Takip et
Eric Carlson
Eric Carlson
Booz Allen Hamilton
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Başlık
Alıntı yapanlar
Alıntı yapanlar
Yıl
Pendeoepitaxial gallium nitride semiconductor layers on silcon carbide substrates
KJ Linthicum, T Gehrke, DB Thomson, EP Carlson, P Rajagopal, ...
US Patent 6,177,688, 2001
4742001
GaN thin films deposited via organometallic vapor phase epitaxy on α (6H)-SiC (0001) using high-temperature monocrystalline AlN buffer layers
TW Weeks Jr, MD Bremser, KS Ailey, E Carlson, WG Perry, RF Davis
Applied physics letters 67 (3), 401-403, 1995
3111995
Pendeoepitaxy of gallium nitride thin films
K Linthicum, T Gehrke, D Thomson, E Carlson, P Rajagopal, T Smith, ...
Applied Physics Letters 75 (2), 196-198, 1999
2601999
Cosmic ray protons in the inner galaxy and the galactic center gamma-ray excess
E Carlson, S Profumo
Physical Review D 90 (2), 023015, 2014
2162014
Method and apparatus for producing MIIIN columns and MIIIN materials grown thereon
JJ Cuomo, NM Williams, AD Hanser, EP Carlson, DT Thomas
US Patent 6,692,568, 2004
1912004
Ion implantation into gallium nitride
C Ronning, EP Carlson, RF Davis
Physics Reports 351 (5), 349-385, 2001
1842001
Pendeo-epitaxy-A new approach for lateral growth of gallium nitride structures
TS Zheleva, SA Smith, DB Thomson, T Gehrke, KJ Linthicum, ...
MRS Online Proceedings Library (OPL) 537, G3. 38, 1998
1591998
Antihelium from dark matter
E Carlson, A Coogan, T Linden, S Profumo, A Ibarra, S Wild
Physical Review D 89 (7), 076005, 2014
1112014
MIIIN based materials and methods and apparatus for producing same
JJ Cuomo, NM Williams, AD Hanser, EP Carlson, DT Thomas
US Patent 6,784,085, 2004
942004
Optical activation of Be implanted into GaN
C Ronning, EP Carlson, DB Thomson, RF Davis
Applied physics letters 73 (12), 1622-1624, 1998
781998
Undoped and doped GaN thin films deposited on high-temperature monocrystalline AlN buffer layers on vicinal and on-axis α (6H)–SiC (0001) substrates via organometallic vapor …
TW Weeks Jr, MD Bremser, KS Ailey, E Carlson, WG Perry, EL Piner, ...
Journal of materials research 11 (4), 1011-1018, 1996
641996
Amorphous boron coatings produced with vacuum arc deposition technology
CC Klepper, RC Hazelton, EJ Yadlowsky, EP Carlson, MD Keitz, ...
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 20 (3 …, 2002
612002
Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on silicon carbide substrates by lateral growth from sidewalls of masked posts, and gallium nitride …
KJ Linthicum, T Gehrke, DB Thomson, EP Carlson, P Rajagopal, ...
US Patent 6,376,339, 2002
552002
Process routes for low defect-density GaN on various substrates employing pendeo-epitaxial growth techniques
KJ Linthicum, T Gehrke, DB Thomson, KM Tracy, EP Carlson, TP Smith, ...
MRS Online Proceedings Library (OPL) 537, G4. 9, 1998
491998
Current and future directions in power electronic devices and circuits based on wide band-gap semiconductors
IC Kizilyalli, YA Xu, E Carlson, J Manser, DW Cunningham
2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2017
472017
X-ray photoelectron spectroscopy analysis of GaN/(0001) AlN and AlN/(0001) GaN growth mechanisms
SW King, EP Carlson, RJ Therrien, JA Christman, RJ Nemanich, RF Davis
Journal of applied physics 86 (10), 5584-5593, 1999
471999
Wafer‐scale epitaxial lift‐off of GaN using bandgap‐selective photoenhanced wet etching
C Youtsey, R McCarthy, R Reddy, K Forghani, A Xie, E Beam, J Wang, ...
physica status solidi (b) 254 (8), 1600774, 2017
462017
Peak filtering, peak annotation, and wildcard search for glycoproteomics
A Roushan, GM Wilson, D Kletter, KI Sen, W Tang, YJ Kil, E Carlson, ...
Molecular & Cellular Proteomics 20, 2021
452021
Ion implantation of epitaxial GaN films: damage, doping and activation
N Parikh, A Suvkhanov, M Lioubtchenko, E Carlson, M Bremser, D Bray, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1997
411997
Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates
KJ Linthicum, T Gehrke, DB Thomson, EP Carlson, P Rajagopal, ...
US Patent 6,462,355, 2002
402002
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