InP/GaAsSb Double Heterojunction Bipolar Transistor Emitter-Fin Technology With f MAX = 1.2 THz AM Arabhavi, F Ciabattini, S Hamzeloui, R Flückiger, T Saranovac, D Han, ...
IEEE Transactions on Electron Devices 69 (4), 2122-2129, 2022
46 2022 Scalable compact modeling of III–V DHBTs: Prospective figures of merit toward terahertz operation C Mukherjee, C Raya, B Ardouin, M Deng, S Fregonese, T Zimmer, ...
IEEE Transactions on Electron Devices 65 (12), 5357-5364, 2018
24 2018 Quaternary Graded-Base InP/GaInAsSb DHBTs With W Quan, AM Arabhavi, R Flückiger, O Ostinelli, CR Bolognesi
IEEE Electron Device Letters 39 (8), 1141-1144, 2018
24 2018 Scaling of InP/GaAsSb DHBTs: A Simultaneous AM Arabhavi, W Quan, O Ostinelli, CR Bolognesi
2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and …, 2018
19 2018 Type-II GaInAsSb/InP Uniform Absorber High Speed Uni-Traveling Carrier Photodiodes AM Arabhavi, R Chaudhary, R Flückiger, D Marti, S Hamzeloui, ...
Journal of Lightwave Technology 39 (7), 2171-2176, 2021
17 2021 InAs Channel Inset Effects on the DC, RF, and Noise Properties of InP pHEMTs DC Ruiz, T Saranovac, D Han, A Hambitzer, AM Arabhavi, O Ostinelli, ...
IEEE Transactions on Electron Devices 66 (11), 4685-4691, 2019
15 2019 A multiscale TCAD approach for the simulation of InP DHBTs and the extraction of their transit times X Wen, C Mukherjee, C Raya, B Ardouin, M Deng, S Fregonese, ...
IEEE Transactions on Electron Devices 66 (12), 5084-5090, 2019
13 2019 Design of On-Wafer TRL Calibration Kit for InP Technologies Characterization up to 500 GHz M Deng, C Mukherjee, C Yadav, S Fregonese, T Zimmer, M De Matos, ...
IEEE Transactions on Electron Devices 67 (12), 5441-5447, 2020
12 2020 High Power InP/Ga(In)AsSb DHBTs for Millimeter-Wave PAs: 14.5 dBm Output Power and 10.4 mw/μm2 Power Density at 94 GHz S Hamzeloui, AM Arabhavi, F Ciabattini, R Flückiger, D Marti, M Ebrahimi, ...
IEEE Journal of Microwaves 2 (4), 660-668, 2022
11 2022 InP/GaAsSb DHBT Power Performance with 30% Class-A PAE at 94 GHz W Quan, AM Arabhavi, D Marti, S Hamzeloui, O Ostinelli, CR Bolognesi
2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and …, 2019
10 2019 InP/GaAsSb DHBTs: THz Analog Performance and Record 180-Gb/s 5.5Vppd -Swing PAM-4 DAC-Driver CR Bolognesi, AM Arabhavi, R Hersent, S Hamzeloui, F Jorge, X Wen, ...
2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and …, 2022
9 2022 Performance prediction of InP/GaAsSb double heterojunction bipolar transistors for THz applications X Wen, A Arabhavi, W Quan, O Ostinelli, C Mukherjee, M Deng, ...
Journal of Applied Physics 130 (3), 2021
9 2021 Effects of electrochemical etching on InP HEMT fabrication T Saranovac, DC Ruiz, D Han, AM Arabhavi, O Ostinelli, CR Bolognesi
IEEE Transactions on Semiconductor Manufacturing 32 (4), 496-501, 2019
8 2019 Advances in InP/Ga (In) AsSb double heterojunction bipolar transistors (DHBTs) CR Bolognesi, W Quan, AM Arabhavi, T Saranovac, R Flückiger, ...
Japanese Journal of Applied Physics 58 (SB), SB0802, 2019
8 2019 Multi-Finger 250-nm InP/GaAsSb DHBTs with Record 37.3% Class-A PAE at 94 GHz S Hamzeloui, AM Arabhavi, F Ciabattini, M Ebrahimi, M Müller, O Ostinelli, ...
2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and …, 2023
6 2023 High-Speed Steep-Slope GaInAs Impact Ionization MOSFETs (I-MOS) With SS= 1.25 mV/dec—Part I: Material and Device Characterization, DC Performance, and Simulation D Han, G Bonomo, DC Ruiz, AM Arabhavi, OJS Ostinelli, CR Bolognesi
IEEE Transactions on Electron Devices 69 (7), 3542-3548, 2022
6 2022 III-V GaAs and INP HBT devices for 4G & 5G wireless applications CR Bolognesi, W Quan, AM Arabhavi, D Marti, O Ostinelli
2018 China Semiconductor Technology International Conference (CSTIC), 1-4, 2018
6 2018 Thermal Characterization of InP/GaAsSb DHBTs: Effect of Emitter and Collector Layers F Ciabattini, AM Arabhavi, S Hamzeloui, M Ebrahimi, O Ostinelli, ...
2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and …, 2023
5 2023 InP/GaAsSb Double Heterojunction Bipolar Transistor Technology with fMAX = 1.2 THz AM Arabhavi, F Ciabattini, S Hamzeloui, R Flückiger, T Popovic, D Han, ...
2021 IEEE International Electron Devices Meeting (IEDM), 11.4. 1-11.4. 4, 2021
5 2021 THz InP/GaAsSb DHBTs with Record fAVG = 800 GHz: Characterization to 330 GHz AM Arabhavi, M Deng, F Ciabattini, S Hamzeloui, T Saranovac, ...
2023 International Electron Devices Meeting (IEDM), 1-4, 2023
4 2023 