From ferroelectric material optimization to neuromorphic devices T Mikolajick, MH Park, L Begon‐Lours, S Slesazeck
Advanced Materials 35 (37), 2206042, 2023
104 2023 Back-end, CMOS-compatible ferroelectric field-effect transistor for synaptic weights M Halter, L Bégon-Lours, V Bragaglia, M Sousa, BJ Offrein, S Abel, ...
ACS applied materials & interfaces 12 (15), 17725-17732, 2020
104 2020 Ferroelectric control of a Mott insulator H Yamada, M Marinova, P Altuntas, A Crassous, L Bégon-Lours, S Fusil, ...
Scientific reports 3 (1), 2834, 2013
81 2013 Roadmap on ferroelectric hafnia-and zirconia-based materials and devices JPB Silva, R Alcala, UE Avci, N Barrett, L Bégon-Lours, M Borg, S Byun, ...
APL Materials 11 (8), 2023
75 2023 Stabilization of phase-pure rhombohedral L Bégon-Lours, M Mulder, P Nukala, S De Graaf, YA Birkhölzer, B Kooi, ...
Physical Review Materials 4 (4), 043401, 2020
51 2020 Scaled, Ferroelectric Memristive Synapse for Back‐End‐of‐Line Integration with Neuromorphic Hardware L Bégon‐Lours, M Halter, FM Puglisi, L Benatti, DF Falcone, Y Popoff, ...
Advanced Electronic Materials 8 (6), 2101395, 2022
39 2022 Reliability aspects of ferroelectric TiN/Hf0. 5Zr0. 5O2/Ge capacitors grown by plasma assisted atomic oxygen deposition C Zacharaki, P Tsipas, S Chaitoglou, L Bégon-Lours, M Halter, ...
Applied Physics Letters 117 (21), 2020
33 2020 Metastable ferroelectricity driven by depolarization fields in ultrathin Hf0.5 Zr0.5 O2 N Siannas, C Zacharaki, P Tsipas, S Chaitoglou, L Bégon-Lours, C Istrate, ...
Communications Physics 5 (1), 178, 2022
24 2022 A non-linear model of sensitivity matrix for electrical capacitance tomography G Villares, L Begon-Lours, C Margo, Y Oussar, J Lucas, S Holé
2012 Annual Meeting of the Electrostatics Society of America, 00-00, 2012
19 2012 A multi-timescale synaptic weight based on ferroelectric hafnium zirconium oxide M Halter, L Bégon-Lours, M Sousa, Y Popoff, U Drechsler, V Bragaglia, ...
Communications Materials 4 (1), 14, 2023
17 2023 Ferroelectric, Analog Resistive Switching in Back‐End‐of‐Line Compatible TiN/HfZrO4 /TiOx L Bégon-Lours, M Halter, Y Popoff, BJ Offrein
physica status solidi (RRL)–Rapid Research Letters 15 (5), 2000524, 2021
16 2021 Effect of cycling on ultra-thin HfZrO4, ferroelectric synaptic weights L Bégon-Lours, M Halter, M Sousa, Y Popoff, DD Pineda, DF Falcone, ...
Neuromorphic Computing and Engineering 2 (2), 024001, 2022
15 2022 Analog resistive switching in BEOL, ferroelectric synaptic weights L Bégon-Lours, M Halter, Y Popoff, Z Yu, DF Falcone, D Davila, ...
IEEE Journal of the Electron Devices Society 9, 1275-1281, 2021
15 2021 High-temperature-superconducting weak link defined by the ferroelectric field effect L Bégon-Lours, V Rouco, A Sander, J Trastoy, R Bernard, E Jacquet, ...
Physical Review Applied 7 (6), 064015, 2017
12 2017 Back-end, CMOS-compatible ferroelectric FinFET for synaptic weights DF Falcone, M Halter, L Bégon-Lours, BJ Offrein
Frontiers in Electronic Materials 2, 849879, 2022
10 2022 A back-end-of-line compatible, ferroelectric analog non-volatile memory L Bégon-Lours, M Halter, DD Pineda, V Bragaglia, Y Popoff, A La Porta, ...
2021 IEEE International Memory Workshop (IMW), 1-4, 2021
9 2021 Factors limiting ferroelectric field-effect doping in complex oxide heterostructures L Bégon-Lours, V Rouco, Q Qiao, A Sander, MA Roldán, R Bernard, ...
Physical Review Materials 2 (8), 084405, 2018
8 2018 A BEOL compatible, 2-terminals, ferroelectric analog non-volatile memory L Bégon-Lours, M Halter, DD Pineda, Y Popoff, V Bragaglia, A La Porta, ...
2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2021
6 2021 ESSCIRC 2021–IEEE 47th Eur L Begon-Lours, M Halter, Y Popoff, Z Yu, DF Falcone, BJ Offrein
Solid State Circuits Conf. Proc, 87-90, 2021
6 2021 Scaling ferroelectric HZO thickness for low power Ge MFS-FTJ memories N Siannas, C Zacharaki, P Tsipas, S Chaitoglou, L Begon-Lours, ...
ESSDERC 2021-IEEE 51st European Solid-State Device Research Conference …, 2021
4 2021