF LIGHT-ABSORPTION AND THEIR CONCURRENCES IN AIIBVI AND AIIIBVI GROUP SEMICONDUCTORS R Baltrameyunas, Y Vaitkus, VI GAVRYUSHIN
IZVESTIYA AKADEMII NAUK SSSR SERIYA FIZICHESKAYA 42 (12), 2539-2546, 1978
8 1978 EFFECT OF IMPURITIES ON 2-PHOTON ABSORPTION IN CDS SINGLE-CRYSTALS CDS R Baltrameyunas, V Gavryushin, Y Vaitkus
FIZIKA TVERDOGO TELA 18 (4), 1150-1153, 1976
8 1976