Flexible ionic‐electronic hybrid oxide synaptic TFTs with programmable dynamic plasticity for brain‐inspired neuromorphic computing RA John, J Ko, MR Kulkarni, N Tiwari, NA Chien, NG Ing, WL Leong, ...
Small 13 (32), 1701193, 2017
175 2017 Reduced surface leakage current and trapping effects in AlGaN/GaN high electron mobility transistors on silicon with SiN/Al2O3 passivation ZH Liu, GI Ng, H Zhou, S Arulkumaran, YKT Maung
Applied Physics Letters 98 (11), 2011
151 2011 Improved two-dimensional electron gas transport characteristics in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor with atomic layer-deposited Al2O3 … ZH Liu, GI Ng, S Arulkumaran, YKT Maung, KL Teo, SC Foo, ...
Applied Physics Letters 95 (22), 2009
135 2009 AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si (111) S Tripathy, VKX Lin, SB Dolmanan, JPY Tan, RS Kajen, LK Bera, SL Teo, ...
Applied Physics Letters 101 (8), 2012
128 2012 Gallium Nitride Transistors on Large-Diameter Si(111) Substrate S Arulkumaran, GI Ng
Gallium Nitride (GaN): Physics, Devices, and Technology, 63-107, 2015
114 * 2015 Reactive sputter deposition and characterization of tantalum nitride thin films K Radhakrishnan, NG Ing, R Gopalakrishnan
Materials Science and Engineering: B 57 (3), 224-227, 1999
110 1999 Temperature-dependent forward gate current transport in atomic-layer-deposited Al2O3/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor ZH Liu, GI Ng, S Arulkumaran, YKT Maung, H Zhou
Applied Physics Letters 98 (16), 2011
100 2011 InAlN/GaN HEMTs on Si With High W Xing, Z Liu, H Qiu, K Ranjan, Y Gao, GI Ng, T Palacios
IEEE Electron Device Letters 39 (1), 75-78, 2017
98 2017 0.10 μm graded InGaAs channel InP HEMT with 305 GHz fT and 340 GHz fmax M Wojtowicz, R Lai, DC Streit, GI Ng, TR Block, KL Tan, PH Liu, ...
IEEE Electron Device Letters 15 (11), 477-479, 1994
98 1994 Atomic layer deposition of ZrO2 as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon G Ye, H Wang, S Arulkumaran, GI Ng, R Hofstetter, Y Li, MJ Anand, ...
Applied Physics Letters 103 (14), 2013
95 2013 High Microwave-Noise Performance of AlGaN/GaN MISHEMTs on Silicon With ZH Liu, GI Ng, S Arulkumaran, YKT Maung, KL Teo, SC Foo, ...
IEEE electron device letters 31 (2), 96-98, 2009
89 2009 Low‐ and high‐field transport properties of pseudomorphic Inx 1−x As/In0.52 Al0.48 As (0.53≤x ≤0.65) modulation‐doped heterostructures WP Hong, GI Ng, PK Bhattacharya, D Pavlidis, S Willing, B Das
Journal of Applied Physics 64 (4), 1945-1949, 1988
87 1988 Direct current and microwave characteristics of sub-micron AlGaN/GaN high-electron-mobility transistors on 8-inch Si (111) substrate S Arulkumaran, GI Ng, S Vicknesh, H Wang, KS Ang, JPY Tan, VK Lin, ...
Japanese Journal of Applied Physics 51 (11R), 111001, 2012
83 2012 Temperature dependence of Ohmic contact characteristics in AlGaN/GaN high electron mobility transistors from− 50 to 200 C ZH Liu, S Arulkumaran, GI Ng
Applied physics letters 94 (14), 2009
81 2009 Low-temperature chemical transformations for high-performance solution-processed oxide transistors RA John, NA Chien, S Shukla, N Tiwari, C Shi, NG Ing, N Mathews
Chemistry of Materials 28 (22), 8305-8313, 2016
77 2016 Demonstration of submicron-gate AlGaN/GaN high-electron-mobility transistors on silicon with complementary metal–oxide–semiconductor-compatible non-gold metal stack S Arulkumaran, GI Ng, S Vicknesh, H Wang, KS Ang, CM Kumar, KL Teo, ...
Applied Physics Express 6 (1), 016501, 2012
77 2012 Improved Power Device Figure-of-Merit (4.0× 108 V2 Ω-1 cm-2) in AlGaN/GaN High-Electron-Mobility Transistors on High-Resistivity 4-in. Si S Arulkumaran, S Vicknesh, NG Ing, SL Selvaraj, T Egawa
Applied physics express 4 (8), 084101, 2011
76 2011 Improved Linearity for Low-Noise Applications in 0.25- ZH Liu, GI Ng, S Arulkumaran, YKT Maung, KL Teo, SC Foo, ...
IEEE Electron Device Letters 31 (8), 803-805, 2010
75 2010 Enhanced Breakdown Voltage With High Johnson's Figure-of-Merit in 0.3- S Arulkumaran, GI Ng, S Vicknesh
IEEE electron device letters 34 (11), 1364-1366, 2013
71 2013 Temperature dependent microwave performance of AlGaN/GaN high-electron-mobility transistors on high-resistivity silicon substrate S Arulkumaran, ZH Liu, GI Ng, WC Cheong, R Zeng, J Bu, H Wang, ...
Thin Solid Films 515 (10), 4517-4521, 2007
70 2007 