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MirHasan Seyidov
MirHasan Seyidov
gtu.edu.tr üzerinde doğrulanmış e-posta adresine sahip - Ana Sayfa
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Alıntı yapanlar
Alıntı yapanlar
Yıl
Negative thermal expansion due to negative area compressibility in TlGaSe2 semiconductor with layered crystalline structure
MHY Seyidov, RA Suleymanov
Journal of Applied Physics 108 (6), 2010
512010
The effect of impurities on the phase transitions in the ferroelectric semiconductors TlInS2 and TlGaSe2
SS Babaev, E Başaran, TG Mammadov, FA Mikailov, FM Salehli, ...
Journal of Physics: Condensed Matter 17 (12), 1985, 2005
512005
Dielectric susceptibility behaviour in the incommensurate phase of TlInS2
FA Mikailov, E Başaran, TG Mammadov, MY Seyidov, E Şentürk
Physica B: Condensed Matter 334 (1-2), 13-20, 2003
432003
Memory effect in ferroelectric-semiconductor with incommensurate phase TlGaSe2
VP Aliyev, SS Babayev, TG Mammadov, MHY Seyidov, RA Suleymanov
Solid state communications 128 (1), 25-28, 2003
352003
Model of a sequence of structural phase transitions in a layer TlInS2 crystal
RA Suleimanov, MY Seidov, FM Salaev, FA Mikailov
Physics of the solid state 35 (2), 177-180, 1993
341993
Ultrasonic investigations of phase transitions in TlInS2 and TlGaSe2 layered crystals
YV Ilisavskii, VM Sternin, RA Suleimanov, FM Salaev, M Seidov
Soviet physics. Solid state 33 (1), 57-60, 1991
331991
The effect of thermal annealing on impurity states in ferroelectric-semiconductor TlGaSe2 within the incommensurate phase
MHY Seyidov, E Coskun, Y Sahin, R Khamoev, RA Suleymanov
Semiconductor science and technology 21 (2), 171, 2006
282006
Dielectric spectroscopy and nonequilibrium phase transitions in TlGaSe2 layered crystals
F Salehli, Y Bakış, MHY Seyidov, RA Suleymanov
Semiconductor science and technology 22 (8), 843, 2007
272007
Electret states and current oscillations in the ferroelectric semiconductor TlGaSe2
MHY Seyidov, Y Sahin, D Erbahar, RA Suleymanov
physica status solidi (a) 203 (15), 3781-3787, 2006
252006
Elastic properties of layered crystals TlInS2 and TlGaSe2
RA Suleymanov, MY Seidov, FM Salaev
Fiz. Tverd. Tela. 33, 1797-1800, 1991
24*1991
Neutron diffraction study of the crystal structure of TlInSe2 at high pressure
NT Mamedov, SH Jabarov, DP Kozlenko, NA Ismayilova, MY Seyidov, ...
International Journal of Modern Physics B 33 (15), 1950149, 2019
232019
Identification of intrinsic deep level defects responsible for electret behavior in TlGaSe2 layered semiconductor
MHY Seyidov, FA Mikailzade, T Uzun, AP Odrinsky, E Yakar, VB Aliyeva, ...
Physica B: Condensed Matter 483, 82-89, 2016
222016
The model of sequence of phase transitions in layered TlInS2 crystals
RA Suleymanov, MY Seidov, FM Salayev, MA Mikailov
Fiz. Tverd. Tela 35, 348-354, 1993
221993
Photoinduced current transient spectroscopy of TlInS2 layered crystals doped with Er, B, and Tb impurities
MHY Seyidov, RA Suleymanov, AP Odrinsky, AI Nadjafov, TG Mammadov, ...
Japanese journal of applied physics 50 (5S2), 05FC08, 2011
212011
Characterization of deep level defects and thermally stimulated depolarization phenomena in La-doped TlInS2 layered semiconductor
MHY Seyidov, RA Suleymanov, FA Mikailzade, EO Kargın, AP Odrinsky
Journal of Applied Physics 117 (22), 2015
192015
Electret states and the phase transition in a surface layer of the TlGaSe2 ferroelectric semiconductor
MHY Seyidov, RA Suleymanov, R Khamoev
Physics of the Solid State 48, 1346-1350, 2006
192006
MODEL OF PHASE-TRANSITION SEQUENCES IN THE TLINS2 LAYERED CRYSTAL
RA Suleimanov, MY Seidov, FM Salaev, FA Mikailov
FIZIKA TVERDOGO TELA 35 (2), 348-354, 1993
181993
Effect of illumination on negative linear expansion of TlGaSe2 layered crystals
MHY Seyidov, RA Suleymanov, E Yakar, NA Abdullayev, TG Mammadov
Journal of Physics and Chemistry of Solids 69 (10), 2544-2547, 2008
172008
Mechanisms of current flow in p-TlGaSe2 single crystals
MHY Seyidov, Y Sahin, MH Aslan, RA Suleymanov
Semiconductor science and technology 21 (12), 1633, 2006
172006
Thermal expansion and memory effect in the ferroelectric-semiconductor TlGaSe2
MHY Seyidov, RA Suleymanov, E Yakar
Journal of Applied Physics 106 (2), 2009
162009
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