| Effect of annealing on chemical, structural and electrical properties of Au/Gd2O3/n-GaN heterostructure with a high-k rare-earth oxide interlayer CV Prasad, MSP Reddy, VR Reddy, C Park Applied Surface Science 427, 670-677, 2018 | 58 | 2018 |
| Surface chemical states, electrical and carrier transport properties of Au/ZrO2/n-GaN MIS junction with a high-k ZrO2 as an insulating layer VR Reddy, CV Prasad Materials Science and Engineering: B 231, 74-80, 2018 | 44 | 2018 |
| Review on interface engineering of low leakage current and on-resistance for high-efficiency Ga2O3-based power devices CV Prasad, YS Rim Materials Today Physics 27, 100777, 2022 | 40 | 2022 |
| Barrier Parameters and Current Transport Characteristics of Ti/p-InP Schottky Junction Modified Using Orange G (OG) Organic Interlayer K Sreenu, C Venkata Prasad, V Rajagopal Reddy Journal of Electronic Materials 46, 5746-5754, 2017 | 38 | 2017 |
| On the nature of majority and minority traps in β-Ga2O3: A review M Labed, N Sengouga, CV Prasad, M Henini, YS Rim Materials Today Physics 36, 101155, 2023 | 37 | 2023 |
| Ga2O3-based X-ray detector and scintillators: A review CV Prasad, M Labed, MTAS Shaikh, JY Min, THV Nguyen, W Song, ... Materials Today Physics 35, 101095, 2023 | 36 | 2023 |
| Interface engineering of p-type quaternary metal oxide semiconductor interlayer-embedded β-Ga2O3 Schottky barrier diode CV Prasad, JH Park, JY Min, W Song, M Labed, Y Jung, S Kyoung, S Kim, ... Materials Today Physics 30, 100932, 2023 | 29 | 2023 |
| Electrical and carrier transport properties of the Au/Y2O3/n-GaN metal-insulator-semiconductor (MIS) diode with rare-earth oxide interlayer C Venkata Prasad, V Rajagopal Reddy, CJ Choi Applied Physics A 123, 1-10, 2017 | 22 | 2017 |
| Charge-carrier engineering of staggered-gap p-CuAlO2/β-Ga2O3 bipolar heterojunction for self-powered photodetector with exceptional linear dynamic range and stability CV Prasad, M Labed, JH Park, KJ Kim, YS Rim Materials Today Physics 40, 101327, 2024 | 21 | 2024 |
| Electrical and carrier transport properties of Ti/α-amylase/p-InP MPS junction with a α-amylase polymer interlayer VR Reddy, CV Prasad, V Janardhanam, CJ Choi Journal of Materials Science: Materials in Electronics 32, 8092-8105, 2021 | 21 | 2021 |
| Device engineering of p-CuAlO2/β-Ga2O3 interface: A staggered-gap band-alignment CV Prasad, M Labed, MTAS Shaikh, JY Min, THV Nguyen, W Song, ... Materials Today Advances 19, 100402, 2023 | 11 | 2023 |
| Chemical, electrical and carrier transport properties of Au/cytosine/undoped-InP MPS junction with a cytosine polymer VR Reddy, CV Prasad, KR Reddy Solid State Sciences 97, 105987, 2019 | 10 | 2019 |
| Multilevel reset dependent set of a biodegradable memristor with physically transient MTAS Shaikh, THV Nguyen, HJ Jeon, CV Prasad, KJ Kim, ES Jo, S Kim, ... Advanced Science 11 (4), 2306206, 2024 | 8 | 2024 |
| Non-damaging growth and band alignment of p-type NiO/β-Ga 2 O 3 heterojunction diodes for high power applications JY Min, M Labed, CV Prasad, JY Hong, YK Jung, YS Rim Journal of Materials Chemistry C 12 (29), 11020-11032, 2024 | 6 | 2024 |
| Reduction of Fermi-Level Pinning and Controlling of Ni/β-Ga2O3 Schottky Barrier Height Using an Ultrathin HfO2 Interlayer M Labed, JY Min, ES Jo, N Sengouga, C Venkata Prasad, YS Rim ACS Applied Electronic Materials 5 (6), 3198-3205, 2023 | 4 | 2023 |
| Chemical States, Structural, Electrical and Current Phenomenon Properties of a Au/Cobalt Phthalocyanine/Undoped-InP MPS-Type Diode with a CoPc Interlayer A Usha Rani, V Rajagopal Reddy, C Venkata Prasad, A Ashok Kumar Journal of Inorganic and Organometallic Polymers and Materials 34 (8), 3880-3892, 2024 | 3 | 2024 |
| Tunneling via surface dislocation in W/β-Ga2O3 Schottky barrier diodes M Labed, JY Min, AB Slim, N Sengouga, CV Prasad, S Kyoung, YS Rim Journal of Semiconductors 44 (7), 072801, 2023 | 3 | 2023 |
| Effect of biologically synthesized iron-oxide nanoparticles insulating layer on current-voltage characteristics of Ni/Cr/Ni/n-GaN Schottky junction V Manjunath, M Vani, PR Prasad, CV Prasad, S Alhammadi, AA Ghfar, ... Materials Science and Engineering: B 299, 116908, 2024 | 2 | 2024 |
| 2D Embedded Ultrawide Bandgap Devices for Extreme Environment Applications M Labed, JY Moon, SI Kim, JH Park, JS Kim, C Venkata Prasad, SH Bae, ... ACS nano 18 (44), 30153-30183, 2024 | 1 | 2024 |
| Bioresorbable Resistive Switching Device Based on Organic/Inorganic Hybrid Structure for Transient Memory Applications THV Nguyen, MTAS Shaikh, HJ Jeon, TTH Vu, CV Prasad, M Labed, ... Advanced Electronic Materials 10 (5), 2300759, 2024 | 1 | 2024 |
Chel-Jong ChoiJeonbuk National UniversityПідтверджена електронна адреса в jbnu.ac.kr
