15 kV-Class Implantation-Free 4H-SiC BJTs with Record High Current Gain A Salemi, H Elahipanah, K Jacobs, CM Zetterling, M Östling
IEEE Electron Device Letters 39 (1), 63-66, 2018
58 2018 Temperature dependence of electrical characteristics of carbon nanotube field‐effect transistors: a quantum simulation study A Naderi, SM Noorbakhsh, H Elahipanah
Journal of Nanomaterials 2012 (1), 532625, 2012
43 2012 5.8-kV implantation-free 4H-SiC BJT with multiple-shallow-trench junction termination extension H Elahipanah, A Salemi, CM Zetterling, M Östling
IEEE Electron Device Letters 36 (2), 168-170, 2014
36 2014 A 1300-V 0.34- H Elahipanah, AA Orouji
IEEE transactions on electron devices 57 (8), 1959-1965, 2010
35 2010 500° C, High Current Linear Voltage Regulator in 4H-SiC BJT technology S Kargarrazi, H Elahipanah, S Rodriguez, CM Zetterling
IEEE Electron Device Letters 39 (4), 548-551, 2018
30 2018 Simulation and optimization of high breakdown double-recessed 4H-SiC MESFET with metal plate termination technique H Elahipanah
Superlattices and Microstructures 48 (6), 529-540, 2010
30 2010 500° C high current 4H-SiC lateral BJTs for high-temperature integrated circuits H Elahipanah, S Kargarrazi, A Salemi, M Östling, CM Zetterling
IEEE Electron Device Letters 38 (10), 1429-1432, 2017
29 2017 Conductivity modulated on-axis 4H-SiC 10+ kV PiN diodes A Salemi, H Elahipanah, B Buono, A Hallén, JU Hassan, P Bergman, ...
2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's …, 2015
28 2015 Area-and efficiency-optimized junction termination for a 5.6 kV SiC BJT process with low ON-resistance A Salemi, H Elahipanah, G Malm, CM Zetterling, M Östling
2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's …, 2015
28 2015 A wafer-scale Ni-salicide contact technology on n-type 4H-SiC H Elahipanah, A Asadollahi, M Ekström, A Salemi, CM Zetterling, ...
ECS Journal of Solid State Science and Technology 6 (4), P197, 2017
23 2017 Record gain at 3.1 GHz of 4H-SiC high power RF MESFET H Elahipanah
Microelectronics Journal 42 (2), 299-304, 2011
20 2011 500 S Kargarrazi, H Elahipanah, S Saggini, D Senesky, CM Zetterling
IEEE Transactions on Power Electronics 34 (3), 1997-2001, 2018
19 2018 A 500° C active down-conversion mixer in silicon carbide bipolar technology MW Hussain, H Elahipanah, JE Zumbro, S Schröder, S Rodriguez, ...
IEEE Electron Device Letters 39 (6), 855-858, 2018
17 2018 Optimal emitter cell geometry in high power 4H-SiC BJTs A Salemi, H Elahipanah, CM Zetterling, M Östling
IEEE Electron Device Letters 36 (10), 1069-1072, 2015
16 2015 Low temperature Ni-Al ohmic contacts to p-type 4H-SiC using semi-salicide processing M Ekström, SB Hou, H Elahipanah, A Salemi, M Östling, CM Zetterling
Materials Science Forum 924, 389-392, 2018
14 2018 High-temperature passive components for extreme environments J Colmenares, S Kargarrazi, H Elahipanah, HP Nee, CM Zetterling
2016 IEEE 4th workshop on wide bandgap power devices and applications (WiPDA …, 2016
13 2016 Conductivity modulated and implantation-free 4H-SiC ultra-high-voltage PiN diodes A Salemi, H Elahipanah, CM Zetterling, M Östling
Materials Science Forum 924, 568-572, 2018
12 2018 Area-optimized JTE for 4.5 kV non ion-implanted 4H-SiC BJT A Salemi, H Elahipanah, B Buono, CM Zetterling, M Östling
Materials Science Forum 740, 974-977, 2013
12 2013 A SiC BJT-based negative resistance oscillator for high-temperature applications MW Hussain, H Elahipanah, JE Zumbro, S Rodriguez, BG Malm, ...
IEEE Journal of the Electron Devices Society 7, 191-195, 2019
11 2019 A novel nanoscale 4H-SiC-on-insulator MOSFET using step doping channel AA Orouji, H Elahipanah
IEEE Transactions on Device and Materials Reliability 10 (1), 92-95, 2009
11 2009 
Carl-Mikael ZetterlingKTHПідтверджена електронна адреса в kth.se
