S. T. Picraux

Alıntı yapanlar

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Alıntılar	18950	2371
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i10-endeksi	222	56

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Katkıda bulunan yazarlar

Jian Yu Huang (黄建宇)Clean Nano Energy Center, State Key Laboratory of Metastable Materials Science and Technologyysu.edu.cn üzerinde doğrulanmış e-posta adresine sahip
Jeff TsaoSandia National Laboratoriessandia.gov üzerinde doğrulanmış e-posta adresine sahip
Wei-Kan ChuCullen Professor of Physics, University of Houstonuh.edu üzerinde doğrulanmış e-posta adresine sahip
Jinkyoung YooCenter for Integrated Nanotechnologies, Los Alamos National Laboratorylanl.gov üzerinde doğrulanmış e-posta adresine sahip
Yang Liu3Mmmm.com üzerinde doğrulanmış e-posta adresine sahip
Daniel E. PereaPacific Northwest National Laboratorypnnl.gov üzerinde doğrulanmış e-posta adresine sahip
R M BiefeldRetiredsandia.gov üzerinde doğrulanmış e-posta adresine sahip
L. Ralph DawsonResearch Professor of ECE, University of New Mexicochtm.unm.edu üzerinde doğrulanmış e-posta adresine sahip

Takip et

S. T. Picraux

Los Alamos National Laboratory

lanl.gov üzerinde doğrulanmış e-posta adresine sahip

materials science


Başlık Alıntılara göre sırala Yıla göre sırala Başlığa göre sırala	Alıntı yapanlar Alıntı yapanlar	Yıl
Materials analysis by ion channeling: submicron crystallography LC Feldman, JW Mayer, STA Picraux Academic Press, 2012	1674	2012
Anisotropic swelling and fracture of silicon nanowires during lithiation XH Liu, H Zheng, L Zhong, S Huang, K Karki, LQ Zhang, Y Liu, A Kushima, ... Nano letters 11 (8), 3312-3318, 2011	867	2011
In situ atomic-scale imaging of electrochemical lithiation in silicon XH Liu, JW Wang, S Huang, F Fan, X Huang, Y Liu, S Krylyuk, J Yoo, ... Nature nanotechnology 7 (11), 749-756, 2012	708	2012
Ultrafast electrochemical lithiation of individual Si nanowire anodes XH Liu, LQ Zhang, L Zhong, Y Liu, H Zheng, JW Wang, JH Cho, ... Nano letters 11 (6), 2251-2258, 2011	488	2011
Adaptable silicon–carbon nanocables sandwiched between reduced graphene oxide sheets as lithium ion battery anodes B Wang, X Li, X Zhang, B Luo, M Jin, M Liang, SA Dayeh, ST Picraux, ... ACS nano 7 (2), 1437-1445, 2013	477	2013
Reversible nanopore formation in Ge nanowires during lithiation–delithiation cycling: An in situ transmission electron microscopy study XH Liu, S Huang, ST Picraux, J Li, T Zhu, JY Huang Nano letters 11 (9), 3991-3997, 2011	446	2011
Ion implantation of silicon and germanium at room temperature. Analysis by means of 1.0-MeV helium ion scattering JW Mayer, L Eriksson, ST Picraux, JA Davies Canadian Journal of Physics 46 (6), 663-673, 1968	360	1968
Ion beams in silicon processing and characterization E Chason, ST Picraux, JM Poate, JO Borland, MI Current, ... Journal of applied physics 81 (10), 6513-6561, 1997	347	1997
Epitaxial growth of rare‐earth silicides on (111) Si JA Knapp, ST Picraux Applied physics letters 48 (7), 466-468, 1986	325	1986
Lotus effect amplifies light-induced contact angle switching R Rosario, D Gust, AA Garcia, M Hayes, JL Taraci, T Clement, JW Dailey, ... The Journal of Physical Chemistry B 108 (34), 12640-12642, 2004	316	2004
Dependence of critical layer thickness on strain for InxGa1− xAs/GaAs strained‐layer superlattices IJ Fritz, ST Picraux, LR Dawson, TJ Drummond, WD Laidig, NG Anderson Applied physics letters 46 (10), 967-969, 1985	284	1985
Are nanoporous materials radiation resistant? EM Bringa, JD Monk, A Caro, A Misra, L Zepeda-Ruiz, M Duchaineau, ... Nano letters 12 (7), 3351-3355, 2012	271	2012
Critical Stresses for Strained-Layer Plasticity JY Tsao, BW Dodson, ST Picraux, DM Cornelison Physical review letters 59 (21), 2455, 1987	240	1987
Formation of SiC in silicon by ion implantation JA Borders, ST Picraux, W Beezhold Applied Physics Letters 18 (11), 509-511, 1971	238	1971
Role of integrated lateral stress in surface deformation of He‐implanted surfaces EP EerNisse, ST Picraux Journal of Applied Physics 48 (1), 9-17, 1977	235	1977
Defect trapping of ion‐implanted deuterium in Fe SM Myers, ST Picraux, RE Stoltz Journal of Applied Physics 50 (9), 5710-5719, 1979	215	1979
Partitioning of ion-induced surface and bulk displacements DK Brice, JY Tsao, ST Picraux Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1989	192	1989
Direct observation of nanoscale size effects in Ge semiconductor nanowire growth SA Dayeh, ST Picraux Nano letters 10 (10), 4032-4039, 2010	183	2010
Precipitation and relaxation in strained Si1− yCy/Si heterostructures JW Strane, HJ Stein, SR Lee, ST Picraux, JK Watanabe, JW Mayer Journal of applied physics 76 (6), 3656-3668, 1994	178	1994
Metastable SiGeC formation by solid phase epitaxy JW Strane, HJ Stein, SR Lee, BL Doyle, ST Picraux, JW Mayer Applied physics letters 63 (20), 2786-2788, 1993	175	1993

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