Structural, electrical, and Rashba properties of monolayer Janus S Babaee Touski, N Ghobadi
Physical Review B 103 (16), 165404, 2021
43 2021 Electronic, spintronic, and piezoelectric properties of new Janus N Ghobadi, S Gholami Rudi, S Soleimani-Amiri
Physical Review B 107 (7), 075443, 2023
41 2023 A comparative study of tunneling FETs based on graphene and GNR heterostructures N Ghobadi, M Pourfath
IEEE Transactions on Electron Devices 61 (1), 186-192, 2013
39 2013 Field-Effect Transistor Based on MoSi2 N4 and WSi2 N4 Monolayers Under Biaxial Strain: A Computational Study of the Electronic Properties N Ghobadi, M Hosseini, SB Touski
IEEE Transactions on Electron Devices 69 (2), 863-869, 2022
29 2022 A comparative study of the mechanical properties of multilayer MoS2 and graphene/MoS2 heterostructure: effects of temperature, number of layers and stacking order N Ghobadi
Current Applied Physics 17 (11), 1483-1493, 2017
29 2017 First-principle study on quintuple-atomic-layer Janus MTeSiX2 (M= Mo, W; X= N, P, As) monolayers with intrinsic Rashba spin-splitting and Mexican hat dispersion A Rezavand, N Ghobadi
Materials Science in Semiconductor Processing 152, 107061, 2022
28 2022 Vertical strain-induced modification of the electrical and spin properties of monolayer mosi2 x 4 (x= n, p, as and sb) SB Touski, N Ghobadi
Journal of Physics D: Applied Physics 54 (48), 485302, 2021
24 2021 Electronic and spintronic properties of Janus A Rezavand, N Ghobadi, B Behnamghader
Physical Review B 106 (3), 035417, 2022
23 2022 Tuning the Rashba spin splitting in Janus MoSeTe and WSeTe van der Waals heterostructures by vertical strain A Rezavand, N Ghobadi
Journal of Magnetism and Magnetic Materials 544, 168721, 2022
22 2022 Normal compressive strain-induced modulation of electronic and mechanical properties of multilayer MoS2 and Graphene/MoS2 heterostructure: A first-principles study N Ghobadi
Physica E: Low-dimensional Systems and Nanostructures 111, 158-166, 2019
21 2019 The electrical and spin properties of monolayer and bilayer Janus HfSSe under vertical electrical field N Ghobadi, SB Touski
Journal of Physics: Condensed Matter 33 (8), 085502, 2020
19 2020 Stacking-dependent Rashba spin-splitting in Janus bilayer transition metal dichalcogenides: The role of in-plane strain and out-of-plane electric field A Rezavand, N Ghobadi
Physica E: Low-dimensional Systems and Nanostructures 132, 114768, 2021
18 2021 Interplay between stacking order and in-plane strain on the electrical properties of bilayer antimonene SB Touski, N Ghobadi
Physica E: Low-dimensional Systems and Nanostructures 126, 114407, 2021
18 2021 Band structure and Schottky barrier modulation in multilayer black phosphorene and black phosphorene/graphene heterostructure through out-of-plane strain M Shamekhi, N Ghobadi
Physica B: Condensed Matter 580, 411923, 2020
16 2020 Enhanced performance of Janus XMSiY2 (X= S, Se; M= Mo, W; and Y= N, P) monolayers for photocatalytic water splitting via strain engineering SG Rudi, S Soleimani-Amiri, A Rezavand, N Ghobadi
Journal of Physics and Chemistry of Solids 181, 111561, 2023
15 2023 First-principles prediction of two-dimensional Janus XMInZ2 (X= Cl, Br, I; M= Mg, Ca; and Z= S, Se, and Te) with promising spintronic and photocatalytic properties S Soleimani-Amiri, N Ghobadi, A Rezavand, SG Rudi
Applied Surface Science 623, 157020, 2023
13 2023 Vertical tunneling graphene heterostructure-based transistor for pressure sensing N Ghobadi, M Pourfath
IEEE Electron Device Letters 36 (3), 280-282, 2015
12 2015 Structural, electrical and optical properties of bilayer SiX (X= N, P, As and Sb) N Ghobadi, SB Touski
Journal of Physics: Condensed Matter 33 (28), 285502, 2021
11 2021 Low power 4-bit full adder cells in subthreshold regime N Ghobadi, M Mehran, A Afzali-Kusha
2010 18th Iranian Conference on Electrical Engineering, 362-367, 2010
9 2010 Surface-functionalization induced spintronic and photocatalytic features in group-III monochalcogenide monolayers: A first-principles study N Ghobadi, A Rezavand, S Soleimani-Amiri, SG Rudi
Applied Surface Science 639, 158278, 2023
7 2023 
Somayeh Gholami RudiAssistant professor, Department of electrical engineering, Qaemshahr Branch, Islamic Azad UniversityПідтверджена електронна адреса в qaemiau.ac.ir
