Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage KD Chabak, N Moser, AJ Green, DE Walker, SE Tetlak, E Heller, ...
Applied Physics Letters 109 (21), 2016
401 2016 AJ Green, KD Chabak, M Baldini, N Moser, R Gilbert, RC Fitch, G Wagner, ...
IEEE Electron Device Letters 38 (6), 790-793, 2017
334 2017 Donors and deep acceptors in β-Ga2O3 AT Neal, S Mou, S Rafique, H Zhao, E Ahmadi, JS Speck, KT Stevens, ...
Applied Physics Letters 113 (6), 2018
301 2018 Recessed-Gate Enhancement-Mode KD Chabak, JP McCandless, NA Moser, AJ Green, K Mahalingam, ...
IEEE Electron device letters 39 (1), 67-70, 2017
261 2017 Ge-Doped N Moser, J McCandless, A Crespo, K Leedy, A Green, A Neal, S Mou, ...
IEEE Electron Device Letters 38 (6), 775-778, 2017
228 2017 Highly conductive homoepitaxial Si-doped Ga2O3 films on (010) β-Ga2O3 by pulsed laser deposition KD Leedy, KD Chabak, V Vasilyev, DC Look, JJ Boeckl, JL Brown, ...
Applied Physics Letters 111 (1), 2017
200 2017 Lateral β-Ga2O3 field effect transistors KD Chabak, KD Leedy, AJ Green, S Mou, AT Neal, T Asel, ER Heller, ...
Semiconductor Science and Technology 35 (1), 013002, 2019
144 2019 High pulsed current density β-Ga2O3 MOSFETs verified by an analytical model corrected for interface charge NA Moser, JP McCandless, A Crespo, KD Leedy, AJ Green, ER Heller, ...
Applied Physics Letters 110 (14), 2017
97 2017 Comparison of gate and drain current detection of hydrogen at room temperature with AlGaN∕ GaN high electron mobility transistors HT Wang, BS Kang, F Ren, RC Fitch, JK Gillespie, N Moser, G Jessen, ...
Applied Physics Letters 87 (17), 2005
83 2005 RF power performance of Sc (al, Ga) N/GaN HEMTs at Ka-band AJ Green, N Moser, NC Miller, KJ Liddy, M Lindquist, M Elliot, JK Gillespie, ...
IEEE Electron Device Letters 41 (8), 1181-1184, 2020
67 2020 Thin channel β-Ga2O3 MOSFETs with self-aligned refractory metal gates KJ Liddy, AJ Green, NS Hendricks, ER Heller, NA Moser, KD Leedy, ...
Applied Physics Express 12 (12), 126501, 2019
51 2019 Sub-micron gallium oxide radio frequency field-effect transistors KD Chabak, DE Walker, AJ Green, A Crespo, M Lindquist, K Leedy, ...
2018 IEEE MTT-S International Microwave Workshop Series on Advanced …, 2018
49 2018 Pulsed Power Performance of β -Ga₂O₃ MOSFETs at L-Band NA Moser, T Asel, KJ Liddy, M Lindquist, NC Miller, S Mou, A Neal, ...
IEEE Electron Device Letters 41 (7), 989-992, 2020
45 2020 Effective suppression of IV knee walk-out in AlGaN/GaN HEMTs for pulsed-IV pulsed-RF with a large signal network analyzer SJ Doo, P Roblin, GH Jessen, RC Fitch, JK Gillespie, NA Moser, A Crespo, ...
IEEE Microwave and wireless components letters 16 (12), 681-683, 2006
44 2006 Improved oxide passivation of AlGaN∕ GaN high electron mobility transistors BP Gila, M Hlad, AH Onstine, R Frazier, GT Thaler, A Herrero, E Lambers, ...
Applied Physics Letters 87 (16), 2005
43 2005 Toward high voltage radio frequency devices in β-Ga2O3 N Moser, K Liddy, A Islam, N Miller, K Leedy, T Asel, S Mou, A Green, ...
Applied Physics Letters 117 (24), 2020
41 2020 Hydrogen-induced reversible changes in drain current in BS Kang, R Mehandru, S Kim, F Ren, RC Fitch, JK Gillespie, N Moser, ...
Applied physics letters 84 (23), 4635-4637, 2004
40 2004 Toward realization of Ga2 O3 for power electronics applications G Jessen, K Chabak, A Green, J McCandless, S Tetlak, K Leedy, R Fitch, ...
2017 75th Annual Device Research Conference (DRC), 1-2, 2017
38 2017 Self-Heating Characterization of 2 O3 Thin-Channel MOSFETs by Pulsed NA Blumenschein, NA Moser, ER Heller, NC Miller, AJ Green, A Popp, ...
IEEE Transactions on Electron Devices 67 (1), 204-211, 2019
33 2019 High performance 0.14 μm gate-length AlGaN/GaN power HEMTs on SiC GH Jessen, RC Fitch, JK Gillespie, GD Via, NA Moser, MJ Yannuzzi, ...
IEEE Electron Device Letters 24 (11), 677-679, 2003
33 2003 