Toward ultimate efficiency: progress and prospects on planar and 3D nanostructured nonpolar and semipolar InGaN light-emitting diodes Y Zhao, H Fu, GT Wang, S Nakamura
Advances in Optics and Photonics 10 (1), 246-308, 2018
151 2018 MOCVD growth of high purity Ga2O3 epitaxial films using trimethylgallium precursor G Seryogin, F Alema, N Valente, H Fu, E Steinbrunner, AT Neal, S Mou, ...
Applied Physics Letters 117 (26), 2020
135 2020 A Comparative Study on the Electrical Properties of Vertical (2 O3 Schottky Barrier Diodes on EFG Single-Crystal Substrates H Fu, H Chen, X Huang, I Baranowski, J Montes, TH Yang, Y Zhao
IEEE Transactions on Electron Devices 65 (8), 3507-3513, 2018
112 2018 Demonstration of AlN Schottky barrier diodes with blocking voltage over 1 kV H Fu, I Baranowski, X Huang, H Chen, Z Lu, J Montes, X Zhang, Y Zhao
IEEE Electron Device Letters 38 (9), 1286-1289, 2017
97 2017 Ultra-low turn-on voltage and on-resistance vertical GaN-on-GaN Schottky power diodes with high mobility double drift layers H Fu, X Huang, H Chen, Z Lu, I Baranowski, Y Zhao
Applied Physics Letters 111 (15), 2017
95 2017 Demonstration of mechanically exfoliated β-Ga2O3/GaN pn heterojunction J Montes, C Yang, H Fu, TH Yang, K Fu, H Chen, J Zhou, X Huang, ...
Applied Physics Letters 114 (16), 2019
72 2019 Investigation of GaN-on-GaN vertical pn diode with regrown p-GaN by metalorganic chemical vapor deposition K Fu, H Fu, H Liu, SR Alugubelli, TH Yang, X Huang, H Chen, ...
Applied physics letters 113 (23), 2018
69 2018 Reverse leakage analysis for as-grown and regrown vertical GaN-on-GaN Schottky barrier diodes K Fu, H Fu, X Huang, TH Yang, CY Cheng, PR Peri, H Chen, J Montes, ...
IEEE Journal of the Electron Devices Society 8, 74-83, 2020
67 2020 High voltage vertical GaN pn diodes with hydrogen-plasma based guard rings H Fu, K Fu, SR Alugubelli, CY Cheng, X Huang, H Chen, TH Yang, ...
IEEE Electron Device Letters 41 (1), 127-130, 2019
67 2019 High performance vertical GaN-on-GaN pn power diodes with hydrogen-plasma-based edge termination H Fu, K Fu, X Huang, H Chen, I Baranowski, TH Yang, J Montes, Y Zhao
IEEE Electron Device Letters 39 (7), 1018-1021, 2018
66 2018 Demonstration of 1.27 kV Etch-Then-Regrow GaN K Fu, H Fu, X Huang, H Chen, TH Yang, J Montes, C Yang, J Zhou, ...
IEEE Electron Device Letters 40 (11), 1728-1731, 2019
64 2019 Low loss GaN waveguides at the visible spectral wavelengths for integrated photonics applications H Chen, H Fu, X Huang, X Zhang, TH Yang, JA Montes, I Baranowski, ...
Optics express 25 (25), 31758-31773, 2017
64 2017 Effect of buffer layer design on vertical GaN-on-GaN pn and Schottky power diodes H Fu, X Huang, H Chen, Z Lu, X Zhang, Y Zhao
IEEE Electron Device Letters 38 (6), 763-766, 2017
64 2017 Vertical GaN power devices: Device principles and fabrication technologies—Part I H Fu, K Fu, S Chowdhury, T Palacios, Y Zhao
IEEE Transactions on Electron Devices 68 (7), 3200-3211, 2021
63 2021 Vertical GaN power devices: Device principles and fabrication technologies—Part II H Fu, K Fu, S Chowdhury, T Palacios, Y Zhao
IEEE Transactions on Electron Devices 68 (7), 3212-3222, 2021
60 2021 Temperature-dependent electrical properties of β-Ga2O3 Schottky barrier diodes on highly doped single-crystal substrates TH Yang, H Fu, H Chen, X Huang, J Montes, I Baranowski, K Fu, Y Zhao
Journal of Semiconductors 40 (1), 012801, 2019
54 2019 Active tracking system for visible light communication using a GaN-based micro-LED and NRZ-OOK Z Lu, P Tian, H Chen, I Baranowski, H Fu, X Huang, J Montes, Y Fan, ...
Optics express 25 (15), 17971-17981, 2017
53 2017 High-Photoresponsivity Self-Powered a -, ε-, and β-Ga2 O3 /p-GaN Heterojunction UV Photodetectors with an In Situ GaON Layer by MOCVD Y Ma, T Chen, X Zhang, W Tang, B Feng, Y Hu, L Zhang, X Zhou, X Wei, ...
ACS applied materials & interfaces 14 (30), 35194-35204, 2022
52 2022 Nonpolar and semipolar InGaN/GaN multiple-quantum-well solar cells with improved carrier collection efficiency X Huang, H Fu, H Chen, X Zhang, Z Lu, J Montes, M Iza, SP DenBaars, ...
Applied Physics Letters 110 (16), 2017
50 2017 Analysis of low efficiency droop of semipolar InGaN quantum well light-emitting diodes by modified rate equation with weak phase-space filling effect H Fu, Z Lu, Y Zhao
AIP Advances 6 (6), 2016
47 2016 
Yuji ZhaoProfessor, Electrical and Computer Engineering, Rice UniversityПідтверджена електронна адреса в rice.edu
