Hongping Zhao

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	Hepsi	2020 yılından bugüne
Alıntılar	9325	4954
h-endeksi	53	39
i10-endeksi	128	102

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Katkıda bulunan yazarlar

Nelson TansuHead of School & Professor, School of Electrical & Mechanical Engineering [EEE, ME, & BME]adelaide.edu.au üzerinde doğrulanmış e-posta adresine sahip
A F M Anhar Uddin BhuiyanAssistant Professor, Electrical and Computer Engineering, University of Massachusetts Lowelluml.edu üzerinde doğrulanmış e-posta adresine sahip
Zixuan FengThe Ohio State Universityosu.edu üzerinde doğrulanmış e-posta adresine sahip
Jing ZhangAssociate Professor, Rochester Institute of Technologyrit.edu üzerinde doğrulanmış e-posta adresine sahip
Jinwoo HwangAssociate Professor, Materials Science and Engineering, Ohio State Universityosu.edu üzerinde doğrulanmış e-posta adresine sahip
Siddharth RajanElectrical and Computer Engineering, Ohio State Universityece.osu.edu üzerinde doğrulanmış e-posta adresine sahip
Md Rezaul KarimIntel Corporationosu.edu üzerinde doğrulanmış e-posta adresine sahip
Yuxuan ZhangFinwave Semiconductor Inc.finwavesemi.com üzerinde doğrulanmış e-posta adresine sahip
Kathleen KashProfessor of Physics, Case Western Reserve Universitycase.edu üzerinde doğrulanmış e-posta adresine sahip
Aaron ArehartAssistant Research Professor of Electrical and Computer Engineering, The Ohio State Universityosu.edu üzerinde doğrulanmış e-posta adresine sahip
Steven RingelThe Ohio State Universityosu.edu üzerinde doğrulanmış e-posta adresine sahip
Shin MouAir Force Research Laboratoryus.af.mil üzerinde doğrulanmış e-posta adresine sahip
Adam T. NealAir Force Research Labus.af.mil üzerinde doğrulanmış e-posta adresine sahip
Uttam SingisettiProfessor, Electrical Engineering, Univeristy at Buffalo (SUNY)buffalo.edu üzerinde doğrulanmış e-posta adresine sahip
Leonard BrillsonThe Ohio State Universityosu.edu üzerinde doğrulanmış e-posta adresine sahip
Baishakhi MazumderUniversity at Buffalobuffalo.edu üzerinde doğrulanmış e-posta adresine sahip
Philip FengWally Rhines Endowed Professor of ECE, Graduate Faculty in Physics, University of Floridaufl.edu üzerinde doğrulanmış e-posta adresine sahip
Vijay Gopal Thirupakuzi VangipuramThe Ohio State Universitybuckeyemail.osu.edu üzerinde doğrulanmış e-posta adresine sahip
kaitian zhangThe Ohio State Universityosu.edu üzerinde doğrulanmış e-posta adresine sahip
Marko J. TadjerNaval Research Laboratorynrl.navy.mil üzerinde doğrulanmış e-posta adresine sahip

Takip et

Hongping Zhao

Professor of Electrical & Computer Engineering, Materials Science & Engineering, OSU

osu.edu üzerinde doğrulanmış e-posta adresine sahip - Ana Sayfa

wide and ultrawide bandgap semiconductor materials and devices III-nitridesII-IV-nitridesIII-Oxides


Başlık Alıntılara göre sırala Yıla göre sırala Başlığa göre sırala	Alıntı yapanlar Alıntı yapanlar	Yıl
Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells H Zhao, G Liu, J Zhang, JD Poplawsky, V Dierolf, N Tansu Optics express 19 (104), A991-A1007, 2011	631	2011
MOCVD homoepitaxy of Si-doped (010) β-Ga2O3 thin films with superior transport properties Z Feng, AFM Anhar Uddin Bhuiyan, MR Karim, H Zhao Applied Physics Letters 114 (25), 2019	336	2019
Donors and deep acceptors in β-Ga2O3 AT Neal, S Mou, S Rafique, H Zhao, E Ahmadi, JS Speck, KT Stevens, ... Applied Physics Letters 113 (6), 2018	300	2018
Self-consistent analysis of strain-compensated InGaN–AlGaN quantum wells for lasers and light-emitting diodes H Zhao, RA Arif, YK Ee, N Tansu IEEE Journal of Quantum Electronics 45 (1), 66-78, 2008	263	2008
Homoepitaxial growth of β-Ga2O3 thin films by low pressure chemical vapor deposition S Rafique, L Han, MJ Tadjer, JA Freitas, NA Mahadik, H Zhao Applied Physics Letters 108 (18), 2016	250	2016
Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes H Zhao, G Liu, RA Arif, N Tansu Solid-State Electronics 54 (10), 1119-1124, 2010	233	2010
Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers J Zhang, H Zhao, N Tansu Applied Physics Letters 97 (11), 2010	232	2010
Analysis of internal quantum efficiency and current injection efficiency in III-nitride light-emitting diodes H Zhao, G Liu, J Zhang, RA Arif, N Tansu Journal of Display Technology 9 (4), 212-225, 2013	212	2013
Analysis of InGaN-delta-InN quantum wells for light-emitting diodes H Zhao, G Liu, N Tansu Applied Physics Letters 97 (13), 2010	202	2010
Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded growth-temperature profile H Zhao, G Liu, XH Li, GS Huang, JD Poplawsky, ST Penn, V Dierolf, ... Applied Physics Letters 95 (6), 2009	199	2009
III-nitride photonics N Tansu, H Zhao, G Liu, XH Li, J Zhang, H Tong, YK Ee IEEE Photonics Journal 2 (2), 241-248, 2010	180	2010
MOCVD epitaxy of β-(AlxGa1− x) 2O3 thin films on (010) Ga2O3 substrates and N-type doping AFM Anhar Uddin Bhuiyan, Z Feng, JM Johnson, Z Chen, HL Huang, ... Applied Physics Letters 115 (12), 2019	170	2019
Low-pressure CVD-grown β-Ga2O3 bevel-field-plated Schottky barrier diodes C Joishi, S Rafique, Z Xia, L Han, S Krishnamoorthy, Y Zhang, S Lodha, ... Applied Physics Express 11 (3), 031101, 2018	168	2018
Optical signatures of deep level defects in Ga2O3 H Gao, S Muralidharan, N Pronin, MR Karim, SM White, T Asel, G Foster, ... Applied Physics Letters 112 (24), 2018	164	2018
Spontaneous emission and characteristics of staggered InGaN quantum-well light-emitting diodes RA Arif, H Zhao, YK Ee, N Tansu IEEE Journal of Quantum Electronics 44 (6), 573-580, 2008	162	2008
Heteroepitaxy of N-type β-Ga2O3 thin films on sapphire substrate by low pressure chemical vapor deposition S Rafique, L Han, AT Neal, S Mou, MJ Tadjer, RH French, H Zhao Applied Physics Letters 109 (13), 2016	161	2016
Design analysis of staggered InGaN quantum wells light-emitting diodes at 500–540 nm H Zhao, RA Arif, N Tansu IEEE Journal of selected topics in quantum electronics 15 (4), 1104-1114, 2009	155	2009
Optimization of light extraction efficiency of III-nitride LEDs with self-assembled colloidal-based microlenses YK Ee, P Kumnorkaew, RA Arif, H Tong, H Zhao, JF Gilchrist, N Tansu IEEE Journal of Selected Topics in Quantum Electronics 15 (4), 1218-1225, 2009	155	2009
LPCVD homoepitaxy of Si doped β-Ga2O3 thin films on (010) and (001) substrates S Rafique, MR Karim, JM Johnson, J Hwang, H Zhao Applied Physics Letters 112 (5), 2018	142	2018
Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid-and deep-ultraviolet spectral regimes J Zhang, H Zhao, N Tansu Applied Physics Letters 98 (17), 2011	141	2011

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