| Surface passivation and morphology of GaAs (1 0 0) treated in HCl-isopropanol solution VL Alperovich, OE Tereshchenko, NS Rudaya, DV Sheglov, AV Latyshev, ... Applied Surface Science 235 (3), 249-259, 2004 | 102 | 2004 |
| Surface photovoltaic effect in solids. Theory and experiment for interband transitions in gallium arsenide V Al’perovich, V Belinicher, V Novikov, A Terekhov Zh Eksp Teor Fiz 80, 2298-2312, 1981 | 65 | 1981 |
| Determination of built-in electric fields in delta-doped GaAs structures by phase-sensitive photoreflectance VL Alperovich, AS Jaroshevich, HE Scheibler, AS Terekhov Solid-state electronics 37 (4-6), 657-660, 1994 | 58 | 1994 |
| The influence of phonons and impurities on the broadening of excitonic spectra in gallium arsenide VL Alperovich, VM Zaletin, AF Kravchenko, AS Terekhov physica status solidi (b) 77 (2), 465-472, 1976 | 58 | 1976 |
| Domination of adatom-induced over defect-induced surface states on p-type GaAs (Cs, O) at room temperature VL Alperovich, AG Paulish, AS Terekhov Physical Review B 50 (8), 5480, 1994 | 48 | 1994 |
| Photon-enhanced thermionic emission from p-GaAs with nonequilibrium Cs overlayers AG Zhuravlev, AS Romanov, VL Alperovich Applied Physics Letters 105 (25), 2014 | 41 | 2014 |
| Semiconductor surfaces with negative electron affinity B VV, P AA, Z AG, S AN, A IO, T OE, A VL, S HE e-Journal of Surface Science and Nanotechnology 5, 80-88, 2007 | 37 | 2007 |
| Cesium-induced surface conversion: From As-rich to Ga-rich GaAs (001) at reduced temperatures OE Tereshchenko, VL Alperovich, AG Zhuravlev, AS Terekhov, D Paget Physical Review B—Condensed Matter and Materials Physics 71 (15), 155315, 2005 | 34 | 2005 |
| Evolution of electronic properties at the p‐GaAs(Cs,O) surface during negative electron affinity state formation VL Alperovich, AG Paulish, HE Scheibler, AS Terekhov Applied physics letters 66 (16), 2122-2124, 1995 | 34 | 1995 |
| Surface photovoltaic effect in gallium arsenide VL Alperovich, VI Belinicher, VN Novikov, AS Terekhov ZhETF Pisma Redaktsiiu 31, 581-584, 1980 | 30 | 1980 |
| Decrease in the bond energy of arsenic atoms on the GaAs (100)-(2× 4)/c (2× 8) surface due to the effect of adsorbed cesium OE Tereshchenko, VL Alperovich, AS Terekhov Journal of Experimental and Theoretical Physics Letters 79, 131-135, 2004 | 29 | 2004 |
| New material for photoemission electron source: semiconductor alloy InGaAsP grown on GaAs substrate VL Alperovich, YB Bolkhovityanov, AG Paulish, AS Terekhov Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 1994 | 28 | 1994 |
| Step-terraced morphology of GaAs (001) substrates prepared at quasiequilibrium conditions VL Alperovich, IO Akhundov, NS Rudaya, DV Sheglov, EE Rodyakina, ... Applied Physics Letters 94 (10), 2009 | 27 | 2009 |
| Unpinned behavior of the electronic properties of a p-GaAs (Cs, O) surface at room temperature VL Alperovich, AG Paulish, AS Terekhov Surface science 331, 1250-1255, 1995 | 27 | 1995 |
| Electron emission from GaAs (Cs, O): Transition from negative to positive effective affinity AG Zhuravlev, VS Khoroshilov, VL Alperovich Applied Surface Science 483, 895-900, 2019 | 26 | 2019 |
| Monte Carlo simulation of GaAs (0 0 1) surface smoothing in equilibrium conditions DM Kazantsev, IO Akhundov, AN Karpov, NL Shwartz, VL Alperovich, ... Applied Surface Science 333, 141-146, 2015 | 25 | 2015 |
| Structural and electronic transformations at the Cs/GaAs (100) interface OE Tereshchenko, VS Voronin, HE Scheibler, VL Alperovich, ... Surface science 507, 51-56, 2002 | 25 | 2002 |
| Temperature dependence of photon-enhanced thermionic emission from GaAs surface with nonequilibrium Cs overlayers AG Zhuravlev, VL Alperovich Applied Surface Science 395, 3-8, 2017 | 23 | 2017 |
| Composition and structure of chemically prepared GaAs (1 1 1) A and (1 1 1) B surfaces OE Tereshchenko, VL Alperovich, AS Terekhov Surface science 600 (3), 577-582, 2006 | 20 | 2006 |
| Diffusion and ordering of Cs adatoms on GaAs (001) studied by reflectance anisotropy spectroscopy VL Alperovich, D Paget Physical Review B 56 (24), R15565, 1997 | 20 | 1997 |
