| Recent Advances in GaN‐Based Power HEMT Devices J He, WC Cheng, Q Wang, K Cheng, H Yu, Y Chai Advanced Electronic Materials 7 (4), 2001045, 2021 | 162 | 2021 |
| Oxygen-based digital etching of AlGaN/GaN structures with AlN as etch-stop layers J Wu, S Lei, WC Cheng, R Sokolovskij, Q Wang, GM Xia, H Yu Journal of Vacuum Science & Technology A 37 (6), 2019 | 23 | 2019 |
| Reducing dynamic on-resistance of p-GaN gate HEMTs using dual field plate configurations Q Hu, F Zeng, WC Cheng, G Zhou, Q Wang, H Yu 2020 IEEE International Symposium on the Physical and Failure Analysis of …, 2020 | 17 | 2020 |
| Silicon Nitride Stress Liner Impacts on the Electrical Characteristics of AlGaN/GaN HEMTs WC Cheng, T Fang, S Lei, Y Zhao, M He, M Chan, G Xia, F Zhao, H Yu 2019 IEEE International Conference on Electron Devices and Solid-State …, 2019 | 16 | 2019 |
| Increasing threshold voltage and reducing leakage of AlGaN/GaN HEMTs using dual-layer SiN x stressors WC Cheng, M He, S Lei, L Wang, J Wu, F Zeng, Q Hu, Q Wang, F Zhao, ... Semiconductor Science and Technology 35 (4), 045010, 2020 | 15 | 2020 |
| Improving the drive current of AlGaN/GaN HEMT using external strain engineering WC Cheng, S Lei, W Li, F Zhao, M Chan, H Yu 2019 Electron Devices Technology and Manufacturing Conference (EDTM), 374-376, 2019 | 12 | 2019 |
| Study on the Optimization of Off-State Breakdown Performance of p-GaN HEMTs F Zeng, Q Wang, S Lin, L Wang, G Zhou, WC Cheng, M He, Y Jiang, Q Ge, ... 2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-4, 2020 | 11 | 2020 |
| Beta-Ga2O3 MOSFET Device Optimization via TCAD M He, F Zeng, WC Cheng, Q Wang, H Yu, KW Ang 2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-4, 2020 | 10 | 2020 |
| Atomic layer etching technique for InAlN/GaN heterostructure with AlN etch-stop layer F Du, Y Jiang, Z Qiao, Z Wu, C Tang, J He, G Zhou, WC Cheng, X Tang, ... Materials Science in Semiconductor Processing 143, 106544, 2022 | 9 | 2022 |
| Distinguishing various influences on the electrical properties of thin-barrier AlGaN/GaN heterojunctions with in-situ SiNx caps J He, WC Cheng, Y Jiang, M Fan, G Zhou, G Yang, L Jiang, X Wang, Z Wu, ... Materials Science in Semiconductor Processing 132, 105907, 2021 | 9 | 2021 |
| Quasi-Normally-Off AlGaN/GaN HEMTs With SiNₓ Stress Liner and Comb Gate for Power Electronics Applications WC Cheng, F Zeng, M He, Q Wang, M Chan, H Yu IEEE Journal of the Electron Devices Society 8, 1138-1144, 2020 | 9 | 2020 |
| Simulation of High Breakdown Voltage, Improved Current Collapse Suppression, and Enhanced Frequency Response AlGaN/GaN HEMT Using A Double Floating Field Plate P Wang, C Deng, H Cheng, W Cheng, F Du, C Tang, C Geng, N Tao, ... Crystals 13 (1), 110, 2023 | 8 | 2023 |
| Low trap density of oxygen-rich HfO2/GaN interface for GaN MIS-HEMT applications WC Cheng, J He, M He, Z Qiao, Y Jiang, F Du, X Wang, H Hong, Q Wang, ... Journal of Vacuum Science & Technology B 40 (2), 2022 | 7 | 2022 |
| Improvement of β-Ga2O3 MIS-SBD Interface Using Al-Reacted Interfacial Layer M He, WC Cheng, F Zeng, Z Qiao, YC Chien, Y Jiang, W Li, L Jiang, ... IEEE Transactions on Electron Devices 68 (7), 3314-3319, 2021 | 6 | 2021 |
| Low leakage GaN HEMTs with sub-100 nm T-shape gates fabricated by a low-damage etching process S Lei, WC Cheng, J Wu, L Wang, Q Wang, G Xia, F Zhao, H Yu Journal of Materials Science: Materials in Electronics 31 (8), 5886-5891, 2020 | 6 | 2020 |
| Developing Physics-Based TCAD Model for AlGaN/GaN Power HEMTs WC Cheng, PH Lin, CH Lin, YW Lien, CY Chen, CH Lee, SC Shen, ... 2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia …, 2023 | 4 | 2023 |
| Current collapse suppression in AlGaN/GaN HEMTs using dual-layer SiNx stressor passivation C Deng, WC Cheng, XG Chen, KY Wen, MH He, CY Tang, P Wang, ... Applied Physics Letters 122 (23), 2023 | 4 | 2023 |
| Quasi-normally off AlGaN/GaN high-electron-mobility transistors with p-type CuOx gate synthesized through magnetron reactive sputtering H Lu, K Wen, F Du, C Tang, WC Cheng, B Wei, H Li, Q Wang, H Yu Materials Science in Semiconductor Processing 154, 107221, 2023 | 3 | 2023 |
| Study of bilayer Al2O3/in-situ SiNx dielectric stacks for gate modulation in ultrathin-barrier AlGaN/GaN MIS-HEMTs J He, WC Cheng, Y Jiang, Q Wang, H Yu 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2021 | 3 | 2021 |
| Oxygen-plasma-based digital etching for GaN/AlGaN high electron mobility transistors J Wu, Y Jiang, Z Wan, S Lei, WC Cheng, G Zhou, R Sokolovskij, Q Wang, ... 2019 IEEE 13th International Conference on ASIC (ASICON), 1-4, 2019 | 3 | 2019 |
