| Ultrawide‐bandgap semiconductors: research opportunities and challenges JY Tsao, S Chowdhury, MA Hollis, D Jena, NM Johnson, KA Jones, ... Advanced Electronic Materials 4 (1), 1600501, 2018 | 1416 | 2018 |
| Diamond on III-nitride device FJ Kub, TJ Anderson, VD Wheeler, AD Koehler, KD Hobart US Patent 10,002,958, 2018 | 398 | 2018 |
| Editors' Choice—Review—Theory and Characterization of Doping and Defects in β-Ga2O3 MJ Tadjer, JL Lyons, N Nepal, JA Freitas, AD Koehler, GM Foster ECS Journal of Solid State Science and Technology 8 (7), Q3187-Q3194, 2019 | 235 | 2019 |
| Vertical GaN junction barrier Schottky rectifiers by selective ion implantation Y Zhang, Z Liu, MJ Tadjer, M Sun, D Piedra, C Hatem, TJ Anderson, ... IEEE Electron Device Letters 38 (8), 1097-1100, 2017 | 174 | 2017 |
| A (001) β-Ga2O3 MOSFET with+ 2.9 V threshold voltage and HfO2 gate dielectric MJ Tadjer, NA Mahadik, VD Wheeler, ER Glaser, L Ruppalt, AD Koehler, ... ECS Journal of Solid State Science and Technology 5 (9), P468, 2016 | 161 | 2016 |
| III-nitride P-channel field effect transistor with hole carriers in the channel FJ Kub, TJ Anderson, AD Koehler, KD Hobart US Patent 9,006,791, 2015 | 96 | 2015 |
| Substrate-dependent effects on the response of AlGaN/GaN HEMTs to 2-MeV proton irradiation TJ Anderson, AD Koehler, JD Greenlee, BD Weaver, MA Mastro, JK Hite, ... IEEE Electron Device Letters 35 (8), 826-828, 2014 | 96 | 2014 |
| GaN-On-Diamond HEMT Technology With TAVG = 176°C at PDC,max = 56 W/mm Measured by Transient Thermoreflectance Imaging MJ Tadjer, TJ Anderson, MG Ancona, PE Raad, P Komarov, T Bai, ... IEEE Electron Device Letters 40 (6), 881-884, 2019 | 92 | 2019 |
| On the radiation tolerance of AlGaN/GaN HEMTs BD Weaver, TJ Anderson, AD Koehler, JD Greenlee, JK Hite, DI Shahin, ... ECS Journal of Solid State Science and Technology 5 (7), Q208, 2016 | 90 | 2016 |
| Phase Control of Crystalline Ga2O3 Films by Plasma-Enhanced Atomic Layer Deposition VD Wheeler, N Nepal, DR Boris, SB Qadri, LO Nyakiti, A Lang, A Koehler, ... Chemistry of Materials 32 (3), 1140-1152, 2020 | 80 | 2020 |
| Electrical characterization of ALD HfO2 high-k dielectrics on (2¯ 01) β-Ga2O3 DI Shahin, MJ Tadjer, VD Wheeler, AD Koehler, TJ Anderson, CR Eddy, ... Applied Physics Letters 112 (4), 2018 | 71 | 2018 |
| Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation AD Koehler, N Nepal, TJ Anderson, MJ Tadjer, KD Hobart, CR Eddy, ... Electron Device Letters, IEEE 34 (9), 1115-1117, 2013 | 71 | 2013 |
| Effect of reduced extended defect density in MOCVD grown AlGaN/GaN HEMTs on native GaN substrates TJ Anderson, MJ Tadjer, JK Hite, JD Greenlee, AD Koehler, KD Hobart, ... IEEE Electron Device Letters 37 (1), 28-30, 2015 | 70 | 2015 |
| Nanocrystalline diamond integration with III-nitride HEMTs TJ Anderson, KD Hobart, MJ Tadjer, AD Koehler, EA Imhoff, JK Hite, ... ECS Journal of Solid State Science and Technology 6 (2), Q3036, 2016 | 59 | 2016 |
| Degradation mechanisms of 2 MeV proton irradiated AlGaN/GaN HEMTs JD Greenlee, P Specht, TJ Anderson, AD Koehler, BD Weaver, ... Applied physics letters 107 (8), 2015 | 50 | 2015 |
| Vertical GaN junction barrier Schottky diodes AD Koehler, TJ Anderson, MJ Tadjer, A Nath, BN Feigelson, DI Shahin, ... ECS Journal of Solid State Science and Technology 6 (1), Q10, 2016 | 46 | 2016 |
| Impact of surface passivation on the dynamic on-resistance of proton-irradiated AlGaN/GaN HEMTs AD Koehler, TJ Anderson, MJ Tadjer, BD Weaver, JD Greenlee, ... IEEE Electron Device Letters 37 (5), 545-548, 2016 | 45 | 2016 |
| Enhancement mode AlGaN/GaN MOS high-electron-mobility transistors with ZrO2 gate dielectric deposited by atomic layer deposition TJ Anderson, VD Wheeler, DI Shahin, MJ Tadjer, AD Koehler, KD Hobart, ... Applied Physics Express 9 (7), 071003, 2016 | 44 | 2016 |
| Ga2O3 Schottky barrier and heterojunction diodes for power electronics applications MJ Tadjer, NA Mahadik, JA Freitas Jr, ER Glaser, AD Koehler, LE Luna, ... Gallium Nitride Materials and Devices XIII 10532, 56-61, 2018 | 43 | 2018 |
| Proton radiation-induced void formation in Ni/Au-gated AlGaN/GaN HEMTs AD Koehler, P Specht, TJ Anderson, BD Weaver, JD Greenlee, MJ Tadjer, ... IEEE Electron Device Letters 35 (12), 1194-1196, 2014 | 43 | 2014 |
Travis J. AndersonUniversity of Floridache.ufl.edu üzerinde doğrulanmış e-posta adresine sahip