| In situ atomic-scale imaging of electrochemical lithiation in silicon XH Liu, JW Wang, S Huang, F Fan, X Huang, Y Liu, S Krylyuk, J Yoo, ... Nature nanotechnology 7 (11), 749-756, 2012 | 709 | 2012 |
| Electric-field induced structural transition in vertical MoTe2- and Mo1–xWxTe2-based resistive memories F Zhang, H Zhang, S Krylyuk, CA Milligan, Y Zhu, DY Zemlyanov, ... Nature materials 18 (1), 55-61, 2019 | 432 | 2019 |
| Characterization of Few-Layer 1T′ MoTe2 by Polarization-Resolved Second Harmonic Generation and Raman Scattering R Beams, LG Cançado, S Krylyuk, I Kalish, B Kalanyan, AK Singh, ... ACS nano 10 (10), 9626-9636, 2016 | 190 | 2016 |
| Photocurrent detection of the orbital angular momentum of light Z Ji, W Liu, S Krylyuk, X Fan, Z Zhang, A Pan, L Feng, A Davydov, ... Science 368 (6492), 763-767, 2020 | 185 | 2020 |
| Electrolyte stability determines scaling limits for solid-state 3D Li ion batteries D Ruzmetov, VP Oleshko, PM Haney, HJ Lezec, K Karki, KH Baloch, ... Nano letters 12 (1), 505-511, 2012 | 160 | 2012 |
| Tapering Control of Si Nanowires Grown from SiCl4 at Reduced Pressure S Krylyuk, AV Davydov, I Levin ACS nano 5 (1), 656-664, 2011 | 119 | 2011 |
| Ultimate bending strength of Si nanowires G Stan, S Krylyuk, AV Davydov, I Levin, RF Cook Nano letters 12 (5), 2599-2604, 2012 | 102 | 2012 |
| The structural phases and vibrational properties of Mo1− xWxTe2 alloys SM Oliver, R Beams, S Krylyuk, I Kalish, AK Singh, A Bruma, F Tavazza, ... 2D Materials 4 (4), 045008, 2017 | 87 | 2017 |
| Probing the Optical Properties and Strain-Tuning of Ultrathin Mo1–xWxTe2 B Aslan, IM Datye, MJ Mleczko, K Sze Cheung, S Krylyuk, A Bruma, ... Nano letters 18 (4), 2485-2491, 2018 | 79 | 2018 |
| Nanoscale Heterogeneities in Monolayer MoSe2 Revealed by Correlated Scanning Probe Microscopy and Tip-Enhanced Raman Spectroscopy KKH Smithe, AV Krayev, CS Bailey, HR Lee, E Yalon, B Aslan, ... ACS Applied Nano Materials 1 (2), 572-579, 2017 | 75 | 2017 |
| Hexagonal MoTe2 with Amorphous BN Passivation Layer for Improved Oxidation Resistance and Endurance of 2D Field Effect Transistors B Sirota, N Glavin, S Krylyuk, AV Davydov, AA Voevodin Scientific reports 8 (1), 8668, 2018 | 74 | 2018 |
| Electron Microscopy Observation of TiO2 Nanocrystal Evolution in High-Temperature Atomic Layer Deposition J Shi, Z Li, A Kvit, S Krylyuk, AV Davydov, X Wang Nano letters 13 (11), 5727-5734, 2013 | 61 | 2013 |
| Compressive stress effect on the radial elastic modulus of oxidized Si nanowires G Stan, S Krylyuk, AV Davydov, RF Cook Nano letters 10 (6), 2031-2037, 2010 | 55 | 2010 |
| Surface effects on the elastic modulus of Te nanowires G Stan, S Krylyuk, AV Davydov, M Vaudin, LA Bendersky, RF Cook Applied Physics Letters 92 (24), 2008 | 55 | 2008 |
| Self-driven highly responsive pn junction InSe heterostructure near-infrared light detector C Patil, C Dong, H Wang, BM Nouri, S Krylyuk, H Zhang, AV Davydov, ... Photonics Research 10 (7), A97-A105, 2022 | 48 | 2022 |
| Formation of large-area GaN nanostructures with controlled geometry and morphology using top-down fabrication scheme D Paramanik, A Motayed, GS Aluri, JY Ha, S Krylyuk, AV Davydov, M King, ... Journal of Vacuum Science & Technology B 30 (5), 2012 | 44 | 2012 |
| Selective streptavidin bioconjugation on silicon and silicon carbide nanowires for biosensor applications EH Williams, JA Schreifels, MV Rao, AV Davydov, VP Oleshko, NJ Lin, ... Journal of Materials Research 28 (1), 68-77, 2013 | 41 | 2013 |
| Heterojunction tunnel triodes based on two-dimensional metal selenide and three-dimensional silicon J Miao, C Leblanc, J Wang, Y Gu, X Liu, B Song, H Zhang, S Krylyuk, ... Nature Electronics 5 (11), 744-751, 2022 | 39 | 2022 |
| Bending manipulation and measurements of fracture strength of silicon and oxidized silicon nanowires by atomic force microscopy G Stan, S Krylyuk, AV Davydov, RF Cook Journal of Materials Research 27 (3), 562-570, 2012 | 39 | 2012 |
| Phonon anharmonicity in bulk Td-MoTe2 J Joshi, IR Stone, R Beams, S Krylyuk, I Kalish, AV Davydov, PM Vora Applied physics letters 109 (3), 2016 | 38 | 2016 |