Kamu erişimi zorunlu olan makaleler - Giuseppe GrecoDaha fazla bilgi edinin
Hiçbir yerde sunulmuyor: 18
Ambipolar MoS2 Transistors by Nanoscale Tailoring of Schottky Barrier Using Oxygen Plasma Functionalization
F Giannazzo, G Fisichella, G Greco, S Di Franco, I Deretzis, A La Magna, ...
ACS Applied Materials & Interfaces 9 (27), 23164-23174, 2017
Zorunlu olanlar: European Commission
Direct Probing of Grain Boundary Resistance in Chemical Vapor Deposition‐Grown Monolayer MoS2 by Conductive Atomic Force Microscopy
F Giannazzo, M Bosi, F Fabbri, E Schilirò, G Greco, F Roccaforte
physica status solidi (RRL)–Rapid Research Letters 14 (2), 1900393, 2020
Zorunlu olanlar: Government of Italy
Barrier inhomogeneity in vertical Schottky diodes on free standing gallium nitride
F Roccaforte, F Giannazzo, A Alberti, M Spera, M Cannas, I Cora, B Pécz, ...
Materials Science in Semiconductor Processing 94, 164-170, 2019
Zorunlu olanlar: Government of Italy
Ti/Al ohmic contacts on AlGaN/GaN heterostructures with different defect density
G Greco, F Iucolano, C Bongiorno, F Giannazzo, M Krysko, M Leszczynski, ...
Applied surface science 314, 546-551, 2014
Zorunlu olanlar: Government of Italy
From Schottky to Ohmic graphene contacts to AlGaN/GaN heterostructures: Role of the AlGaN layer microstructure
G Fisichella, G Greco, F Roccaforte, F Giannazzo
Applied Physics Letters 105 (6), 2014
Zorunlu olanlar: Government of Italy
Conduction mechanisms at interface of AlN/SiN dielectric stacks with AlGaN/GaN heterostructures for normally-off high electron mobility transistors: Correlating device behavior …
G Greco, P Fiorenza, F Iucolano, A Severino, F Giannazzo, F Roccaforte
ACS applied materials & interfaces 9 (40), 35383-35390, 2017
Zorunlu olanlar: Government of Italy
Early Growth Stages of Aluminum Oxide (Al2O3) Insulating Layers by Thermal- and Plasma-Enhanced Atomic Layer Deposition on AlGaN/GaN Heterostructures
E Schiliro, P Fiorenza, G Greco, F Monforte, GG Condorelli, F Roccaforte, ...
ACS Applied Electronic Materials 4 (1), 406-415, 2021
Zorunlu olanlar: Government of Italy
Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition
E Schilirò, F Giannazzo, C Bongiorno, S Di Franco, G Greco, F Roccaforte, ...
Materials Science in Semiconductor Processing 97, 35-39, 2019
Zorunlu olanlar: Government of Italy
Growth and characterization of thin Al-rich AlGaN on bulk GaN as an emitter-base barrier for hot electron transistor
P Prystawko, F Giannazzo, M Krysko, J Smalc-Koziorowska, E Schilirò, ...
Materials Science in Semiconductor Processing 93, 153-157, 2019
Zorunlu olanlar: Government of Italy
Conductive Atomic Force Microscopy of Two‐Dimensional Electron Systems: From AlGaN/GaN Heterostructures to Graphene and MoS2
F Giannazzo, G Fisichella, G Greco, P Fiorenza, F Roccaforte
Conductive Atomic Force Microscopy: Applications in Nanomaterials, 163-185, 2017
Zorunlu olanlar: Government of Italy
Extensive Fermi‐Level Engineering for Graphene through the Interaction with Aluminum Nitrides and Oxides
A Sciuto, A La Magna, GGN Angilella, R Pucci, G Greco, F Roccaforte, ...
physica status solidi (RRL)–Rapid Research Letters 14 (2), 1900399, 2020
Zorunlu olanlar: Government of Italy
Temperature and time dependent electron trapping in Al2O3 thin films onto AlGaN/GaN heterostructures
P Fiorenza, E Schilirò, G Greco, M Vivona, M Cannas, F Giannazzo, ...
Applied Surface Science 579, 152136, 2022
Zorunlu olanlar: Government of Italy
Electrical properties of thermal oxide on 3C-SiC layers grown on silicon
P Fiorenza, G Greco, S Di Franco, F Giannazzo, S Monnoye, M Zielinski, ...
Materials Science Forum 963, 479-482, 2019
Zorunlu olanlar: European Commission
Fabrication and characterization of ohmic contacts to 3C-SiC layers grown on silicon
M Spera, G Greco, R Lo Nigro, S Di Franco, D Corso, P Fiorenza, ...
Materials Science Forum 963, 485-489, 2019
Zorunlu olanlar: European Commission
Aluminum Frenkel defects cause hysteresis in Al2O3/AlGaN capacitors
I Deretzis, P Fiorenza, T Fazio, E Schilirò, R Lo Nigro, G Greco, G Fisicaro, ...
Journal of Applied Physics 132 (16), 2022
Zorunlu olanlar: Government of Italy
Technologies for Normally‐off GaN HEMTs
G Greco, P Fiorenza, F Iucolano, F Roccaforte
Nitride Semiconductor Technology: Power Electronics and Optoelectronic …, 2020
Zorunlu olanlar: Government of Italy
Functional Near Infrared Spectroscopy System Validation for Simultaneous EEG-FNIRS Measurements
GC Giaconia, G Greco, L Mistretta, R Rizzo, A Merla, AM Chiarelli, ...
Applications in Electronics Pervading Industry, Environment and Society …, 2019
Zorunlu olanlar: European Commission
Current Transport Mechanisms in Au-Free Metallizations for CMOS Compatible GaN HEMT Technology
F Roccaforte, M Spera, S Di Franco, R Lo Nigro, P Fiorenza, F Giannazzo, ...
Materials Science Forum 1004, 725-730, 2020
Zorunlu olanlar: Government of Italy
Bir yerde sunuluyor: 37
An overview of normally-off GaN-based high electron mobility transistors
F Roccaforte, G Greco, P Fiorenza, F Iucolano
Materials 12 (10), 1599, 2019
Zorunlu olanlar: Government of Italy
Vertical transistors based on 2D materials: Status and prospects
F Giannazzo, G Greco, F Roccaforte, SS Sonde
Crystals 8 (2), 70, 2018
Zorunlu olanlar: Magyar Tudományos Akadémia
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