Ionizing radiation damage effects on GaN devices SJ Pearton, F Ren, E Patrick, ME Law, AY Polyakov
ECS Journal of solid state science and technology 5 (2), Q35, 2015
394 2015 Gallium antimonide device related properties AG Milnes, AY Polyakov
Solid-state electronics 36 (6), 803-818, 1993
280 1993 Review of radiation damage in GaN-based materials and devices SJ Pearton, R Deist, F Ren, L Liu, AY Polyakov, J Kim
Journal of Vacuum Science & Technology A 31 (5), 2013
262 2013 Deep traps in GaN-based structures as affecting the performance of GaN devices AY Polyakov, IH Lee
Materials Science and Engineering: R: Reports 94, 1-56, 2015
259 2015 Lifetime-limiting defects in n− 4H-SiC epilayers PB Klein, BV Shanabrook, SW Huh, AY Polyakov, M Skowronski, ...
Applied Physics Letters 88 (5), 2006
256 2006 Radiation damage effects in Ga 2 O 3 materials and devices J Kim, SJ Pearton, C Fares, J Yang, F Ren, S Kim, AY Polyakov
Journal of Materials Chemistry C 7 (1), 10-24, 2019
249 2019 Radiation effects in GaN materials and devices AY Polyakov, SJ Pearton, P Frenzer, F Ren, L Liu, J Kim
Journal of Materials Chemistry C 1 (5), 877-887, 2013
241 2013 Electrical characteristics of Au and Ag Schottky contacts on AY Polyakov, NB Smirnov, EA Kozhukhova, VI Vdovin, K Ip, YW Heo, ...
Applied physics letters 83 (8), 1575-1577, 2003
238 2003 Microstructure and optical properties of epitaxial GaN on ZnO (0001) grown by reactive molecular beam epitaxy F Hamdani, M Yeadon, DJ Smith, H Tang, W Kim, A Salvador, ...
Journal of applied physics 83 (2), 983-990, 1998
162 1998 Indium arsenide: a semiconductor for high speed and electro-optical devices AG Milnes, AY Polyakov
Materials Science and Engineering: B 18 (3), 237-259, 1993
146 1993 Surface-plasmon resonance-enhanced multiphoton emission of high-brightness electron beams from a nanostructured copper cathode RK Li, H To, G Andonian, J Feng, A Polyakov, CM Scoby, K Thompson, ...
Physical review letters 110 (7), 074801, 2013
137 2013 Point defect induced degradation of electrical properties of Ga2O3 by 10 MeV proton damage AY Polyakov, NB Smirnov, IV Shchemerov, EB Yakimov, J Yang, F Ren, ...
Applied Physics Letters 112 (3), 2018
136 2018 Properties of Si donors and persistent photoconductivity in AlGaN AY Polyakov, NB Smirnov, AV Govorkov, MG Mil'Vidskii, JM Redwing, ...
Solid-State Electronics 42 (4), 627-635, 1998
132 1998 Reaching the theoretical resonance quality factor limit in coaxial plasmonic nanoresonators fabricated by helium ion lithography M Melli, A Polyakov, D Gargas, C Huynh, L Scipioni, W Bao, DF Ogletree, ...
Nano Letters 13 (6), 2687-2691, 2013
127 2013 VO2 films with strong semiconductor to metal phase transition prepared by the precursor oxidation process M Gurvitch, S Luryi, A Polyakov, A Shabalov, M Dudley, G Wang, S Ge, ...
Journal of Applied Physics 102 (3), 2007
125 2007 Lateral AP Zhang, JW Johnson, F Ren, J Han, AY Polyakov, NB Smirnov, ...
Applied Physics Letters 78 (6), 823-825, 2001
119 2001 Studies of the origin of the yellow luminescence band, the nature of nonradiative recombination and the origin of persistent photoconductivity in n-GaN films AY Polyakov, NB Smirnov, AS Usikov, AV Govorkov, BV Pushniy
Solid-State Electronics 42 (11), 1959-1967, 1998
118 1998 Hole traps and persistent photocapacitance in proton irradiated β-Ga2O3 films doped with Si AY Polyakov, NB Smirnov, IV Shchemerov, SJ Pearton, F Ren, ...
Apl Materials 6 (9), 2018
115 2018 On the origin of electrically active defects in AlGaN alloys grown by organometallic vapor phase epitaxy AY Polyakov, M Shin, JA Freitas, M Skowronski, DW Greve, RG Wilson
Journal of Applied Physics 80 (11), 6349-6354, 1996
115 1996 Proton implantation effects on electrical and recombination properties of undoped ZnO AY Polyakov, NB Smirnov, AV Govorkov, EA Kozhukhova, VI Vdovin, K Ip, ...
Journal of applied physics 94 (5), 2895-2900, 2003
110 2003 
Stephen PeartonProfessor of Materials Science and Engineering, University of Floridamse.ufl.edu üzerinde doğrulanmış e-posta adresine sahip