Influence of average size and interface passivation on the spectral emission of Si nanocrystals embedded in B Garrido Fernández, M Lopez, C Garcıa, A Pérez-Rodrıguez, JR Morante, ...
Journal of Applied Physics 91 (2), 798-807, 2002
397 2002 Ostwald ripening of end-of-range defects in silicon C Bonafos, D Mathiot, A Claverie
Journal of Applied Physics 83 (6), 3008-3017, 1998
226 1998 Extended defects in shallow implants A Claverie, B Colombeau, B De Mauduit, C Bonafos, X Hebras, ...
Applied Physics A 76, 1025-1033, 2003
194 2003 Elucidation of the surface passivation role on the photoluminescence emission yield of silicon nanocrystals embedded in M López, B Garrido, C Garcıa, P Pellegrino, A Pérez-Rodrıguez, ...
Applied Physics Letters 80 (9), 1637-1639, 2002
168 2002 Manipulation of two-dimensional arrays of Si nanocrystals embedded in thin C Bonafos, M Carrada, N Cherkashin, H Coffin, D Chassaing, ...
Journal of applied physics 95 (10), 5696-5702, 2004
147 2004 Effect of annealing environment on the memory properties of thin oxides with embedded Si nanocrystals obtained by low-energy ion-beam synthesis P Normand, E Kapetanakis, P Dimitrakis, D Tsoukalas, K Beltsios, ...
Applied Physics Letters 83 (1), 168-170, 2003
143 2003 Stress measurements of germanium nanocrystals embedded in silicon oxide A Wellner, V Paillard, C Bonafos, H Coffin, A Claverie, B Schmidt, ...
Journal of Applied Physics 94 (9), 5639-5642, 2003
139 2003 Correlation between structural and optical properties of Si nanocrystals embedded in B Garrido, M Lopez, O Gonzalez, A Pérez-Rodrıguez, JR Morante, ...
Applied Physics Letters 77 (20), 3143-3145, 2000
135 2000 White luminescence from A Pérez-Rodrıguez, O González-Varona, B Garrido, P Pellegrino, ...
Journal of Applied Physics 94 (1), 254-262, 2003
111 2003 Silicon nanocrystal memory devices obtained by ultra-low-energy ion-beam synthesis P Dimitrakis, E Kapetanakis, D Tsoukalas, D Skarlatos, C Bonafos, ...
Solid-State Electronics 48 (9), 1511-1517, 2004
110 2004 Imaging Si nanoparticles embedded in SiO2 layers by (S) TEM-EELS S Schamm, C Bonafos, H Coffin, N Cherkashin, M Carrada, GB Assayag, ...
Ultramicroscopy 108 (4), 346-357, 2008
105 2008 Kinetic study of group IV nanoparticles ion beam synthesized in SiO2 C Bonafos, B Colombeau, A Altibelli, M Carrada, GB Assayag, B Garrido, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2001
104 2001 Phosphorus doping of ultra-small silicon nanocrystals M Perego, C Bonafos, M Fanciulli
Nanotechnology 21 (2), 025602, 2009
95 2009 Optical properties of silicon nanocrystal LEDs J De La Torre, A Souifi, A Poncet, C Busseret, M Lemiti, G Bremond, ...
Physica E: Low-dimensional Systems and Nanostructures 16 (3-4), 326-330, 2003
95 2003 Optical and electrical properties of Si-nanocrystals ion beam synthesized in SiO2 B Garrido, M López, A Pérez-Rodrıguez, C Garcıa, P Pellegrino, R Ferré, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2004
91 2004 Thermal evolution of extended defects in implanted Si:: impact on dopant diffusion A Claverie, B Colombeau, GB Assayag, C Bonafos, F Cristiano, M Omri, ...
Materials Science in Semiconductor Processing 3 (4), 269-277, 2000
85 2000 Transient enhanced diffusion of boron in presence of end-of-range defects C Bonafos, M Omri, B De Mauduit, G BenAssayag, A Claverie, D Alquier, ...
Journal of applied physics 82 (6), 2855-2861, 1997
73 1997 Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications P Normand, E Kapetanakis, P Dimitrakis, D Skarlatos, K Beltsios, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2004
69 2004 On the relation between dopant anomalous diffusion in Si and end-of-range defects A Claverie, L Laânab, C Bonafos, C Bergaud, A Martinez, D Mathiot
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1995
69 1995 Oxidation of Si nanocrystals fabricated by ultralow-energy ion implantation in thin SiO2 layers H Coffin, C Bonafos, S Schamm, N Cherkashin, GB Assayag, A Claverie, ...
Journal of applied physics 99 (4), 2006
67 2006