Ya-Hong Xie

Alıntı yapanlar

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Finansman sağlayan kuruluşun getirdiği zorunluluğa dayalı olarak

Katkıda bulunan yazarlar

E A FitzgeraldCornell, ATT, MIT, Massachusetts Institute of Technology, NTUmit.edu üzerinde doğrulanmış e-posta adresine sahip
Don MonroeFreelance science writerDonMonroe.info üzerinde doğrulanmış e-posta adresine sahip
Thomas SchroederLeibniz-Institut für Kristallzüchtung (IKZ); Professor in Physics at Humboldt Universität zu Berlinikz-berlin.de üzerinde doğrulanmış e-posta adresine sahip
Congqin MiaoUniversity of California, Los Angelesucla.edu üzerinde doğrulanmış e-posta adresine sahip
Wei ZhangPhD of Materials Science and Engineering, University of California, Los Angelesucla.edu üzerinde doğrulanmış e-posta adresine sahip
JCS WooUniversity of California, Los Angelesee.ucla.edu üzerinde doğrulanmış e-posta adresine sahip
Kang L. WangElectrical Engineering Departmentee.ucla.edu üzerinde doğrulanmış e-posta adresine sahip
Wei LiuFujian Institute of Research on the Structure of Matter, Chinese Academy of Sciencesfjirsm.ac.cn üzerinde doğrulanmış e-posta adresine sahip
Michael HilkeMcGill Universityphysics.mcgill.ca üzerinde doğrulanmış e-posta adresine sahip
Yanjie WangUniversity of California,Los angelesucla.edu üzerinde doğrulanmış e-posta adresine sahip
Leonard FeldmanProfessor of Physics and Materials Sciencerutgers.edu üzerinde doğrulanmış e-posta adresine sahip
Eli Yablonovitcheecs.berkeley.edu üzerinde doğrulanmış e-posta adresine sahip
Bo-Chao HuangELECTRICAL ENGINEERING, UCLAucla.edu üzerinde doğrulanmış e-posta adresine sahip
Jianlin LiuProfessor of Electrical and Computer Engineering, University of California, Riversideece.ucr.edu üzerinde doğrulanmış e-posta adresine sahip
K. A. JenkinsResearch Staff Member, IBM T.J. Watson Research Centerus.ibm.com üzerinde doğrulanmış e-posta adresine sahip
Hyun-Mi KimKorea Electronics Technolgy Instituteketi.re.kr üzerinde doğrulanmış e-posta adresine sahip
Mark S HybertsenSenior Physicist, Emeritus, Center for Functional Nanomaterials, Brookhaven National Laboratorybnl.gov üzerinde doğrulanmış e-posta adresine sahip
James Alexander LiddleChief, Microsystems and Nanotechnology Division, NISTnist.gov üzerinde doğrulanmış e-posta adresine sahip
Faxian XiuPhysics Department, Fudan Universityfudan.edu.cn üzerinde doğrulanmış e-posta adresine sahip
Sergey GaponenkoHead of Laboratory Stepanov Institute of Physics, Nat Academy of Sci, Belarusifanbel.bas-net.by üzerinde doğrulanmış e-posta adresine sahip

Takip et

Ya-Hong Xie

University of California Los Angeles, Materials Sciences & Engineering

ucla.edu üzerinde doğrulanmış e-posta adresine sahip - Ana Sayfa

bio-sensing plasmonics semiconductor nano-science


Başlık Alıntılara göre sırala Yıla göre sırala Başlığa göre sırala	Alıntı yapanlar Alıntı yapanlar	Yıl
Totally relaxed Ge_xSi_1−x layers with low threading dislocation densities grown on Si substrates EA Fitzgerald, YH Xie, ML Green, D Brasen, AR Kortan, J Michel, YJ Mii, ... Applied physics letters 59 (7), 811-813, 1991	940	1991
Relaxed Ge_xSi_1−x structures for III–V integration with Si and high mobility two‐dimensional electron gases in Si EA Fitzgerald, YH Xie, D Monroe, PJ Silverman, JM Kuo, AR Kortan, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1992	685	1992
Impurity enhancement of the 1.54‐μm Er³⁺ luminescence in silicon J Michel, JL Benton, RF Ferrante, DC Jacobson, DJ Eaglesham, ... Journal of applied physics 70 (5), 2672-2678, 1991	582	1991
Light emission from silicon SS Iyer, YH Xie Science 260 (5104), 40-46, 1993	506	1993
Size, shape, and composition of luminescent species in oxidized Si nanocrystals and H-passivated porous Si S Schuppler, SL Friedman, MA Marcus, DL Adler, YH Xie, FM Ross, ... Physical Review B 52 (7), 4910, 1995	460	1995
Luminescence and structural study of porous silicon films YH Xie, WL Wilson, FM Ross, JA Mucha, EA Fitzgerald, JM Macaulay, ... Journal of applied physics 71 (5), 2403-2407, 1992	426	1992
Dimensions of luminescent oxidized and porous silicon structures S Schuppler, SL Friedman, MA Marcus, DL Adler, YH Xie, FM Ross, ... Physical review letters 72 (16), 2648, 1994	385	1994
Extremely high electron mobility in Si/Ge_xSi_1−x structures grown by molecular beam epitaxy YJ Mii, YH Xie, EA Fitzgerald, D Monroe, FA Thiel, BE Weir, LC Feldman Applied Physics Letters 59 (13), 1611-1613, 1991	359	1991
Semiconductor surface roughness: Dependence on sign and magnitude of bulk strain YH Xie, GH Gilmer, C Roland, PJ Silverman, SK Buratto, JY Cheng, ... Physical Review Letters 73 (22), 3006, 1994	340	1994
Very high mobility two‐dimensional hole gas in Si/GexSi1− x/Ge structures grown by molecular beam epitaxy YH Xie, D Monroe, EA Fitzgerald, PJ Silverman, FA Thiel, GP Watson Applied physics letters 63 (16), 2263-2264, 1993	258	1993
Ultra‐sensitive graphene‐plasmonic hybrid platform for label‐free detection P Wang, O Liang, W Zhang, T Schroeder, YH Xie Advanced Materials 25 (35), 4918-4924, 2013	246	2013
Surface morphology of related Ge_xSi_1−x films JWP Hsu, EA Fitzgerald, YH Xie, PJ Silverman, MJ Cardillo Applied physics letters 61 (11), 1293-1295, 1992	242	1992
Semiconductor heterostructure devices with strained semiconductor layers D Brasen, EA Fitzgerald Jr, ML Green, DP Monroe, PJ Silverman, YH Xie US Patent 5,442,205, 1995	228	1995
Label-free SERS selective detection of dopamine and serotonin using graphene-Au nanopyramid heterostructure P Wang, M Xia, O Liang, K Sun, AF Cipriano, T Schroeder, H Liu, YH Xie Analytical chemistry 87 (20), 10255-10261, 2015	192	2015
Vertical graphene base transistor W Mehr, J Dabrowski, JC Scheytt, G Lippert, YH Xie, MC Lemme, ... IEEE Electron Device Letters 33 (5), 691-693, 2012	188	2012
Relaxed template for fabricating regularly distributed quantum dot arrays YH Xie, SB Samavedam, M Bulsara, TA Langdo, EA Fitzgerald Applied physics letters 71 (24), 3567-3568, 1997	176	1997
Absorption and luminescence studies of free-standing porous silicon films YH Xie, MS Hybertsen, WL Wilson, SA Ipri, GE Carver, WL Brown, E Dons, ... Physical Review B 49 (8), 5386, 1994	157	1994
Comparison of mobility‐limiting mechanisms in high‐mobility Si_1−xGe_x heterostructures D Monroe, YH Xie, EA Fitzgerald, PJ Silverman, GP Watson Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1993	150	1993
Large scale pattern graphene electrode for high performance in transparent organic single crystal field-effect transistors W Liu, BL Jackson, J Zhu, CQ Miao, CH Chung, YJ Park, K Sun, J Woo, ... Acs Nano 4 (7), 3927-3932, 2010	148	2010
Spectroscopic Signatures of AA′ and AB Stacking of Chemical Vapor Deposited Bilayer MoS₂ M Xia, B Li, K Yin, G Capellini, G Niu, Y Gong, W Zhou, PM Ajayan, ... ACS nano 9 (12), 12246-12254, 2015	147	2015

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