Youngho Kang

Alıntı yapanlar

	Hepsi	2020 yılından bugüne
Alıntılar	1908	1421
h-endeksi	25	21
i10-endeksi	44	39

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20132014201520162017201820192020202120222023202420257 29 41 42 67 107 189 225 224 267 288 345 71

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Finansman sağlayan kuruluşun getirdiği zorunluluğa dayalı olarak

Katkıda bulunan yazarlar

Seungwu HanSeoul National Universitysnu.ac.kr üzerinde doğrulanmış e-posta adresine sahip
Jae Kyeong JeongHanyang Univ.hanyang.ac.kr üzerinde doğrulanmış e-posta adresine sahip
Chris G. Van de WalleProfessor of Materials, University of California, Santa Barbaramrl.ucsb.edu üzerinde doğrulanmış e-posta adresine sahip
Ho-Hyun NahmResearch Assistant Professor, Department of Physics, KAISTkaist.ac.kr üzerinde doğrulanmış e-posta adresine sahip
Karthik KrishnaswamyIntel Corporationintel.com üzerinde doğrulanmış e-posta adresine sahip
Hartwin PeelaersUniversity of Kansasku.edu üzerinde doğrulanmış e-posta adresine sahip
Junwoo SonSeoul National Universitysnu.ac.kr üzerinde doğrulanmış e-posta adresine sahip
Cheol Seong HwangProfessor, Department of Materials Science and Engineering, Seoul National Universitysnu.ac.kr üzerinde doğrulanmış e-posta adresine sahip
Young-Woo SonKorea Institute for Advanced Studykias.re.kr üzerinde doğrulanmış e-posta adresine sahip

Takip et

Youngho Kang

Department of Materials Science and Engineering, Incheon National University

inu.ac.kr üzerinde doğrulanmış e-posta adresine sahip

First principles calculations Semiconductors Defects Transport Optical properties


Başlık Alıntılara göre sırala Yıla göre sırala Başlığa göre sırala	Alıntı yapanlar Alıntı yapanlar	Yıl
Fundamental limits on the electron mobility of β-Ga2O3 Y Kang, K Krishnaswamy, H Peelaers, CG Van de Walle Journal of Physics: Condensed Matter 29 (23), 234001, 2017	177	2017
Origin of the improved mobility and photo-bias stability in a double-channel metal oxide transistor HY Jung, Y Kang, AY Hwang, CK Lee, S Han, DH Kim, JU Bae, WS Shin, ... Scientific reports 4 (1), 3765, 2014	137	2014
Hydrogen evolution reaction at anion vacancy of two-dimensional transition-metal dichalcogenides: ab initio computational screening J Lee, S Kang, K Yim, KY Kim, HW Jang, Y Kang, S Han The Journal of Physical Chemistry Letters 9 (8), 2049-2055, 2018	122	2018
First-principles analysis of electron transport in K Krishnaswamy, B Himmetoglu, Y Kang, A Janotti, CG Van de Walle Physical Review B 95 (20), 205202, 2017	111	2017
Hydrogen Bistability as the Origin of Photo‐Bias‐Thermal Instabilities in Amorphous Oxide Semiconductors Y Kang, BD Ahn, JH Song, YG Mo, HH Nahm, S Han, JK Jeong Advanced Electronic Materials 1 (7), 1400006, 2015	100	2015
Intrinsic carrier mobility of cesium lead halide perovskites Y Kang, S Han Physical Review Applied 10 (4), 044013, 2018	95	2018
A band-gap database for semiconducting inorganic materials calculated with hybrid functional S Kim, M Lee, C Hong, Y Yoon, H An, D Lee, W Jeong, D Yoo, Y Kang, ... Scientific Data 7 (1), 387, 2020	79	2020
Role of Hyper-Reduced States in Hydrogen Evolution Reaction at Sulfur Vacancy in MoS₂ KY Kim, J Lee, S Kang, YW Son, HW Jang, Y Kang, S Han ACS Catalysis 8 (5), 4508-4515, 2018	49	2018
calculations on post-transition-metal oxides Y Kang, G Kang, HH Nahm, SH Cho, YS Park, S Han Physical Review B 89 (16), 165130, 2014	47	2014
Computational screening of indirect-gap semiconductors for potential photovoltaic absorbers Y Kang, Y Youn, S Han, J Park, CS Oh Chemistry of Materials 31 (11), 4072-4080, 2019	46	2019
Light-induced peroxide formation in ZnO: Origin of persistent photoconductivity Y Kang, HH Nahm, S Han Scientific reports 6 (1), 35148, 2016	41	2016
All-atom simulation of molecular orientation in vapor-deposited organic light-emitting diodes Y Youn, D Yoo, H Song, Y Kang, KY Kim, SH Jeon, Y Cho, K Chae, S Han Journal of Materials Chemistry C 6 (5), 1015-1022, 2018	39	2018
Reversible manipulation of photoconductivity caused by surface oxygen vacancies in perovskite stannates with ultraviolet light Y Lee, D Yoon, S Yu, H Sim, Y Park, YS Nam, KJ Kim, SY Choi, Y Kang, ... Advanced Materials 34 (5), 2107650, 2022	36	2022
Enhancement of Photoluminescence Quantum Yield and Stability in CsPbBr₃ Perovskite Quantum Dots by Trivalent Doping S Jung, JH Kim, JW Choi, JW Kang, SH Jin, Y Kang, M Song Nanomaterials 10 (4), 710, 2020	36	2020
Origin of degradation phenomenon under drain bias stress for oxide thin film transistors using IGZO and IGO channel layers JY Bak, Y Kang, S Yang, HJ Ryu, CS Hwang, S Han, SM Yoon Scientific Reports 5 (1), 7884, 2015	36	2015
Shape-shifting nanoparticles on a perovskite oxide for highly stable and active heterogeneous catalysis YH Kim, Y Kang, S Jo, H Jeong, D Neagu, J Myung Chemical Engineering Journal 441, 136025, 2022	33	2022
Ab initio calculation of ionization potential and electron affinity in solid-state organic semiconductors Y Kang, SH Jeon, Y Cho, S Han Physical Review B 93 (3), 035131, 2016	33	2016
Unveiling Electrochemical Reaction Pathways of CO₂ Reduction to C_N Species at S‐Vacancies of MoS₂ S Kang, S Han, Y Kang ChemSusChem 12 (12), 2671-2678, 2019	32	2019
Origin of electrical instabilities in self-aligned amorphous In–Ga–Zn–O thin-film transistors N On, Y Kang, A Song, B Du Ahn, HD Kim, JH Lim, KB Chung, S Han, ... IEEE Transactions on Electron Devices 64 (12), 4965-4973, 2017	31	2017
Large-scale computational identification of p-type oxide semiconductors by hierarchical screening Y Youn, M Lee, D Kim, JK Jeong, Y Kang, S Han Chemistry of Materials 31 (15), 5475-5483, 2019	30	2019

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