High‐Q plasmonic resonances: fundamentals and applications B Wang, P Yu, W Wang, X Zhang, HC Kuo, H Xu, ZM Wang Advanced Optical Materials 9 (7), 2001520, 2021 | 178 | 2021 |
Visible light-assisted high-performance mid-infrared photodetectors based on single InAs nanowire H Fang, W Hu, P Wang, N Guo, W Luo, D Zheng, F Gong, M Luo, H Tian, ... Nano letters 16 (10), 6416-6424, 2016 | 160 | 2016 |
Selective area epitaxy of III–V nanostructure arrays and networks: Growth, applications, and future directions X Yuan, D Pan, Y Zhou, X Zhang, K Peng, B Zhao, M Deng, J He, HH Tan, ... Applied Physics Reviews 8 (2), 2021 | 113 | 2021 |
Ultrasensitive mid-wavelength infrared photodetection based on a single InAs nanowire X Zhang, H Huang, X Yao, Z Li, C Zhou, X Zhang, P Chen, L Fu, X Zhou, ... ACS nano 13 (3), 3492-3499, 2019 | 64 | 2019 |
Self-assembly growth of In-rich InGaAs core–shell structured nanowires with remarkable near-infrared photoresponsivity C Zhou, XT Zhang, K Zheng, PP Chen, W Lu, J Zou Nano Letters 17 (12), 7824-7830, 2017 | 45 | 2017 |
Au–InSe van der Waals Schottky junctions with ultralow reverse current and high photosensitivity S Hu, Q Zhang, X Luo, X Zhang, T Wang, Y Cheng, W Jie, J Zhao, T Mei, ... Nanoscale 12 (6), 4094-4100, 2020 | 42 | 2020 |
A new strategy for selective area growth of highly uniform InGaAs/InP multiple quantum well nanowire arrays for optoelectronic device applications F Zhang, X Zhang, Z Li, R Yi, Z Li, N Wang, X Xu, Z Azimi, L Li, ... Advanced Functional Materials 32 (3), 2103057, 2022 | 41 | 2022 |
Gate‐Switchable Photovoltaic Effect in BP/MoTe2 van der Waals Heterojunctions for Self‐Driven Logic Optoelectronics S Hu, J Xu, Q Zhao, X Luo, X Zhang, T Wang, W Jie, Y Cheng, R Frisenda, ... Advanced Optical Materials 9 (5), 2001802, 2021 | 40 | 2021 |
Ultralow threshold, single-mode InGaAs/GaAs multiquantum disk nanowire lasers X Zhang, R Yi, N Gagrani, Z Li, F Zhang, X Gan, X Yao, X Yuan, N Wang, ... ACS nano 15 (5), 9126-9133, 2021 | 31 | 2021 |
MoTe2 PN Homojunction Constructed on a Silicon Photonic Crystal Cavity for High-Performance Photodetector C Li, R Tian, R Yi, S Hu, Y Chen, Q Yuan, X Zhang, Y Liu, Y Hao, X Gan, ... ACS Photonics 8 (8), 2431-2439, 2021 | 30 | 2021 |
Surface-states-modulated high-performance InAs nanowire phototransistor X Zhang, X Yao, Z Li, C Zhou, X Yuan, Z Tang, W Hu, X Gan, J Zou, ... The Journal of Physical Chemistry Letters 11 (15), 6413-6419, 2020 | 30 | 2020 |
Self-frequency-conversion nanowire lasers R Yi, X Zhang, C Li, B Zhao, J Wang, Z Li, X Gan, L Li, Z Li, F Zhang, ... Light: Science & Applications 11 (1), 120, 2022 | 28 | 2022 |
Thickness-controlled three-dimensional Dirac semimetal for scalable high-performance terahertz optoelectronics X Yao, S Zhang, Q Sun, P Chen, X Zhang, L Zhang, J Zhang, Y Wu, J Zou, ... ACS Photonics 8 (6), 1689-1697, 2021 | 23 | 2021 |
Light-induced positive and negative photoconductances of InAs nanowires toward rewritable nonvolatile memory X Zhang, Z Li, X Yao, H Huang, D Wei, C Zhou, Z Tang, X Yuan, P Chen, ... ACS Applied Electronic Materials 1 (9), 1825-1831, 2019 | 20 | 2019 |
Integrating a nanowire laser in an on-chip photonic waveguide R Yi, X Zhang, F Zhang, L Gu, Q Zhang, L Fang, J Zhao, L Fu, HH Tan, ... Nano Letters 22 (24), 9920-9927, 2022 | 18 | 2022 |
Epitaxial GaAs/AlGaAs core–multishell nanowires with enhanced photoluminescence lifetime C Zhou, XT Zhang, K Zheng, PP Chen, S Matsumura, W Lu, J Zou Nanoscale 11 (14), 6859-6865, 2019 | 17 | 2019 |
High-quality epitaxial wurtzite structured InAs nanosheets grown in MBE Q Sun, H Gao, X Zhang, X Yao, S Xu, K Zheng, P Chen, W Lu, J Zou Nanoscale 12 (1), 271-276, 2020 | 13 | 2020 |
Vertical emitting nanowire vector beam lasers X Zhang, R Yi, B Zhao, C Li, L Li, Z Li, F Zhang, N Wang, M Zhang, L Fang, ... ACS nano 17 (11), 10918-10924, 2023 | 11 | 2023 |
Broadband refractory plasmonic absorber without refractory metals for solar energy conversion B Wang, W Wang, E Ashalley, X Zhang, P Yu, H Xu, ZM Wang Journal of Physics D: Applied Physics 54 (9), 094001, 2020 | 11 | 2020 |
Anomalous photoelectrical properties through strain engineering based on a single bent InAsSb nanowire X Yao, X Zhang, Q Sun, D Wei, P Chen, J Zou ACS Applied Materials & Interfaces 13 (4), 5691-5698, 2021 | 10 | 2021 |