Takip et
Giuseppe Greco
Giuseppe Greco
CNR - IMM
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Alıntı yapanlar
Alıntı yapanlar
Yıl
Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices
F Roccaforte, P Fiorenza, G Greco, RL Nigro, F Giannazzo, F Iucolano, ...
Microelectronic Engineering 187, 66-77, 2018
5122018
Ohmic contacts to Gallium Nitride materials
G Greco, F Iucolano, F Roccaforte
Applied Surface Science 383, 324-345, 2016
3532016
An overview of normally-off GaN-based high electron mobility transistors
F Roccaforte, G Greco, P Fiorenza, F Iucolano
Materials 12 (10), 1599, 2019
3042019
Review of technology for normally-off HEMTs with p-GaN gate
G Greco, F Iucolano, F Roccaforte
Materials Science in Semiconductor Processing 78, 96-106, 2018
2892018
Recent advances on dielectrics technology for SiC and GaN power devices
F Roccaforte, P Fiorenza, G Greco, M Vivona, RL Nigro, F Giannazzo, ...
Applied Surface Science 301, 9-18, 2014
1942014
Challenges for energy efficient wide band gap semiconductor power devices
F Roccaforte, P Fiorenza, G Greco, RL Nigro, F Giannazzo, A Patti, ...
physica status solidi (a) 211 (9), 2063-2071, 2014
1502014
Ambipolar MoS2 Transistors by Nanoscale Tailoring of Schottky Barrier Using Oxygen Plasma Functionalization
F Giannazzo, G Fisichella, G Greco, S Di Franco, I Deretzis, A La Magna, ...
ACS Applied Materials & Interfaces 9 (27), 23164-23174, 2017
972017
Vertical transistors based on 2D materials: Status and prospects
F Giannazzo, G Greco, F Roccaforte, SS Sonde
Crystals 8 (2), 70, 2018
962018
Strain, Doping, and Electronic Transport of Large Area Monolayer MoS2 Exfoliated on Gold and Transferred to an Insulating Substrate
SE Panasci, E Schilirò, G Greco, M Cannas, FM Gelardi, S Agnello, ...
ACS Applied Materials & Interfaces 13 (26), 31248-31259, 2021
892021
Near-surface processing on AlGaN/GaN heterostructures: a nanoscale electrical and structural characterization
G Greco, F Giannazzo, A Frazzetto, V Raineri, F Roccaforte
Nanoscale research letters 6, 1-7, 2011
852011
Current transport in graphene/AlGaN/GaN vertical heterostructures probed at nanoscale
G Fisichella, G Greco, F Roccaforte, F Giannazzo
Nanoscale 6 (15), 8671-8680, 2014
832014
Effects of Annealing Treatments on the Properties of Al/Ti/p-GaN Interfaces for Normally OFF p-GaN HEMTs
FR Giuseppe Greco, Ferdinando Iucolano, Salvatore Di Franco, Corrado ...
IEEE Transactions on Electron Devices 63 (7), 2735 - 2741, 2016
772016
Critical issues for interfaces to p-type SiC and GaN in power devices
F Roccaforte, A Frazzetto, G Greco, F Giannazzo, P Fiorenza, RL Nigro, ...
Applied Surface Science 258 (21), 8324-8333, 2012
762012
Electro-structural evolution and Schottky barrier height in annealed Au/Ni contacts onto p-GaN
G Greco, P Prystawko, M Leszczyński, R Lo Nigro, V Raineri, F Roccaforte
Journal of applied physics 110 (12), 2011
762011
Correlation between microstructure and temperature dependent electrical behavior of annealed Ti/Al/Ni/Au Ohmic contacts to AlGaN/GaN heterostructures
F Iucolano, G Greco, F Roccaforte
Applied Physics Letters 103 (20), 2013
742013
Selective doping in silicon carbide power devices
F Roccaforte, P Fiorenza, M Vivona, G Greco, F Giannazzo
Materials 14 (14), 3923, 2021
662021
Thermal stability of the current transport mechanisms in Ni-based Ohmic contacts on n-and p-implanted 4H-SiC
M Vivona, G Greco, F Giannazzo, RL Nigro, S Rascunà, M Saggio, ...
Semiconductor Science and Technology 29 (7), 075018, 2014
632014
Channel Mobility in GaN Hybrid MOS-HEMT Using SiO2as Gate Insulator
P Fiorenza, G Greco, F Iucolano, A Patti, F Roccaforte
IEEE Transactions on Electron Devices 64 (7), 2893-2899, 2017
532017
Impact of contact resistance on the electrical properties of MoS2 transistors at practical operating temperatures
F Giannazzo, G Fisichella, A Piazza, S Di Franco, G Greco, S Agnello, ...
Beilstein journal of nanotechnology 8 (1), 254-263, 2017
512017
Epitaxial NiO gate dielectric on AlGaN/GaN heterostructures
F Roccaforte, G Greco, P Fiorenza, V Raineri, G Malandrino, R Lo Nigro
Applied Physics Letters 100 (6), 2012
512012
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