Ventilator-associated pneumonia and ICU mortality in severe ARDS patients ventilated according to a lung-protective strategy JM Forel, F Voillet, D Pulina, A Gacouin, G Perrin, K Barrau, S Jaber, ... Critical Care 16, 1-10, 2012 | 205 | 2012 |
Sensitized solar cells based on natural dyes A Torchani, S Saadaoui, R Gharbi, M Fathallah Current Applied Physics 15 (3), 307-312, 2015 | 91 | 2015 |
Observation of negative capacitance in a-SiC: H/a-Si: H UV photodetectors R Gharbi, M Abdelkrim, M Fathallah, E Tresso, S Ferrero, CF Pirri, ... Solid-state electronics 50 (3), 367-371, 2006 | 55 | 2006 |
A contactless method for investigating the thermal properties of thin films A Skumanich, H Dersch, M Fathallah, NM Amer Applied Physics A 43, 297-300, 1987 | 42 | 1987 |
Hydrogen and nitrogen effects on optical and structural properties of amorphous carbon R Gharbi, M Fathallah, N Alzaied, E Tresso, A Tagliaferro Materials Science and Engineering: C 28 (5-6), 795-798, 2008 | 27 | 2008 |
Effect of defects on electrical properties of 4H-SiC Schottky diodes MB Karoui, R Gharbi, N Alzaied, M Fathallah, E Tresso, L Scaltrito, ... Materials Science and Engineering: C 28 (5-6), 799-804, 2008 | 20 | 2008 |
Optimizing OSSB generation using semiconductor optical amplifier (SOA) for 5G millimeter wave switching F Saadaoui, M Fathallah, AM Ragheb, MI Memon, H Fathallah, ... IEEE Access 5, 6715-6723, 2017 | 19 | 2017 |
Influence of inhomogeneous contact in electrical properties of 4H–SiC based Schottky diode MB Karoui, R Gharbi, N Alzaied, M Fathallah, E Tresso, L Scaltrito, ... Solid-state electronics 52 (8), 1232-1236, 2008 | 19 | 2008 |
Study on the microstructural and overall disorder in hydrogenated amorphous silicon carbon films G Ambrosone, DK Basa, U Coscia, M Fathallah Journal of Applied Physics 104 (12), 2008 | 17 | 2008 |
Light-soaking in a-SiC: H films grown by PECVD in undiluted and hydrogen diluted SiH4+ CH4 gas mixtures M Fathallah, R Gharbi, G Crovini, F Demichelis, F Giorgis, CF Pirri, ... Journal of non-crystalline solids 198, 490-494, 1996 | 16 | 1996 |
Series resistance study of Schottky diodes developed on 4H-SiC wafers using a contact of titanium or molybdenum K Shili, MB Karoui, R Gharbi, M Abdelkrim, M Fathallah, S Ferrero Microelectronic engineering 106, 43-47, 2013 | 15 | 2013 |
Properties of a-SiC: H films and solar cells R Gharbi, M Fathallah, CF Pirri, E Tresso, G Crovini, F Giorgis Canadian Journal of Physics 77 (9), 699-704, 2000 | 15 | 2000 |
On the formation process of the Staebler—Wronski effect in a-Si: H deduced from its wavelength dependence M Fathallah Philosophical Magazine B 61 (3), 403-412, 1990 | 15 | 1990 |
Structural, optical and electrical properties of helium diluted a-Si1− xCx: H films deposited by PECVD M Loulou, R Gharbi, MA Fathallah, G Ambrosone, U Coscia, G Abbate, ... Journal of non-crystalline solids 352 (9-20), 1388-1391, 2006 | 11 | 2006 |
Gap state defects in hydrogenated amorphous silicon-carbon alloys studied by photothermal deflection spectroscopy M Fathallah Journal of non-crystalline solids 164, 909-912, 1993 | 11 | 1993 |
Study of natural dyes for sensitized solar cells applications A Torchani, R Gharbi, M Fathallah Sensors & Transducers 27 (5), 185, 2014 | 10 | 2014 |
High polysilicon TFT field effect mobility reached thanks to slight phosphorus content in the active layer M Zaghdoudi, R Rogel, N Alzaied, M Fathallah, T Mohammed-Brahim Materials Science and Engineering: C 28 (5-6), 1010-1013, 2008 | 10 | 2008 |
Structural, optical and electrical properties of μc-Si: H deposited by ECR M Mars, M Fathallah, E Tresso, S Ferrero Journal of non-crystalline solids 299, 133-136, 2002 | 10 | 2002 |
Determination of absorption coefficients and thermal diffusivity of modulated doped GaAlAs/GaAs heterostructure by photothermal deflection spectroscopy S Aloulou, M Fathallah, M Oueslati, A Sfaxi American Journal of Applied Sciences 2 (10), 1412, 2005 | 8 | 2005 |
Observation of light‐induced defect formation in hydrogenated amorphous silicon by subgap illumination A Skumanich, M Fathallah, NM Amer Applied physics letters 54 (19), 1887-1889, 1989 | 8 | 1989 |