Nonvolatile memory device and related programming method KT Park, MG Kang
US Patent 8,300,463, 2012
468 2012 Three-dimensional NAND flash architecture design based on single-crystalline stacked array Y Kim, JG Yun, SH Park, W Kim, JY Seo, M Kang, KC Ryoo, JH Oh, ...
IEEE Transactions on Electron Devices 59 (1), 35-45, 2011
346 2011 A zeroing cell-to-cell interference page architecture with temporary LSB storing and parallel MSB program scheme for MLC NAND flash memories KT Park, M Kang, D Kim, SW Hwang, BY Choi, YT Lee, C Kim, K Kim
IEEE Journal of Solid-State Circuits 43 (4), 919-928, 2008
217 2008 Floating body semiconductor memory device and method of operating the same D Kim, D Park, K Myoung-Gon
US Patent 7,539,041, 2009
94 2009 A simple parameter extraction method of spiral on-chip inductors M Kang, J Gil, H Shin
IEEE Transactions on Electron Devices 52 (9), 1976-1981, 2005
82 2005 Multi-Level Analog Resistive Switching Characteristics in Tri-Layer HfO2 /Al2 O3 /HfO2 Based Memristor on ITO Electrode C Mahata, M Kang, S Kim
Nanomaterials 10 (10), 2069, 2020
72 2020 Prediction of process variation effect for ultrascaled GAA vertical FET devices using a machine learning approach K Ko, JK Lee, M Kang, J Jeon, H Shin
IEEE Transactions on Electron Devices 66 (10), 4474-4477, 2019
62 2019 Natural local self-boosting effect in 3D NAND flash memory M Kang, Y Kim
IEEE Electron Device Letters 38 (9), 1236-1239, 2017
59 2017 Down-coupling phenomenon of floating channel in 3D NAND flash memory Y Kim, M Kang
IEEE Electron Device Letters 37 (12), 1566-1569, 2016
55 2016 Activation Energies K Lee, M Kang, S Seo, D Kang, S Kim, DH Li, H Shin
IEEE transactions on electron devices 60 (3), 1099-1107, 2013
52 2013 Analysis of Failure Mechanisms and Extraction of Activation Energies K Lee, M Kang, S Seo, DH Li, J Kim, H Shin
IEEE Electron Device Letters 34 (1), 48-50, 2012
51 2012 A 45nm 4Gb 3-dimensional double-stacked multi-level NAND flash memory with shared bitline structure KT Park, D Kim, S Hwang, M Kang, H Cho, Y Jeong, YI Seo, J Jang, ...
2008 IEEE International Solid-State Circuits Conference-Digest of Technical …, 2008
45 2008 The compact modeling of channel potential in sub-30-nm NAND flash cell string M Kang, K Lee, DH Chae, BG Park, H Shin
IEEE electron device letters 33 (3), 321-323, 2012
39 2012 Mimicking biological synapses with a-HfSiOx -based memristor: implications for artificial intelligence and memory applications M Ismail, M Rasheed, C Mahata, M Kang, S Kim
Nano Convergence 10 (1), 33, 2023
38 2023 Three-dimensional NAND flash memory based on single-crystalline channel stacked array Y Kim, M Kang, SH Park, BG Park
IEEE electron device letters 34 (8), 990-992, 2013
37 2013 Flash memory devices with memory cells strings including dummy transistors with selective threshold voltages MG Kang, P Kitae
US Patent 8,089,811, 2012
37 2012 Accurate lifetime estimation of sub-20-nm NAND flash memory K Lee, M Kang, Y Hwang, H Shin
IEEE Transactions on Electron Devices 63 (2), 659-667, 2016
35 2016 Modeling of charge loss mechanisms during the short term retention operation in 3-D NAND flash memories C Woo, M Lee, S Kim, J Park, GB Choi, M Seo, KH Noh, M Kang, H Shin
2019 Symposium on VLSI Technology, T214-T215, 2019
34 2019 Analysis on self-heating effects in three-stacked nanoplate FET H Kim, D Son, I Myeong, M Kang, J Jeon, H Shin
IEEE Transactions on Electron Devices 65 (10), 4520-4526, 2018
34 2018 An accurate compact model considering direct-channel interference of adjacent cells in sub-30-nm NAND flash technologies M Kang, IH Park, IJ Chang, K Lee, S Seo, BG Park, H Shin
IEEE electron device letters 33 (8), 1114-1116, 2012
33 2012 