| Reliability of analog resistive switching memory for neuromorphic computing M Zhao, B Gao, J Tang, H Qian, H Wu Applied Physics Reviews 7 (1), 2020 | 296 | 2020 |
| A threshold switching selector based on highly ordered Ag nanodots for X‐point memory applications Q Hua, H Wu, B Gao, M Zhao, Y Li, X Li, X Hou, MF Chang, P Zhou, ... Advanced Science 6 (10), 1900024, 2019 | 132 | 2019 |
| Investigation of statistical retention of filamentary analog RRAM for neuromophic computing M Zhao, H Wu, B Gao, Q Zhang, W Wu, S Wang, Y Xi, D Wu, N Deng, ... 2017 IEEE International Electron Devices Meeting (IEDM), 39.4. 1-39.4. 4, 2017 | 103 | 2017 |
| Memristor-based analogue computing for brain-inspired sound localization with in situ training B Gao, Y Zhou, Q Zhang, S Zhang, P Yao, Y Xi, Q Liu, M Zhao, W Zhang, ... Nature communications 13 (1), 2026, 2022 | 100 | 2022 |
| Characterizing endurance degradation of incremental switching in analog RRAM for neuromorphic systems M Zhao, H Wu, B Gao, X Sun, Y Liu, P Yao, Y Xi, X Li, Q Zhang, K Wang, ... 2018 IEEE International Electron Devices Meeting (IEDM), 20.2. 1-20.2. 4, 2018 | 71 | 2018 |
| Impacts of state instability and retention failure of filamentary analog RRAM on the performance of deep neural network Y Xiang, P Huang, Y Zhao, M Zhao, B Gao, H Wu, H Qian, X Liu, J Kang IEEE Transactions on Electron Devices 66 (11), 4517-4522, 2019 | 48 | 2019 |
| Endurance and retention degradation of intermediate levels in filamentary analog RRAM M Zhao, B Gao, Y Xi, F Xu, H Wu, H Qian IEEE Journal of the Electron Devices Society 7, 1239-1247, 2019 | 29 | 2019 |
| Impact and quantization of short-term relaxation effect in analog RRAM Y Xi, B Gao, J Tang, X Mu, F Xu, P Yao, X Li, W Zhang, M Zhao, H Qian, ... 2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-4, 2020 | 16 | 2020 |
| Reliability perspective on neuromorphic computing based on analog RRAM H Wu, M Zhao, Y Liu, P Yao, Y Xi, X Li, W Wu, Q Zhang, J Tang, B Gao, ... 2019 IEEE International Reliability Physics Symposium (IRPS), 1-4, 2019 | 16 | 2019 |
| Crossbar-level retention characterization in analog RRAM array-based computation-in-memory system M Zhao, B Gao, P Yao, Q Zhang, Y Zhou, J Tang, H Qian, H Wu IEEE Transactions on Electron Devices 68 (8), 3813-3818, 2021 | 13 | 2021 |
| Ratio-based multi-level resistive memory cells MA Lastras-Montaño, O Del Pozo-Zamudio, L Glebsky, M Zhao, H Wu, ... Scientific reports 11 (1), 1351, 2021 | 12 | 2021 |
| Compact reliability model of analog RRAM for computation-in-memory device-to-system codesign and benchmark Y Liu, M Zhao, B Gao, R Hu, W Zhang, S Yang, P Yao, F Xu, Y Xi, ... IEEE Transactions on Electron Devices 68 (6), 2686-2692, 2021 | 11 | 2021 |
| Application of mathematical morphology operation with memristor-based computation-in-memory architecture for detecting manufacturing defects Y Zhou, B Gao, Q Zhang, P Yao, Y Geng, X Li, W Sun, M Zhao, Y Xi, ... Fundamental Research 2 (1), 123-130, 2022 | 7 | 2022 |
| Threshold Switching Selectors: A Threshold Switching Selector Based on Highly Ordered Ag Nanodots for X‐Point Memory Applications (Adv. Sci. 10/2019) Q Hua, H Wu, B Gao, M Zhao, Y Li, X Li, X Hou, MF Chang, P Zhou, ... Advanced Science 6 (10), 1970058, 2019 | 6 | 2019 |
| Identifying relaxation and random telegraph noises in filamentary analog RRAM for neuromorphic computing Q Hu, B Gao, J Tang, Z Hao, P Yao, Y Lin, Y Xi, M Zhao, J Chen, H Qian, ... 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2021 | 5 | 2021 |
| Intelligent computing with RRAM P Yao, W Zhang, M Zhao, Y Lin, W Wu, B Gao, H Qian, H Wu 2019 IEEE 11th International Memory Workshop (IMW), 1-4, 2019 | 3 | 2019 |
| Impact of switching window on endurance degradation in analog RRAM M Zhao, H Wu, B Gao, Y Liu, P Yao, Y Xi, W Wu, X Li, Q Zhang, N Deng, ... 2019 Electron Devices Technology and Manufacturing Conference (EDTM), 267-269, 2019 | 3 | 2019 |
| The impact of endurance degradation in analog RRAM for in-situ training Y Liu, B Gao, M Zhao, H Wu, H Qian 2019 IEEE 26th International Symposium on Physical and Failure Analysis of …, 2019 | 2 | 2019 |
Huaqiang WuTsinghua University, Cornell UniversityПідтверджена електронна адреса в tsinghua.edu.cn